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| S T M6920 S amHop Microelectronics C orp. Aug,18 2005 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m W ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON). 25 @ V G S = 10V 45 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C ID IDM IS PD TJ, TS TG Limit 40 25 7 5.9 22 1.7 2 1.44 -55 to 150 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M6920 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 6A VGS =4.5V, ID= 5A VDS = 5V, VGS = 10V VDS = 5V, ID = 6A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.8 20 35 15 8 947 117 77 2 16.7 19 3.6 10.1 5 14 24 12 4 5 28.7 38 18.2 8.7 2.8 3.3 1231 152 100 2.5 25 45 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 20V ID = 1 A VGS = 10V R GE N = 3.3 ohm VDS =20V, ID =6A,VGS =10V VDS =20V, ID =6A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =20V, ID = 6 A VGS =4.5V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M6920 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.78 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 V G S =10,9,8,7,6,5V 25 16 20 V G S =4V ID, Drain C urrent(A) ID, Drain C urrent (A) 25 C 15 T j=125 C 10 -55 C 5 0 0.0 12 8 4 0 V G S =3V 0 2 4 6 8 10 12 0.6 1.2 1.8 2.4 3.0 3.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 1500 1200 C is s 900 600 300 0 C rs s 0 5 10 15 20 25 30 F igure 2. Trans fer C haracteris tics V G S =10V ID=6A R DS (ON), On-R es is tance Normalized 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) C os s -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T M6920 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 18 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gFS , T rans conductance (S ) 12 9 6 3 0 0 5 10 15 V DS =5V 20 25 Is , S ource-drain current (A) 15 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 VDS =20V ID=6A 10 R (O DS N) L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =10V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T M6920 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve S T M6920 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 6 S T M6920 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 7 |
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