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APTM50UM09F-ALN
Single Switch MOSFET Power Module
SK S D
VDSS = 500V RDSon = 9 m max @ Tj = 25C ID = 497A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile
G
DK
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50UM09F-ALN Rev 0 July, 2004
Max ratings 500 497 371 1988 30 9 5000 71 50 3000
Unit V A V m W A
APTM50UM09F-ALN
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1.5mA Min 500 Tj = 25C VGS = 0V,VDS = 400V Tj = 125C VGS = 10V, ID = 248.5A VGS = VDS, ID = 30mA VGS = 30 V, VDS = 0V
VGS = 0V,VDS = 500V
Typ
Max 600 2500 9 5 450
Unit V A m V nA
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID =497A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 497A R G = 0.5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 497A, R G = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 497A, R G =0.5
Min
Typ 63.3 12.4 0.63 1200 300 630 21 42 96 100 6 6.2 9.48 6.96
Max
Unit nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 497A IS = - 497A VR = 250V diS/dt = 600A/s IS = - 497A VR = 250V diS/dt = 600A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 15.6 60
Max 497 371 1.3 18 300 600
Unit A V V/ns ns C
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 497A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
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APTM50UM09F-ALN Rev 0 July, 2004
APTM50UM09F-ALN
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Transistor 2500 -40 -40 -40 3 2
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 0.025 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink For teminals M6 M5
Package outline
APT website - http://www.advancedpower.com
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APTM50UM09F-ALN Rev 0 July, 2004
APTM50UM09F-ALN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.03 Thermal Impedance (C/W) 0.025 0.02 0.015 0.01 0.005 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1200
VGS =10&15V
1080 7.5V ID, Drain Current (A) 7V 6.5V 960 840 720 600 480 360 240 120 0 0
Transfert Characteristics
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
900
600 6V 300 0 0 5.5V 5V 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current
TJ =25C TJ =125C 1 2 3 4 5 TJ=-55C 6 7 8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 520 ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
Normalized to VGS=10V @ 248.5A
416 312 208 104 0
VGS=10V
VGS =20V
180
APT website - http://www.advancedpower.com
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APTM50UM09F-ALN Rev 0 July, 2004
360 540 720 900 I D, Drain Current (A)
1080
25
50 75 100 125 TC, Case Temperature (C)
150
APTM50UM09F-ALN
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000 I D, Drain Current (A) 100 us 1 ms
VGS=10V ID=248.5A
1.05
0.95
0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
1000
limited by RDSon
100
10
10 ms Single pulse TJ=150C 1 10 100 1000 VDS, Drain to Source Voltage (V)
1
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) Coss 10000
Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 250 500 750 1000 1250 1500 Gate Charge (nC)
APTM50UM09F-ALN Rev 0 July, 2004
I D=497A TJ =25C
VDS=100V V DS =250V VDS=400V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
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APTM50UM09F-ALN
Delay Times vs Current 110 90 70 50 30 td(on) 160
VDS=333V RG=0.5 TJ=125C L=100H
Rise and Fall times vs Current
td(on) and t d(off) (ns)
t r and tf (ns)
VDS=333V RG=0.5 TJ=125C L=100H
td(off)
120 80
tf
tr
40
10 100 200 300 400 500 600 700 800 I D, Drain Current (A) Switching Energy vs Current 18 Switching Energy (mJ) 15 12 9 6 3 0 100 200 300 400 500 600 700 800 I D, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 50 100 150 200 250 300 350 400 450 I D, Drain Current (A)
VDS=333V D=50% RG=0.5 TJ=125C TC=75C ZCS ZVS
0 100 200 300 400 500 600 700 800 ID, Drain Current (A) Switching Energy vs Gate Resistance 38 34 30 26 22 18 14 10 6 0 1 2 3 4 5 6 7 8 9 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000 Eon
V DS=333V ID=497A T J=125C L=100H
Eon
Eoff
IDR, Reverse Drain Current (A)
350
Switching Energy (mJ)
V DS=333V RG=0.5 T J=125C L=100H
Eoff
1000
TJ=150C TJ=25C
100
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APTM50UM09F-ALN Rev 0 July, 2004
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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