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| Advanced Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 100N25P IXTK 100N25P IXTT 100N25P VDSS = 250 V ID25 = 100 A RDS(on) = 27 m TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 TO-268 TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 600 -55 ... +150 150 -55 ... +150 300 W C C C C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 250 250 20 100 75 250 60 60 2.0 10 V V V A A A A mJ J V/ns G S G D S D = Drain, TAB = Drain (TAB) G = Gate, S = Source, TO-268 (IXTT) D (TAB) TO-264(SP) (IXTK) G D S D (TAB) D = Drain TAB = Drain 1.13/10 Nm/lb.in. 5.5 10 5 g g g G = Gate S = Source Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 250 2.5 5.0 100 25 250 27 V V nA A A m VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99118B(07/04) (c) 2004 IXYS All rights reserved IXTQ 100N25P IXTT 100N25P IXTK 100N25P TO-3P Outline Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 56 6300 VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 240 25 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 3.3 (External) 26 100 28 185 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 43 91 0.21 TO-3P TO-264 0.21 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W 1 2 3 gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 100 250 1.5 200 3.0 A A V ns C TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V TO-264 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTQ 100N25P IXTT 100N25P IXTK 100N25P Fig. 1. Output Characteristics @ 25C 100 90 80 70 VGS = 10V 9V 8V 250 225 200 175 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 5V 6V 7V ID - Amperes 150 125 100 75 50 25 0 0 2 4 6 8 10 12 8V 7V 6V 14 16 18 20 V DS - Volts Fig. 3. Output Characteristics @ 125C 100 90 80 VGS = 10V 9V 8V 2.8 2.6 2.4 VGS = 10V V DS - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature ID - Amperes 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 5V 6V 7V RDS(on) - Normalized 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 I D = 100A I D = 50A V DS - Volts Fig. 5. RDS(on) Norm alized to 3.4 3.1 2.8 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 110 100 90 80 0.5 ID25 Value vs. ID VGS = 10V RDS(on) - Normalized 2.2 1.9 1.6 1.3 1 0.7 0 25 50 75 TJ = 25C ID - Amperes 2.5 TJ = 125C 70 60 50 40 30 20 10 0 ID - Amperes 100 125 150 175 200 225 250 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved IXTQ 100N25P IXTT 100N25P IXTK 100N25P Fig. 7. Input Adm ittance 150 90 80 125 70 100 60 50 40 30 20 10 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 0 25 50 75 100 125 150 175 200 TJ = -40C 25C 125C Fig. 8. Transconductance ID - Amperes 75 50 25 TJ = 125C 25C -40C V GS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 300 10 9 250 200 8 7 VDS = 125V I D = 50A I G = 10mA gfs - Siemens ID - Amperes Fig. 10. Gate Charge IS - Amperes VG S - Volts TJ = 125C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 6 5 4 3 2 1 150 100 50 0 0 V SD - Volts 0 20 40 60 80 100 120 140 160 180 200 QG - nanoCoulombs Fig. 12. Forw ard-Bias Safe Ope rating Area 1000 R DS(on) Limit TJ = 150C TC = 25C 100s 1ms 10ms 10 DC 25s Fig. 11. Capacitance 10000 Capacitance - picoFarads C iss ID - Amperes 100 1000 C oss f = 1MHz C rss 100 0 5 10 15 1 20 25 30 35 40 10 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. V DS - Volts V DS - Volts IXTQ 100N25P IXTT 100N25P IXTK 100N25P Fig. 13. Maxim um Transient Therm al Resistance 1.00 R(th)JC - C/W 0.10 0.01 1 10 100 1000 Pulse Width - milliseconds (c) 2004 IXYS All rights reserved |
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