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FAN7383 Half-Bridge Gate-Drive IC
September 2006
FAN7383 Half-Bridge Gate-Drive IC
Features
Floating Channel Designed for Bootstrap Operation to +600V. Typically 350mA/650mA Sourcing/Sinking Current Driving Capability for Both Channels Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V High-Side Output in Phase of IN Input Signal Built-in UVLO Functions for Both Channels Built-in Common-Mode dv/dt Noise Canceling Circuit Typically Internal 330nsec Minimum Dead Time Programmable Turn-On Delay Time Control (Dead Time)
Description
The FAN7383 is a half-bridge gate-drive IC with shutdown and programmable dead-time control functions for driving MOSFETs and IGBTs that operate up to +600V. Fairchild's high voltage process and common-mode noise canceling technique give stable operation of highside drivers under high-dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS= -9.8V (typical) for VBS=15V. The UVLO circuits for both channels prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Output drivers typically source/sink 350mA/650mA, respectively, which is suitable for all kinds of half and full bridge inverter. 14-SOP
Applications
SMPS Motor Drive Inverter Fluorescent Lamp Ballast HID Ballast
1
Ordering Information
Part Number
FAN7383M FAN7383MX
Package
14-SOP
Pb-Free
Yes
Operating Temperature Range Packing Method
-40C ~ 125C Tube Tape & Reel
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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FAN7383 Half-Bridge Gate-Drive IC
Typical Application Circuit
DBOOT
VDC
VDD
PWM
PWM IC Control
Shutdown
1
IN SD DT VDD LO1 LO2 GND
VB HO1 HO2 VS NC NC NC
14
RHON
13
2
3
12
RHOFF CBOOT
4
11
5
10
RDT
6
9
7
8
RLOFF
RLON
FAN7383 Rev:00
Figure 1. Application Circuit for Half-Bridge Switching Power Supply
VDC VCC
VDD VB HO1 HO2 VDD VB HO1 HO2 VS VS IN SD
PHA PHB SD
IN
Forward
M
SD
FAN7383
LO1 DT GND LO2
FAN7383
LO1 DT GND LO2
Reverse
DC Motor Controller
FAN7383 Rev:00
Figure 2. Application Circuit for Full-Bridge DC Motor Driver
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0 2
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FAN7383 Half-Bridge Gate-Drive IC
Internal Block Diagram
14
UVLO
VB HO1 HO2
13 12
DRIVER
PULSE GENERATOR
NOISE CANCELLER
R S
R Q
IN
1
SCHMITT TRIGGER INPUT
11
HS(ON/OFF)
VS VDD LO1 LO2
UVLO
4
SD
2
SHOOT THOUGH PREVENTION
LS(ON/OFF)
5 6
DRIVER
DT
3
DEAD-TIME { DTMIN=330nsec }
DELAY
7
GND
FAN7383 Rev:01
Figure 3. Functional Block Diagram of FAN7383
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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3
FAN7383 Half-Bridge Gate-Drive IC
Pin Configuration
IN SD DT VDD LO1 LO2 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VB HO1 HO2 VS NC NC NC
Figure 4. Pin Configuration (Top View)
FAN7383
FAN7383 Rev:00
Pin Definitions
Pin #
1 2 3 4 5 6 7 8 9 10 11 12 13 14
Name
IN SD DT VDD LO1 LO2 GND NC NC NC VS HO2 HO1 VB Logic Input for Gate Driver
Description
Logic Input for Shutdown (Active Low) Programmable Dead-Time Control with External Resistor Low Side Supply Voltage Low Side Driver Source Output Low Side Driver Sink Output Ground Not connected Not connected Not connected High Side Floating Supply Return High Side Driver Sink Output High Side Driver Source Output High Side Floating Supply
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
www.fairchildsemi.com
4
FAN7383 Half-Bridge Gate-Drive IC
Absolute Maximum Ratings
The "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. The "Recommended Operating Conditions" table defines the conditions for actual device operation. TA = 25C unless otherwise specified.
Symbol
VS VB VHO VDD VLO VIN VSD VDT GND PD(1)(2)(3) JA TJ TSTG Notes: dVS/dt
Parameter
High-side offset voltage High-side floating supply voltage High-side floating output voltage HO1, HO2 Low-side and logic fixed supply voltage Low-side output voltage LO1, LO2 Logic input voltage (IN) Shutdown logic input voltage Dead-time control voltage Logic ground Allowable offset voltage slew rate Power dissipation Thermal resistance, junction-to-ambient Junction temperature Storage temperature
Min.
VB-25 -0.3 VS-0.3 -0.3 -0.3 -0.3 -0.3 -0.3 VDD-25
Max.
VB+0.3 625 VB+0.3 25 VDD+0.3 VDD+0.3 VDD+0.3 5.0 VDD+0.3 50 1.0 110 150 150
Unit
V V V V V V V V V V/nsec W C/W C C
1. When mounted on 76.2 x 114.3 x 1.6mm PCB. (FR-4 glass epoxy material). 2. Please refer to: JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 3. Do not exceed PD under any circumstances.
Recommended Operating Conditions
Symbol
VB VS VDD VHO VLO VIN TA
Parameter
High-side floating supply voltage High-side floating supply offset voltage Low-side supply voltage High-side (HO) output voltage Low-side (LO) output voltage Logic input voltage (IN) Ambient temperature
Condition
Min.
VS+15 6-VDD 15 VS GND GND -40
Max.
VS+20 600 20 VB VDD VDD 125
Unit
V V V V V V C
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
www.fairchildsemi.com
5
FAN7383 Half-Bridge Gate-Drive IC
Electrical Characteristics
VBIAS (VDD, VBS) = 15.0V, RDT = GND, TA = 25C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to GND and VS is applicable to HO and LO.
Symbol
IQBS ISD(4) IPBS IPDD ILK VDDUV+ VBSUV+ VDDUVVBSUVVDDUVH VBSUVH VOH VOL IO+ IOVS VIH VIL IIN+ IINSD+ SDRPD IQDD
Characteristics
Quiescent VBS supply current Quiescent VDD supply current VDD supply current at shutdown mode Operating VBS supply current Operating VDD supply current Offset supply leakage current VDD and VBS supply under-voltage positive going threshold VDD and VBS supply under-voltage negative going threshold VDD and VBS supply under-voltage lockout hysteresis High-level output voltage, VBIAS-VO Low-level output voltage, VO Output high short-circuit pulse current Output low short-circuit pulsed current Allowable negative VS pin voltage for IN signal propagation to HO Logic "1" input voltage Logic "0" input voltage Logic "1" input bias current Logic "0" input bias current Shutdown "1" input voltage Shutdown "0" input voltage Input pull-down resistance VIN=5V VIN=0V
Test Condition
VIN=0V or 5V VIN=0V or 5V, RDT=0 SD=GND fIN=20kHz,rms value fIN=20kHz,rms value,RDT=0 VB=VS=600V
Min. Typ. Max. Unit
35 650 650 400 950 90 900 900 700 1200 10 A
SUPPLY CURRENT SECTION
POWER SUPPLY SECTION
10.7 10.0 11.6 10.8 0.8 12.5 11.6 V
GATE DRIVER OUTPUT SECTION
IO=20mA VO=0V, VIN=5V with PW<10s VO=15V, VIN=0V with PW<10s 250 500 350 650 -9.8 -7.0 1.0 0.6 V V mA mA V
LOGIC INPUT SECTION (INPUT AND SHUTDOWN)
2.9 1.2 50 100 2.0 1.2 2.9 100 V V A A V V K
Note: 4.This parameter, although guaranteed, is not 100% tested in production.
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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6
FAN7383 Half-Bridge Gate-Drive IC
Dynamic Electrical Characteristics
VBIAS (VDD, VBS) = 15.0V, VS = GND, CL=1000pF, RDT = GND, and TA = 25C, unless otherwise specified.
Symbol
tON tOFF tR tF tSD
(5)
Parameter
Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Shutdown propagation delay Dead-time LO OFF to HO ON and HO OFF to LO ON Dead-time matching RDT=0 VS=0V VS=0V
Conditions
Min. Typ. Max. Unit
500 170 50 30 100 250 1.20 330 1.68 0 0 670 250 100 80 180 420 2.30 60 150
nsec
DT1, DT2 DMT
RDT= 200K RDT=0 RDT=200K
Note: 5.This parameter, although guaranteed, is not 100% tested in production.
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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7
FAN7383 Half-Bridge Gate-Drive IC
Typical Characteristics
11.6
12.0
11.4
VDDUV+ ,VBSUV+ [V]
11.6 11.4 11.2 11.0 10.8 -40 -20 0 20 40 60 80 100 120
VDDUV- ,VBSUV- [V]
11.8
11.2 11.0 10.8 10.6 10.4 10.2 10.0 -40 -20 0 20 40 60 80 100 120
Temperature [C]
Temperature [C]
Figure 5. VDD/VDD UVLO (+) vs. Temperature
Figure 6. VDD/VBS UVLO (-) vs. Temperature
1000 800
100 80
IQDD [A]
600 400 200
IQBS [A]
-20 0 20 40 60 80 100 120
60 40 20 0 -40
-40
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 7. VDD Quiescent Current vs. Temperature
Figure 8. VBS Quiescent Current vs. Temperature
1600 1400
800
600
IPDD [A]
1000 800
IPBS [A]
-20 0 20 40 60 80 100 120
1200
400
200 600 400 -40 0 -40
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 9. VDD Operating Current vs. Temperature
Figure 10. VBS Operating Current vs. Temperature
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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8
FAN7383 Half-Bridge Gate-Drive IC
Typical Characteristics (Continued)
100 80
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40
IIN+ [A]
40 20 0 -40
VIH [V]
60
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 11. Logic Input Current vs. Temperature
Figure 12. Logic Input High Voltage vs. Temperature
3.0 2.5
3.0 2.5
1.5 1.0 0.5 0.0 -40
SD+ BAR [V]
-20 0 20 40 60 80 100 120
2.0
2.0 1.5 1.0 0.5 0.0 -40
VIL [V]
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 13. Logic Input Low Voltage vs. Temperature
Figure 14. SD Positive Threshold vs. Temperature
3.0 2.5
100 80
SD- BAR [V]
tR [nsec]
-20 0 20 40 60 80 100 120
2.0 1.5 1.0 0.5 0.0 -40
60 40 20 0 -40
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 15. SD Negative Threshold vs. Temperature
Figure 16. Rising Time vs. Temperature
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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FAN7383 Half-Bridge Gate-Drive IC
Typical Characteristics (Continued)
80
700 600
60
tON [nsec]
tF [nsec]
500 400 300 200 -40
40
20
0 -40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 17. Falling Time vs. Temperature
Figure 18. Turn-on Delay Time vs. Temperature
300 250 400
DT1, RDT= 0 [nsec]
tOFF [nsec]
200 150 100 50 0 -40
360
320
280
-20
0
20
40
60
80
100
120
240 -40
-20
0
20
40
60
80
100
120
Temperature [C]
Temperature [C]
Figure 19. Turn-off Falling Time vs. Temperature
Figure 20. Dead-Time (RDT=0k) vs. Temperature
2.4
2.0 1.6
DT1, RDT= 200k [nsec]
2.2 2.0 1.8 1.6 1.4 1.2 -40
Deadtime [S]
1.2 0.8 0.4 0.0 0
-20
0
20
40
60
80
100
120
20
40
60
80
100
120
140
160
180
200
Temperature [C]
RDT [kohm]
Figure 21. Dead-Time (RDT=200k) vs. Temperature
Figure 22. RDT vs. Dead-Time
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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10
FAN7383 Half-Bridge Gate-Drive IC
Typical Characteristics (Continued)
-6 -8
VS [V]
-10 -12 -14 -40 -20 0 20 40 60 80 100 120
Temperature [C]
Figure 23. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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11
FAN7383 Half-Bridge Gate-Drive IC
Switching Time Definitions
+15V
10F
100nF
FAN7383
1
10F 100nF
+15V
IN SD DT VDD LO1 LO2 GND
VB HO1 HO2 VS NC NC NC
14
2
13 1nF
HO1, 2
SD
3
12
4
11
LO1, 2
5
10
6 1nF 7
9
8
FAN7383 Rev:00
Figure 24. Switching Time Test Circuit
IN
HO1, 2
LO1, 2
SD
DT1 DT2 Shutdown DT2 DT1 Shutdown DT1
FAN7383 Rev:00
Figure 25. Input / Output Waveforms
IN
50%
50%
tOFF
90%
tON
LO1, 2
10%
90%
HO1, 2
tON
10%
tOFF
FAN7383 Rev:00
Figure 26. Switching Time Waveform Definitions
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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12
FAN7383 Half-Bridge Gate-Drive IC
50%
SD
90%
HO or LO
tSD
FAN7383 Rev:00
Figure 27. Shutdown Waveform Definition
90%
HO
10%
DT1
90%
DT2
LO
MDT= DT1-DT2
10%
FAN7383 Rev:00
Figure 28. Dead-Time Waveform Definition
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
www.fairchildsemi.com
13
FAN7383 Half-Bridge Gate-Drive IC
Typical Application Information
1. Normal Operating Consideration
The FAN7383 is a single PWM input half-bridge gatedrive IC with programmable dead-time and shutdown function. The dead-time is set with a resistor(RDT) at the DT pin. The wide dead-time programming range provides the flexibility to optimize drive signal timing for a selection of switching devices (MOSFET or IGBT) and applications. The turn-on time delay circuitry (Dead-Time) accommodates resistor values from 0 to 200k with a dead-time proportional to the RDT resistance. Grounding the DT pin programs the FAN7383 to drive both outputs with minimum dead time. If the SD pin voltage decreases below 1.2V in normal operation, the IC enters the shutdown mode.
3. Layout Consideration
For optimum performance of high- and low-side gate drivers, considerations must be taken during printed circuit board (PCB) layout.
3.1 Supply Capacitors
If the output stages are able to quickly turn on the switching device with high value of current, the supply capacitors must be placed as close as possible to the device pins (VDD and GND for the ground-tied supply, VB and VS for the floating supply) to minimize parasitic inductance and resistance.
3.2 Gate Drive Loop
Current loops behave like an antenna, able to receive and transmit noise. To reduce the noise coupling/ emission and improve the power switch turn-on and off performances, gate drive loops must be reduced as much as possible.
2. Under Voltage Lockout (UVLO)
The FAN7383 has an under-voltage lockout (UVLO) protection circuitry for high and low side channels to prevent malfunction when VDD or VBS is lower than the specified threshold voltage. The UVLO circuitry monitors the supply voltage (VDD) and bootstrap capacitor voltage (VBS) indepently.
3.3 Ground Plane
Ground plane must not be placed under or nearby the high-voltage floating side to minimize noise coupling.
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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14
FAN7383 Half-Bridge Gate-Drive IC
Package Dimensions
14-SOP
Dimensions are in millimeters unless otherwise noted.
MIN 1.55 0.10 0.061 0.004
0.05 0.002
#1
#14
8.70 MAX 0.343
8.56 0.20 0.337 0.008
#7
#8
6.00 0.30 0.236 0.012
1.80 MAX 0.071
+0.10 0.20 -0.05 +0.004 0.008 -0.002
3.95 0.20 0.156 0.008
5.72 0.225 0.60 0.20 0.024 0.008
0~ 8
January 2001, Rev. A
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
MAX0.10 MAX0.004
1.27 0.050
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15
+0.10 0.406 -0.05 +0.004 0.016 -0.002
(
0.47 ) 0.019
FAN7383 Half-Bridge Gate-Drive IC
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2006 Fairchild Semiconductor Corporation FAN7383 Rev. 1.0.0
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