View APTC60HM70T3_647867.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTC60HM70T3
Full - Bridge
Super Junction MOSFET
VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 39A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
11 22 19 Q2 23 8 Q4 7 10
Power Module
13 14 Q1 Q3
18
Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
26
4 3 29 15 30 31 R1 32 16
27
* * * *
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTC60HM70T3 - Rev 0 September, 2004
Max ratings 600 39 29 120 20 70 250 20 1 1800
Unit V A
APTC60HM70T3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min 600 Tj = 25C Tj = 125C 2.1 0.5 25 250 70 3.9 100 Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V, ID = 250A
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Typ
Max
Unit V A m V nA
VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = 20 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 39A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 39A, R G = 5
Min
Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206
Max
Unit nF
nC
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ 39 29
Max
Unit A
VGS = 0V, IS = - 39A IS = - 39A VR = 350V diS/dt = 100A/s Tj = 25C Tj = 25C 580 23
1.2 6
V V/ns ns C
APTC60HM70T3 - Rev 0 September, 2004
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 39A di/dt 100A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
2-6
APTC60HM70T3
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.50 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
1
12
APT website - http://www.advancedpower.com
3-6
APTC60HM70T3 - Rev 0 September, 2004
17
28
APTC60HM70T3
Typical Performance Curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 6.5V 6V 5.5V 5V 40 0 0 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to V GS=10V @ 19.5A
Transfert Characteristics 140 I D, Drain Current (A) 120 100 80 60 40 20 0 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 TJ=125C TJ=25C TJ=-55C
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
160 120 80
VGS=15&10V
RDS(on) Drain to Source ON Resistance
1.1 1.05 1 0.95 0.9 0
DC Drain Current vs Case Temperature 45
VGS=10V
40 35 30 25 20 15 10 5 0 25 50 75 100 125 TC, Case Temperature (C) 150
VGS =20V
10
20
30
40
50
60
I D, Drain Current (A)
APT website - http://www.advancedpower.com
4-6
APTC60HM70T3 - Rev 0 September, 2004
APTC60HM70T3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 39A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100 10 1 0.1 1
limited by RDSon
100 s 1 ms DC line 10 ms
Single pulse TJ =150C 10 100 1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000
C, Capacitance (pF)
14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300
APTC60HM70T3 - Rev 0 September, 2004
10000
Ciss Coss
ID=39A TJ=25C
V DS=120V VDS=300V V DS =480V
1000 Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTC60HM70T3
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120 td(off)
VDS=400V RG=5 TJ=125C L=100H
Rise and Fall times vs Current
VDS=400V RG=5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5
Switching Energy (mJ)
VDS=400V RG=5 TJ=125C L=100H
tf
80 60 40 20 0 0
td(on)
tr
10
20
30
40
50
60
70
ID, Drain Current (A) Switching Energy vs Gate Resistance 5 4 3 2 1 0
V DS =400V ID=39A T J=125C L=100H
Switching Energy (mJ)
2 1.5
Eoff Eon
Eoff
1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70
Eon
0
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Operating Frequency vs Drain Current 140
Frequency (kHz) I DR, Reverse Drain Current (A)
160
Source to Drain Diode Forward Voltage 1000
120 100 80 60 40 20 0 5
V DS =400V D=50% RG =5 T J=125C T C=75C hard switching ZCS ZVS
100
TJ=150C
10
TJ =25C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
APTC60HM70T3 - Rev 0 September, 2004
10
15 20 25 30 ID, Drain Current (A)
35
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6

▲Up To Search▲

Price & Availability of APTC60HM70T3

	To Download APTC60HM70T3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .