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0.2 Watt, High Linearity InGaP HBT Amplifier
AH110
The Communications Edge TM Product Information
Product Features
x 50 - 2000 MHz x +23 dBm P1dB x +39 dBm Output IP3
Product Description
The AH110 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve performance over a broad range with +39 dBm OIP3 and +23 dBm of compressed 1-dB power and is housed in an industry standard SOT-89 SMT package. All devices are 100% RF and DC tested. The product is targeted for use as a gain block/driver amplifier for various current and next generation wireless technologies such as GPRS, GSM and CDMA, where high linearity and medium power is required. In addition, the AH110 will work for numerous other applications within the 50 to 2000 MHz frequency range.
Functional Diagram
GND 4
x 20.5 dB Gain @ 900 MHz
x 17.6 dB Gain @ 1900 MHz x SOT-89 SMT Package
x Single Positive Supply (+8V)
1 RF IN
2 GND
3 RF OUT
Applications
x Mobile Infrastructure x Defense/Homeland Security
AH110-89 / AH110-89G
Specifications (1)
Parameters
Test Frequency Gain Output P1dB Output OIP3 Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR, 1900 MHz
Typical Performance (5)
Units
MHz dB dBm dBm MHz dB dB dB dBm dBm dBm dB mA V
Min
Typ
900 20.5 +23 +39 1900 17.6 17 7.4 +23 +38 +16 5.2 100 5
Max
Parameters
Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power (6) Noise Figure Supply Bias

Units
MHz dB dB dB dBm dBm dBm dB
Typical
900 1900 20.5 17.6 -20 -17 -9.5 -7.4 +22.8 +23 +39 +38 +17 +16 5 5.2 +8 V @ 100 mA
17
+36.5
5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, Icc = 100 mA, +25 C, Rbias = 30 . 6. This is measured with an IS-95 signal at (9 ch. Fwd)-45dBc ACPR.
Noise Figure Operating Current Range (3) Device Voltage (4)
85
135
1. Test conditions unless otherwise noted: 25 C, Vsupply = +8V, in tuned application circuit with Rbias = 30 . 2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. The tuned application circuit is tuned for optimum ACPR performance. An improvement in OIP3 of 2 to 3 dB can be achieved for tuning for optimum OIP3 (with slightly degraded ACPR performance). 3. This corresponds to the quiescent current or operating current under small-signal conditions. 4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms are recommended for proper operation. Operation of the device directly to a 5 V supply could lead to thermal damage to the device.
Absolute Maximum Rating
Parameters
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature -40 to +85 qC -55 to +150 qC +15 dBm +6 V 150 mA 1.5 W +250 qC
Ordering Information
Part No.
AH110-89 AH110-89G AH110-89PCB900 AH110-89PCB1900
(leaded SOT-89 Pkg)
Rating
InGaP HBT Gain Block
Description
(lead-free/green/RoHS-compliant SOT-89 Pkg)
InGaP HBT Gain Block
900 MHz Evaluation Board 1900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage. . Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
0.2 Watt, High Linearity InGaP HBT Amplifier
S-parameters (Vdevice = +5V, Icc = 100 mA, 25 C, unmatched 50 ohm system)
30
AH110
The Communications Edge TM Product Information
Typical Device Data
1.0
0.8
DB(|S[2,1]|)
25 Gain (dB)
DB(GMax)
0. 4
6 0.
6 0.
0.8
1.0
Gain / Maximum Stable Gain
0 3.
2. 0
2. 0
0 4.
0. 2 5 .0
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
10.0
20
15
-0.8
Swp Min 0.01483GHz
-0.8
0
0.5
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 - 2500 MHz, with markers placed at 0.25 - 2 GHz in 0.25 GHz increments.
S-Parameters (Vdevice = +5 V, Icc = 100 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB)
S21 (ang)
-1.0
S12 (dB)
S12 (ang)
S22 (dB)
-1.0
1 Frequency (GHz)
1.5
2
-0 .6
-0
.6
.0 -2
.0 -2
10
.4 -0
-0
.4
Swp Min 0.01483GHz
S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2500
-5.21 -4.92 -4.72 -4.31 -4.10 -4.19 -4.63 -5.64 -7.84 -13.52 -19.89 -6.99 -2.84 -1.18 -0.78
-158.20 -170.08 -177.73 173.22 163.26 152.57 140.41 126.43 109.08 83.27 -85.25 -131.98 -160.75 177.40 167.87
27.34 25.32 24.15 22.43 20.91 19.68 18.82 18.35 18.13 18.12 17.78 16.44 14.09 10.90 9.28
141.96 144.95 138.50 118.30 100.56 85.04 69.98 54.85 38.12 17.54 -7.75 -37.07 -64.48 -86.11 -96.04
-32.11 -31.61 -31.37 -30.63 -30.32 -29.78 -29.74 -29.31 -29.86 -31.16 -34.99 -34.48 -29.33 -26.64 -25.96
16.29 9.45 6.88 7.98 5.52 2.65 -2.18 -11.26 -26.72 -52.52 -105.12 161.53 106.22 75.52 66.16
-6.58 -7.49 -7.96 -8.46 -8.81 -9.07 -9.12 -8.95 -8.04 -6.16 -3.43 -1.36 -0.69 -0.93 -1.28
-132.30 -157.02 -171.72 178.73 174.06 171.40 169.67 170.98 175.14 179.09 176.43 164.56 149.67 136.25 130.16
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
C12
C7
C9
C8
Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors. The markers and vias are spaced in .050" increments. C7/C8 are for 900 MHz matching circuits and C9/C12 are for 1900 MHz matching circuits.
. Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
-4 .0 -5 . 0
-3 .0
-4 .0 -5 . 0
2 - 0.
2 -0 .
-10.0
0. 4
-10.0
-3 .0
S11
Swp Max 2.01283GHz
S22
Swp Max 2.01283GHz
0 3.
0 4.
5. 0
0.2
10.0
0.2 Watt, High Linearity InGaP HBT Amplifier
AH110
The Communications Edge TM Product Information
900 MHz Application Circuit (AH110-89PCB900)
Typical RF Performance at 25qC
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+9 dBm / tone, 1 MHz spacing)
8v C = .1uF
900 MHz 20.5 dB -20 dB -9.5 dB +22.8 dBm +39 dBm +17 dBm 5 dB +5 V 100 mA
CAP PORT ID= C6 P= 1 Z= 50 Ohm C= 56 pF CAP ID= C4 C= 56 pF
RES ID= R3 R= 220 Ohm
RES ID= R2 R= 390 Ohm
8.2v zener
RES ID= R1 R= 30 Ohm
CAP ID= C3
CAP ID= C2 C= 1000 pF
IND ID= L2 L= 33 nH SUBCKT AH110 900 MHz
IND ID= L1 L= 10 nH
CAP ID= C1 C= 56 pF CAP ID= C5 C= 56 pF
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device Voltage Quiescent Current
Please see note 2 on page 1.
|
24 22
S11 (dB)
S22 (dB)
S21 (dB)
20 +25C 18 16 840 +85C -40C 860 880 900 920 940
8 6
NF (dB)
P1 dB (dBm)
4 2 0 840 +25C +85C -40C 860 880 900 920 940
23 22 21 20 840 +25C +85C -40C 860 880 900 920 940
ACPR (dBc)
42 40
OIP3 (dBm)
36 34 32 30 840
38 36 34 32 -40
OIP3 (dBm)
38
OIP3 (dBm)

WJ Communications, Inc
RES ID= R4 R= 22 Ohm
CAP ID= C7 C= 5.6 pF
CAP ID= C8 C= 0.8 pF
PORT P= 2 Z= 50 Ohm RES ID= R5 R= 50 Ohm
C7 is placed at silkscreen marker `C' or center of component placed at 5.6 deg. @ 900 MHz away from pin 1. C8 is placed at 22 deg. @ 900 MHz away from pin 3.
S21 vs. Frequency
0 -5 -10 -15 -20 -25 -30 -35 -40 840
S11 vs. Frequency
0 -5 -10 -15 -20 -25 840
S22 vs. Frequency
+25C +85C -40C 860 880 900 920 940
+25C +85C -40C 860 880 900 920 940
Frequency (MHz)
Noise Figure vs. Frequency
25 24
P1 dB vs. Frequency
-40 -45 -50 -55 -60 -65 -70
Frequency (MHz)
IS-95, 9 Ch. Fw d, 885 KHz offset, 30 KHz Meas. BW, 900 MHz
ACPR vs. Channel Power
Frequency (MHz)
+25C +85C -40C 12 13 14 15 16 17 18
OIP3 vs. Frequency +25C, +9 dBm / tone
Frequency (MHz)
42 40
OIP3 vs. Temperature Fre. = 900, 901 MHz, +9 dBm / tone
42 40 38 36 34 32 6 7
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power Freq. = 900, 901 MHz, +25C
860
Frequency (MHz)
880
900
920
940
-15
Temperature (C)
10
35
60
85
8
9 10 11 12 Output Power (dBm)
13
14
. Specifications and information are subject to change without notice Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com December 2004
0.2 Watt, High Linearity InGaP HBT Amplifier
AH110
The Communications Edge TM Product Information
1900 MHz Application Circuit (AH110-89PCB1900)
Typical RF Performance at 25qC
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+9 dBm / tone, 1 MHz spacing)
8v C = .1uF
1900 MHz 17.6 dB -17 dB -7.4 dB +23 dBm +38 dBm +16 dBm 5.2 dB +5 V 100 mA
PORT P= 1 Z= 50 Ohm CAP ID= C6 C= 56 pF CAP ID= C4 C= 56 pF
RES ID= R3 R= 220 Ohm
RES ID= R2 R= 390 Ohm
8.2v zener
RES ID= R1 R= 30 Ohm
CAP ID= C3
CAP ID= C2 C= 1000 pF
IND ID= L2 L= 15 nH IND ID= L3 L= 1 nH SUBCKT AH110 1.9GHz
IND ID= L1 L= 15 nH
CAP ID= C1 C= 56 pF CAP ID= C5 C= 56 pF
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device Voltage Quiescent Current
Please see note 2 on page 1.
25 20
S21 (dB)
S11 (dB)
S22 (dB)
15 10 5 +25C +85C -40C
0 1850 1870 1890 1910 1930 1950 1970 1990
7 6 4 3 2 1 5
NF (dB)
ACPR (dBc)
P1 dB (dBm)
0 1850 1870 1890 1910 1930 1950 1970 1990 Frequency (MHz)
42 40 38 36 34 32 1850 1870 1890 1910 1930 1950 1970 1990
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)

WJ Communications, Inc
(c)
RES ID= R4 R= 22 Ohm
CAP ID= C10 C= 0.7 pF
CAP ID= C7 C= 1.5 pF
PORT P= 2 Z= 50 Ohm
C9 placed at silkscreen marker `8" or center of component placed at 39 deg. @ 1900 MHz away from pin 1. C12 is placed at silkscreen marker `I" or center of component placed at 43 deg. @ 1.9 GHz away from pin 1.
S21 vs. Frequency
0 -5 -10 -15 -20
S11 vs. Frequency
0 -2 -4 -6 -8 -10
S22 vs. Frequency
+25C +85C -40C
+25C +85C -40C
-25 1850 1870 1890 1910 1930 1950 1970 1990 Frequency (MHz)
25 23 21 19 17 +25C +85C
-12 1850 1870 1890 1910 1930 1950 1970 1990
Noise Figure vs. Frequency
Frequency (MHz)
P1 dB vs. Frequency
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd. 885 KHz offset, 30 KHz Meas. BW, 1900 MHz -35 -40 -45 -50 -55 -60 -65 -70 10 11 12 13 14 15 16 17 18
Frequency (MHz)
+25C +85C -40C
-40C 15 1850 1870 1890 1910 1930 1950 1970 1990 Frequency (MHz)
Output Power (dBm)
42 40 38 36 34 32
OIP3 vs. Frequency +25C, +9 dBm / tone
42 40 38 36 34 32 -40
OIP3 vs. Temperature freq. = 1900, 1901 MHz, +9 dBm / tone
OIP3 vs. Output Power Freq. = 1900, 1901 MHz, 25C
Frequency (MHz)
-15
Temperature (C)
10
35
60
85
6
7
8
9
10
11
12
13
14
Output Power (dBm)
. Specifications and information are subject to change without notice
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
0.2 Watt, High Linearity InGaP HBT Amplifier
AH110
The Communications Edge TM Product Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
AH110 (SOT-89 Package) Mechanical Information Outline Drawing
Product Marking
The component will be marked with an "AH110" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Land Pattern
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135" ) diameter drill and have a final plated thru diameter of .25 mm (.010" ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
Rating
-40 to +85q C 128q C / W 149q C
100000
MTTF vs. GND Tab Temperature
10000
Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 100 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.

1000
100 60 70 80 90 100 110 120 Tab Temperature (C)
. Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
0.2 Watt, High Linearity InGaP HBT Amplifier
AH110
The Communications Edge TM Product Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
AH110-G (Green / Lead-free SOT-89 Package) Mechanical Information
Outline Drawing
Product Marking
The component will be marked with an " AH110G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the " Application Notes" section.
MSL / ESD Rating
ESD Rating: Value: Test: Standard: Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114
Land Pattern
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135" ) diameter drill and have a final plated thru diameter of .25 mm (.010" ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
Rating
-40 to +85q C 128q C / W 149q C
100000
MTTF vs. GND Tab Temperature
10000
Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 100 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.

1000
100 60 70 80 90 100 110 120 Tab Temperature (C)
. Specifications and information are subject to change without notice

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004

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