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| AO4625 Complementary Enhancement Mode Field Effect Transistor General Description The AO4625 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Product AO4625 is Pbfree (meets ROHS & Sony 259 specifications). AO4625L is a Green Product ordering option. AO4625 and AO4625L are electrically identical. Features n-channel p-channel VDS (V) = 30V -30V ID = 6.9A (VGS=10V) -5.4A (VGS = -10V) RDS(ON) RDS(ON) < 28m (VGS=10V) < 45m (VGS = -10V) < 42m (VGS=4.5V) < 75m (VGS = -4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 D1 SOIC-8 S1 n-channel p-channel Max p-channel -30 20 -5.4 -4.6 -20 2 1.44 -55 to 150 W C A Units V V Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 6.9 5.8 30 2 1.44 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 40 Units C/W C/W C/W 62.5 C/W 110 C/W 40 C/W Alpha & Omega Semiconductor, Ltd. AO4625 N-CHANNEL: Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=6.9A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125C 10 1 30 1.86 22.5 31.3 34.5 15.4 0.76 Min 30 0.004 1 5 100 3 28 38 42 1 3 820 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 680 102 77 3 13.84 6.74 1.82 3.2 4.6 4.1 20.6 5.2 16.5 7.8 4.5 17 8.1 VGS=10V, VDS=15V, ID=6.9A VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=6.9A, dI/dt=100A/s IF=6.9A, dI/dt=100A/s 20 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4625 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 12 15 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V ID(A) 20 10V 6V 5V 4.5V VDS=5V 4V 16 8 125C 25C 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 60 50 125C 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C VGS=4.5V Normalized On-Resistance 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 ID=6.9A VGS=10V VGS=4.5 VGS=10V Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=6.9A 1.0E+00 1.0E-01 IS Amps 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 25C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AO4625 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=6.9A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V VDS (Volts) Figure 8: Capacitance Characteristics 100 TJ(Max)=150C TA=25C ID (Amps) 10 RDS(ON) limited 1ms 10ms 0.1s 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1 100s 40 TJ(Max)=150C TA=25C 30 10s Power W 20 10 0 1E-04 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4625 P-CHANNEL: Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5.4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5.4A TJ=125C 6 -1 -20 -1.98 35 49 58 8.6 -0.78 Min -30 -1 -5 100 -3 45 64 75 -1 -2.8 900 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 700 120 75 10 14.7 7.6 2 3.8 8.3 5 29 14 23.5 13.4 15 19 10 VGS=-10V, VDS=-15V, ID=-5.4A VGS=-10V, VDS=-15V, RL=2.8, RGEN=3 IF=-5.4A, dI/dt=100A/s IF=-5.4A, dI/dt=100A/s 30 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4625 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 -ID (A) -6V -5V -4.5V -4V 8 6 4 2 0 0 1 2 3 4 5 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.6 VGS=-4.5V 1.4 VGS=-10V -VGS(Volts) Figure 2: Transfer Characteristics VDS=-5V 10 10 -3.5V -ID(A) 125 5 VGS=-3V -2.5V 25 0 80 RDS(ON) (m) VGS=-4.5V 60 VGS=-10V 1.2 40 1 ID=-5.4A 0.8 0 25 50 75 100 125 150 175 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 140 ID=-5.4A 120 100 80 60 40 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C -IS (A) Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AO4625 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=-15V ID=-5.4A Capacitance (pF) 1000 800 600 400 Cos 200 Crs 0 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics 8 -VGS (Volts) Cis 6 4 2 0 100 TJ(Max)=150C TA=25C 100s 1ms RDS(ON) limited 0.1s 1s 10s DC 10ms 10s Power (W) 40 TJ(Max)=150C TA=25C 30 10 -ID (Amps) 20 1 10 0.1 0.1 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.00001 PD Ton T 10 100 1000 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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