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APTGT75DU120T
Dual common source Fast Trench + Field Stop IGBT(R) Power Module
C1 Q1 G1 C2
VCES = 1200V IC = 75A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
Q2 G2
E1
E2
NTC1
E
NTC2
Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
G2 E2
C2
C1
E
C2
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
150A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT75DU120T - Rev 0
May, 2005
Max ratings 1200 110 75 175 20 357
Unit V A V W
APTGT75DU120T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 75A Tj = 125C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 4.7
Min
Typ 5345 280 240 280 40 450 75 290 45 550 90 7 8
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
50% duty cycle
IF = 75A IF = 75A VR = 600V
di/dt =2000A/s
75 1.6 1.6 170 280 7 14
2.1
V ns C
May, 2005
APT website - http://www.advancedpower.com
2-5
APTGT75DU120T - Rev 0
APTGT75DU120T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.35 0.58 150 125 125 4.7 160
Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500 -40 -40 -40 1.5
V C N.m g
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT75DU120T - Rev 0
May, 2005
APTGT75DU120T
Typical Performance Curve
150 125
IC (A) Output Characteristics (VGE =15V) Output Characteristics 150 T J = 125C
T J=25C
125
T J=125C
VGE =17V
VGE=13V VGE =15V VGE=9V
100
IC (A)
100 75 50 25 0
75 50 25 0 0 1 2 V CE (V) 3 4
0
1
2 VCE (V)
3
4
Transfert Characteristics 150 125 100 IC (A) 75 50 25 0 5 6 7 8 9 10 11 12 V GE (V) Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32
Er VCE = 600V VGE =15V IC = 75A TJ = 125C Eon T J=125C TJ =25C TJ =125C
Energy losses vs Collector Current 16 14 12 E (mJ) 10 8 6 4 2 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150
Eoff VCE = 600V VGE = 15V RG = 4.7 TJ = 125C Eoff Eon Er
100
125
150
125 IC (A) 100 75 50 25 0 0 400 800 V CE (V) 1200 1600
VGE =15V TJ=125C RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 IGBT
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT75DU120T - Rev 0
May, 2005
APTGT75DU120T
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 20 40 60 IC (A) 80 100 120
Hard switching ZCS VCE =600V D=50% RG=4.7 T J=125C
Forward Characteristic of diode 150 125 100 IC (A) 75 50 25 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4
TJ =125C TJ =25C T J=125C T J=25C
T c=75C ZVS
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT75DU120T - Rev 0
APT reserves the right to change, without notice, the specifications and information contained herein
May, 2005

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