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Ordering number : ENN8000
MCH6627
MCH6627
Features
*
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
* *
The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 20 1.4 5.6 0.8 150 --55 to +150 P-channel -30 20 --1.0 --4.0 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.7A ID=0.7A, VGS=10V ID=0.4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 30 1 10 1.2 0.6 1.1 230 400 65 14 8 5 4 11 3 300 560 2.6 V A A V S m m pF pF pF ns ns ns ns Symbol Conditions Ratings min typ max Unit
Marking : WB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2504 TS IM TB-00000453 No.8000-1/6
MCH6627
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=-1mA VDS=--10V, ID=-500mA ID=--500mA, VGS=-10V ID=--300mA, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--1A VDS=--10V, VGS=-10V, ID=--1A VDS=--10V, VGS=-10V, ID=--1A IS=--1A, VGS=0 --1.2 0.4 0.8 420 720 75 16 9 6 4 12 4 2.6 0.5 0.5 --0.89 --1.5 550 1000 --30 --1 10 --2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 Ratings min typ 2.5 0.6 0.3 0.87 1.2 max Unit nC nC nC V
Package Dimensions unit : mm 2173A
0.25
Electrical Connection
6 0.3 4
2.1 1.6
5
4
0.15
5
6
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
Top view
0.25
32 0.65 2.0
0.07
1
6
5
4
(Bottom view)
0.85
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
1
2
3
1
2
3
(Top view)
Switching Time Test Circuit
[N-channel]
VIN 10V 0V VIN ID=700mA RL=21.4 VOUT VDD=15V 0V --10V VIN ID= --500mA RL=30 VOUT
[P-channel]
VIN VDD= --15V
D
PW=10s D.C.1%
D
PW=10s D.C.1%
G
MCH6627 P.G 50
G
MCH6627 P.G 50
S
S
No.8000-2/6
MCH6627
VDS=10V
25C 75 25 C C
3.5 4.0 IT03295 2.0
ID -- VDS
V
6V 5V
[Nch]
1.4
ID -- VGS
Ta= -0 0.5 1.0 1.5 2.0 2.5
[Nch]
10
8V
4V
Drain Current, ID -- A
1.2
Drain Current, ID -- A
1.5
1.0
0.8
1.0
VGS=3V
0.5
0.6
0.2 0 0 0.2 0.4 0.6 0.8 1.0 IT03294 0
25
3.0
Drain-to-Source Voltage, VDS -- V
800
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
800
[Nch] Ta=25C
RDS(on) -- Ta
75 C C --25 C
0.4
Ta =
[Nch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 2 3 4 5 6 7 8 9 10 IT03296
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 --60
ID=0.4A
0.7A
0.4A I D=
=4V , VGS
=10V , VGS
.7A I D=0
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
yfs -- ID
Ambient Temperature, Ta -- C
5 3 2
IT03297
Forward Transfer Admittance, yfs -- S
[Nch] VDS=10V
IF -- VSD
[Nch] VGS=0
2
Forward Current, IF -- A
1.0 7 5
25
C
1.0 7 5 3 2 0.1 7 5 3 2
= Ta
75
C
--2 5C
3 2
0.1 0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT03299
Drain Current, ID -- A
5 3
IT03298
SW Time -- ID
[Nch] VDD=15V VGS=10V
100 7 5
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
Ta=75 C 25C --25C
[Nch] f=1MHz
Switching Time, SW Time -- ns
2
Ciss, Coss, Crss -- pF
td(off)
10 7 5 3 2
3 2
td(on)
Coss
10
tr
tf
Crss
7 5 3
1.0 5 7 0.1 2 3 5 7 1.0 2 3
0
5
10
15
20
25
30 IT03301
Drain Current, ID -- A
IT03300
Drain-to-Source Voltage, VDS -- V
No.8000-3/6
MCH6627
10
VGS -- Qg
VDS=10V ID=1.4A
[Nch]
10 7 5 3 2
ASO
IDP=5.6A
[Nch] <10s 10 0 1m s s
10
Gate-to-Source Voltage, VGS -- V
8
Drain Current, ID -- A
ID=1.4A
6
1.0 7 5 3 2 0.1 7 5 3 2
4
s op era Operation in this tio n area is limited by RDS(on).
DC
10
ms
0m
2
0 0 0.5 1.0 1.5 2.0 2.5 IT03302
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 5
Total Gate Charge, Qg -- nC
--2.0
ID -- VDS
--1 0
Drain-to-Source Voltage, VDS -- V
--1.4
IT04072
[Pch]
ID -- VGS
[Pch]
--
6V
Drain Current, ID -- A
Drain Current, ID -- A
--1.5
--8V
V --5
VDS= --10V
--1.2
V
--4V
--1.0
--0.8
--1.0
--0.6
--0.5
--0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0 --0.5 --1.0 --1.5
--2.0
5C 25 --2 C 5C
--2.5 --3.0
VGS= --3V
--0.4
Ta= 7
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
1400
IT03310
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
1200
IT03311
[Pch] Ta=25C
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
1200
Static Drain-to-Source On-State Resistance, RDS(on) -- m
1000
1000
ID= --0.3A
--0.5A
800
-I D=
, VG 0.3A
--4V S=
800
600
600
400
--10 V S= 0.5A, G I D= --
V
400
200 0 --1
200
--2
--3
--4
--5
--6
--7
--8
--9
--10
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
yfs -- ID
IT03312
Ambient Temperature, Ta -- C
5 3 2
IT03313
[Pch] VDS= --10V
IF -- VSD
[Pch] VGS=0
Forward Transfer Admittance, yfs -- S
2
Forward Current, IF -- A
1.0 7 5
25
C
--1.0 7 5 3 2 --0.1 7 5 3 2
= Ta
5 --2
C
75
C
3 2
0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Drain Current, ID -- A
IT03314
Diode Forward Voltage, VSD -- V
Ta=75 C 25C --25C
IT03315
No.8000-4/6
MCH6627
100 7
SW Time -- ID
VDD= --15V VGS= --10V
[Pch]
100 7 5
Ciss, Coss, Crss -- VDS
Ciss
[Pch] f=1MHz
Switching Time, SW Time -- ns
5
2
td(off)
10 7 5 3 2
Ciss, Coss, Crss -- pF
3
3 2
td(on)
tf
Coss
10 7
tr
Crss
1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3
5 0 --5 --10 --15 --20 --25 --30 IT03317
Drain Current, ID -- A
--10
IT03316
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
7 5 3 2
[Pch]
ASO
[Pch] <10s 10 0 1m s s
10
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1.0A
--8
IDP= --4A
Drain Current, ID -- A
--6
--1.0 7 5 3 2 --0.1 7 5 3 2
ID= --1A
DC
10
ms
op
0m
era
s
tio
n
--4
Operation in this area is limited by RDS(on).
--2
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT03318
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT04070
[Nch, Pch]
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
0.6
on
ac
er
am
ic
bo
0.4
ar
d(
90
0m
0.2
m2 !0
.8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT04071
No.8000-5/6
MCH6627
Note on usage : Since the MCH6627 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice.
PS No.8000-6/6

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