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LAB
TO247-AD Package Outline.
Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640)
SEME
SML5020BN
4TH GENERATION MOSFET
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
20.80 (0.819) 21.46 (0.845)
3.55 (0.140) 3.81 (0.150)
4.50 (0.177) M ax.
1
2
3
1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123)
0.40 (0.016) 0.79 (0.031)
1.01 (0.040) 1.40 (0.055)
2.21 (0.087) 2.59 (0.102)
5.25 (0.215) BSC
VDSS ID(cont) RDS(on)
500V 28.0A W 0.20W
Pin 1 - Gate
Pin 2 - Drain
19.81 (0.780) 20.32 (0.800)
Pin 3 - Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VDSS ID IDM VGS PD TJ , TSTG TL Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. 500 28 112 30 360 2.9 -55 to 150 300 V A A V W W/C C
STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated)
Characteristic BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250mA VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 28 0.20 Min. 500 Typ. Max. Unit V 250 1000 100 4
mA
nA V A
W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/94
LAB
DYNAMIC CHARACTERISTICS
Characteristic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8W Min. Typ. 2890 590 230 140 18 75 19 43 85 56 Max. Unit 3500 830 350 210 27 110 38 86 125 112 ns nC pF
SEME
SML5020BN
SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic IS ISM VSD trr Qrr Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/ms IS = - ID [Cont.] , dls / dt = 100A/ms 215 3 430 7 Min. Typ. Max. Unit 28 112 1.3 860 14 A V ns
mC
SAFE OPERATING AREA CHARACTERISTICS
Characteristic SOA1 Safe Operating Area Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Min. 360 Typ. Max. Unit W
SOA2 ILM
Safe Operating Area Inductive Current Clamped
360 112
W A
THERMAL CHARACTERISTICS
RqJC RqJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 Min. Typ. Max. Unit 0.34 C/W 40
CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/94

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