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PD - 97262
IRF6641TRPBF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
RoHS Compliant l Lead-Free (Qualified up to 260C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
VDSS Qg
tot
VGS Qgd
9.5nC
RDS(on)
51m@ 10V
200V max 20V max 34nC
Vgs(th)
4.0V
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN
DirectFET ISOMETRIC
Description
The IRF6641PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
, Drain-to -Source On Resistance (m ) R DS(on)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
I D = 5.5A
g
e e f
h
12.0 I D = 5.5A
, Gate-to-Source Voltage (V) GS
200 20 4.6 3.7 26 37 46 11
A
mJ A
200 180 160 140 120 100 80 60 40 20 0 4 6 V GS, 8 10 12 14 16 T J = 25C T J = 125C
10.0 8.0 6.0 4.0 2.0 0.0 0 5
V DS = 160V V DS = 100V V DS = 40V
V
10
15
20
25
30
35
40
Gate -to -Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.77mH, RG = 25, IAS = 11A.
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10/02/06
IRF6641TRPBF
Electrical Characteristic @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
200 --- --- 3.0 --- --- --- --- --- 13 --- --- --- --- --- --- ---
---
Typ.
--- 0.23 51 4.0 -11 --- --- --- --- --- 34 8.7 1.9 9.5 14 11 12 1.0 16 11 31 6.5 2290 240 46 1780 100
Max.
--- --- 59.9 4.9 --- 20 250 100 -100 --- 48 --- --- 14 --- --- --- --- --- --- --- --- --- --- --- --- ---
Units
V V/C m V mV/C A nA S
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 5.5A i VDS = VGS, ID = 150A VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 5.5A VDS = 100V
nC
VGS = 10V ID = 5.5A See Fig. 15
nC
VDS = 16V, VGS = 0V VDD = 100V, VGS = 10V ID = 5.5A i
--- --- --- --- --- --- --- --- ---
ns
RG = 6.2 VGS = 0V
pF
VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 160V, f=1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) g Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 85 320 37 1.3 130 480 V ns nC
Min.
---
Typ.
---
Max.
26
Units
A
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 5.5A, VGS = 0V i TJ = 25C, IF = 5.5A, VDD = 100V di/dt = 100A/s c
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6641TRPBF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
100 D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
el jl kl fl
Parameter
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
Thermal Response ( Z thJA )
10
1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 A 4 A
Ri (C/W)
0.6784 17.299 17.566 9.4701
i (sec)
0.001268 0.033387 0.508924
0.1
1
2
3
4
Ci= i/Ri Ci= i/Ri
0.01 SINGLE PULSE ( THERMAL RESPONSE )
11.19309 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Mounted on minimum footprint full size board with metalized Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. R is measured at TJ of approximately 90C. Used double sided cooling, mounting pad with large heatsink.
Notes:
Surface mounted on 1 in. square Cu board (still air).
Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air)
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IRF6641TRPBF
100
TOP VGS 15V 10V 8.0V 7.0V
100
TOP VGS 15V 10V 8.0V 7.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
7.0V
BOTTOM
10
10
7.0V 1
60s PULSE WIDTH
Tj = 25C 1 0.1 1 VDS, Drain-to-Source Voltage (V) 10
0.1 0.1
60s PULSE WIDTH
Tj = 150C 1 V DS, Drain-to-Source Voltage (V)
10
Fig 4. Typical Output Characteristics
100
2.5
Fig 5. Typical Output Characteristics
ID = 5.5A
ID, Drain-to-Source Current (A)
Typical RDS(on) (Normalized)
VGS = 10V 2.0
10 T J = 150C T J = 25C T J = -40C 1 VDS = 10V 60s PULSE WIDTH 0.1 2 4 6 8 10 12 14 16
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = Cds + C gd
Fig 7. Normalized On-Resistance vs. Temperature
100 T J = 25C 90
Typical RDS(on) ( m)
10000
C, Capacitance (pF)
Ciss 1000 Coss
80 Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V
70
100
Crss
60
10 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
50 0 10 20 30 40 50 60
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current
4
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IRF6641TRPBF
100 T J = 150C T J = 25C T J = -40C 1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
100
10
10
1
100sec 10msec
1
0.1
VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.01 0
Tc = 25C Tj = 150C Single Pulse 1 10 100
1msec
1000
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) , Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
VDS, Drain-to-Source Voltage (V)
5
4
ID, Drain Current (A)
5.0
3
4.0 ID ID ID ID = 150A = 250A = 1.0mA = 1.0A
2
3.0
1
0 25 50 75 100 125 150 TA , Ambient Temperature (C)
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
200
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP
180 160 140 120 100 80 60 40 20 0 25 50 75
3.7A 5.7A BOTTOM 11A
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6641TRPBF
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 15b. Unclamped Inductive Waveforms
Fig 15a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
90%
D.U.T.
+
VDS
- VDD
10%
10V
Pulse Width 1 s Duty Factor 0.1 %
VGS
td(on) tr td(off) tf
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
6
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IRF6641TRPBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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IRF6641TRPBF
DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.676 0.080 0.17 IMPERIAL MAX 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.0274 0.0031 0.007
DirectFET Part Marking
8
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IRF6641TRPBF
DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
CODE A B C D E F G H
DIMENSIONS METRIC IMPERIAL MIN MIN MAX MAX 0.311 7.90 0.319 8.10 0.154 3.90 0.161 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6641TRPBF). For 1000 parts on 7" reel, order IRF6641TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION IMPERIAL METRIC METRIC CODE MIN MAX MIN MAX MAX MIN A 12.992 330.0 177.77 N.C N.C N.C B 0.795 20.2 19.06 N.C N.C N.C C 0.504 12.8 13.5 0.520 12.8 13.2 D 0.059 1.5 1.5 N.C N.C N.C E 3.937 100.0 58.72 N.C N.C N.C F N.C N.C N.C 0.724 18.4 13.50 G 0.488 12.4 11.9 0.567 14.4 12.01 H 0.469 11.9 11.9 0.606 15.4 12.01 (QTY 1000) IMPERIAL MAX MIN N.C 6.9 0.75 N.C 0.53 0.50 0.059 N.C 2.31 N.C N.C 0.53 0.47 N.C 0.47 N.C
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/06
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