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APTM50H14FT3
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 500V RDSon = 140m max @ Tj = 25C ID = 26A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50H14FT3 - Rev 0 September, 2004
Max ratings 500 26 18 105 30 140 208 35 30 1300
Unit V A
APTM50H14FT3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A VGS = 0V,VDS = 500V VGS = 10V, ID = 13A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V Min 500 Typ Max 100 140 5 100 Unit V A m V nA
3
Dynamic Characteristics
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 26A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 26A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 26A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 26A, R G = 5 Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 26A IS = - 26A VR = 250V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min
Typ 3259 709 51 72 20 36 10 17 50 41 326 250 548 288
Max
Unit pF
nC
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Min
Typ 26 18
Max
Unit A
1.3 15 250 525 1.6 6
V V/ns ns C
APTM50H14FT3 - Rev 0 September, 2004
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 26A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
2-6
APTM50H14FT3
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.60 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
1
12
APT website - http://www.advancedpower.com
3-6
APTM50H14FT3 - Rev 0 September, 2004
17
28
APTM50H14FT3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 0.9 0.7 0.5
0 0.00001
Low Voltage Output Characteristics 100 I D, Drain Current (A) 80 60 40 20 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to V GS=10V @ 13A
Transfert Characteristics
80
I D, Drain Current (A) VGS=10&15V 8V 7.5V 7V 6.5V 6V 5.5V 25
70 60 50 40 30 20 10 0 0
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
TJ =25C TJ =125C TJ =-55C
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 30
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0
VGS=10V
20
VGS=20V
10
0 10 20 30 40 50 60 25 ID, Drain Current (A)
APTM50H14FT3 - Rev 0 September, 2004
50 75 100 125 TC, Case Temperature (C)
150
APT website - http://www.advancedpower.com
4-6
APTM50H14FT3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000 ID, Drain Current (A) ON resistance vs Temperature
VGS=10V ID=13A
1.1
1.0
0.9
0.8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2
VGS (TH), Threshold Voltage (Normalized)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage
100
limited by R DSonDSon limited by R
100s
10 Single pulse TJ =150C 1 1 1ms 10ms
10 100 1000 VDS, Drain to Source Voltage (V)
100000 VGS , Gate to Source Voltage (V) C, Capacitance (pF)
10000
Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=26A 12 T =25C J V =250V
DS
Ciss Coss
10 8 6 4 2 0 0 20 40 60 Gate Charge (nC) 80 100
APTM50H14FT3 - Rev 0 September, 2004
VDS=400V
1000
100
Crss
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
5-6
APTM50H14FT3
Delay Times vs Current 60 50 t d(on) and td(off) (ns)
VDS=333V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 80
VDS=333V RG=5 T J=125C L=100H
30 20 10 0 0
t r and tf (ns)
40
td(off)
60
tf
40
td(on)
20
tr
0 10 20 30 40 50 ID, Drain Current (A) 60 0 10 20 30 40 50 60 I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
1.2
Switching Energy (mJ)
2.5
Switching Energy (mJ)
1 0.8 0.6 0.4 0.2 0 0
VDS=333V RG=5 TJ=125C L=100H
Eon
2 1.5 1 0.5 0
VDS=333V ID=26A T J=125C L=100H
Eoff
Eoff
Eon
10
20
30
40
50
60
0
10
20
30
40
50
I D, Drain Current (A) Operating Frequency vs Drain Current
V DS=333V D=50% R G=5 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
500 Frequency (kHz) 400 300 200 100 0 5 10 15
Hard switching ZCS ZVS
IDR, Reverse Drain Current (A)
600
1000
100
TJ =150C
10 TJ=25C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
APTM50H14FT3 - Rev 0 September, 2004
20
25
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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