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APTM50UM13S-ALN
Single switch Series & parallel diodes MOSFET Power Module
SK CR1 D
VDSS = 500V RDSon = 13m max @ Tj = 25C ID = 335A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile
S
Q1 G
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50UM13S-ALN Rev 0 July, 2004
Max ratings 500 335 250 1340 30 13 3290 71 50 3000
Unit V A V m W A
APTM50UM13S-ALN
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1mA Min 500 Tj = 25C VGS = 0V,VDS = 400V Tj = 125C VGS = 10V, ID = 167.5A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V
VGS = 0V,VDS = 500V
Typ
Max 400 2000 13 5 300
Unit V A m V nA
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID =335A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 335A R G = 0.8 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 335A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 335A, R G =0.8
Min
Typ 42.2 8.24 0.42 800 200 420 21 42 96 100 4 4.16 6.32 4.64
Max
Unit nF
nC
ns
mJ
mJ
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 125C Tj = 25C Tj = 125C
60 240 1000
ns nC
APT website - http://www.advancedpower.com
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APTM50UM13S-ALN Rev 0 July, 2004
Test Conditions 50% duty cycle IF = 240A IF = 480A IF = 240A IF = 240A VR = 133V di/dt = 800A/s IF = 240A VR = 133V di/dt = 800A/s
Min
T c = 85C
Tj = 125C Tj = 25C
Typ 240 1.1 1.4 0.9 31
Max 1.15
Unit A V
APTM50UM13S-ALN
Parallel diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 360A IF = 720A IF = 360A IF = 360A VR = 400V di/dt = 1000A/s IF = 360A VR = 400V di/dt = 1000A/s Min
T c = 70C
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 360 1.6 1.9 1.4 130 170 1.32 5.5
Max 1.8
Unit A V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode
Min
Typ
Max 0.038 0.23 0.16 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
2500 -40 -40 -40 3 2
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50UM13S-ALN Rev 0 July, 2004
APTM50UM13S-ALN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 Thermal Impedance (C/W) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 0.5 0.3 0.9 0.7
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 800
VGS=10&15V
720 7.5V ID, Drain Current (A) 7V 6.5V 640 560 480 400 320 240 160 80 0 25 0
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
600
400 6V 200 0 0 5.5V 5V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
TJ=25C TJ=125C 1 2 3 4 5 TJ=-55C 6 7 8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 350 ID, DC Drain Current (A) 720
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
Normalized to VGS=10V @ 167.5A
300 250 200 150 100 50 0 25 50 75 100 125 TC, Case Temperature (C) 150
APTM50UM13S-ALN Rev 0 July, 2004
VGS=10V
VGS=20V
120
240 360 480 600 I D, Drain Current (A)
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APTM50UM13S-ALN
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) Coss 10000 I D, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID=167.5A
1000
limited by RDSon
100 us 1 ms
100
10
Single pulse TJ=150C 1
10 ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC)
APTM50UM13S-ALN Rev 0 July, 2004
I D=335A TJ =25C
VDS=100V V DS =250V VDS=400V
10000
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
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APTM50UM13S-ALN
Delay Times vs Current 110 90 70 50 30 10 60 140 220 300 380 460 I D, Drain Current (A) 540 td(on) 160
VDS=333V RG=0.8 TJ=125C L=100H
Rise and Fall times vs Current tf
td(on) and t d(off) (ns)
t r and tf (ns)
VDS=333V RG=0.8 TJ=125C L=100H
td(off)
120 80
tr
40
0 60 140 220 300 380 460 ID, Drain Current (A) 540
Switching Energy vs Current 12 Switching Energy (mJ) 10 8 6 4 2 0 60 140 220 300 380 460 I D, Drain Current (A) 540 Eon Switching Energy (mJ)
V DS=333V RG=0.8 T J=125C L=100H
Switching Energy vs Gate Resistance 24 20 16 12 8 4 0 2 4 6 8 10 12 14 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ =150C 100 TJ =25C Eon
VDS=333V ID=335A T J=125C L=100H
Eoff
Eoff
Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 400
Frequency (kHz)
300
ZCS
200
100
VDS=333V D=50% RG=0.8 TJ=125C TC=75C
ZVS Hard switching
10
0 50 100
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APTM50UM13S-ALN Rev 0 July, 2004
150 200 250 300 I D, Drain Current (A)
350
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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