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NTGS3433T1 MOSFET -3.3 Amps, -12 Volts
P-Channel TSOP-6
Features
* Ultra Low RDS(on) * Higher Efficiency Extending Battery Life * Miniature TSOP-6 Surface Mount Package
Applications
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* Power Management in Portable and Battery-Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25C unless otherwise noted.)
Rating Symbol VDSS VGS Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Maximum Operating Power Dissipation Maximum Operating Drain Current Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Maximum Operating Power Dissipation Maximum Operating Drain Current
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds
1 Mounted onto a 2 square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), t t 5.0 seconds. 2 Mounted onto a 2 square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), operating to steady state.
m o .c U t4 e e h S ta a .D w w w
-12 V 75 m @ VGS = -4.5 V P-Channel 1256 Value -12 "8.0 62.5 2.0 -3.3 Unit Volts Volts DRAIN RJA Pd ID IDM Pd ID C/W Watts Amps Amps Watts Amps C/W Watts 3 GATE -20 1.0 -2.35 128 1.0 4 SOURCE RJA Pd ID IDM Pd ID -2.35 -14 0.5 -1.65 Amps Amps Watts Amps C C 1 TSOP-6 CASE 318G STYLE 1 433 x TJ, Tstg TL -55 to 150 260 = Device Code = Date Code
VDSS
RDS(ON) TYP
ID MAX -3.3 A
MARKING DIAGRAM
433 x
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Device
NTGS3433T1
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
1
April, 2004 - Rev. 1
om .c 4U et he aS at .D w w w
1 2 3
Drain Drain Gate
ORDERING INFORMATION
Package TSOP-6
Shipping
3000 Tape & Reel
Publication Order Number: NTGS3433T1/D
NTGS3433T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Notes 3 & 4)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = -10 mA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -8 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -8 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = -8.0 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Static Drain-Source On-State Resistance (VGS = -4.5 Vdc, ID = -3.3 Adc) (VGS = -2.5 Vdc, ID = -2.9 Adc) Forward Transconductance (VDS = -10 Vdc, ID = -3.3 Adc) DYNAMIC CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage Diode Forward On-Voltage (IS = -1.7 Adc, VGS = 0 Vdc) (IS = -3.3 Adc, VGS = 0 Vdc) VSD VSD - - -0.80 -0.90 -1.5 - Vdc Vdc (IS = -1.7 Adc, dlS/dt = 100 A/ms) (VDD = -10 Vdc, ID = -1.0 Adc, 10 1.0 VGS = -4.5 Vdc, Rg = 6.0 W) td(on) tr td(off) tf trr - - - - - 20 20 110 100 30 30 30 120 115 - ns ns (VDS = -5.0 Vdc, VGS = 0 Vdc, 5 0 Vd Vd f = 1.0 MHz) (VDS = -10 Vdc, VGS = -4.5 Vd 10 Vd 4 5 Vdc, ID = -3.3 Adc) Qtot Qgs Qgd Ciss Coss Crss - - - - - - 7.0 2.0 3.5 550 450 200 15 - - - - - pF nC VGS(th) -0.50 RDS(on) - - gFS - 7.0 - 0.055 0.075 0.075 0.095 mhos -0.70 -1.50 W Vdc V(BR)DSS -12 IDSS - - IGSS - IGSS - - 100 - -100 nAdc - - -1.0 -5.0 nAdc - - mAdc Vdc Symbol Min Typ Max Unit
3. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 4. Class 1 ESD rated - Handling precautions to protect against electrostatic discharge is mandatory.
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NTGS3433T1
12 -ID, DRAIN CURRENT (AMPS) 10 8 6 4 TJ = 25C 2 VGS = -1.5 V 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) VGS = -5 V VGS = -2.5 V VGS = -3 V VGS = -3.5 V VGS = -4 V VGS = -4.5 V VGS = -2 V 20 18 16 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = 125C VDS -10 V TJ = -55C TJ = 25C
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 2 4 6 8 ID = -3.3 A TJ = 25C
0.3 TJ = 25C 0.25 0.2 0.15 0.1 VGS = -4.5 V 0.05 0 VGS = -2.5 V
0
2
4
6
8
10
12
14
16
18
20
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
-ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
1.6 ID = -3.3 A VGS = -4.5 V
1200 1000 C, CAPACITANCE (pF) 800 600 400 200 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Ciss VGS = 0 V TJ = 25C
1.4
1.2
1
Coss Crss 0 2.5 5 7.5 10 12.5 15 17.5 20
0.8
0.6 -50
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Capacitance Variation
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NTGS3433T1
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 -IS, SOURCE CURRENT (AMPS) 5 4 3 Qgs 2 1 0 Qgd TJ = 25C ID = -3.3 A 0 2 4 6 8 10 10 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 TJ = 25C TJ = 150C VGS = 0 V
QT
Qg, TOTAL GATE CHARGE (nC)
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5
Figure 8. Diode Forward Voltage vs. Current
0.2 0.1 0.1 0.05 0.02 0.01 0.1 1E-04 1E-03 Single Pulse 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03
SQUARE WAVE PULSE DURATION (sec)
Figure 9. Normalized Thermal Transient Impedance, Junction-to-Ambient
20 16 POWER (W)
12
8
4 0 0.01
0.10
1.00 TIME (sec)
10.00
100.00
Figure 10. Single Pulse Power
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NTGS3433T1
PACKAGE DIMENSIONS
TSOP-6 CASE 318G-02 ISSUE L
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 STYLE 1: PIN 1. 2. 3. 4. 5. 6. DRAIN DRAIN GATE SOURCE DRAIN DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
A L
6 5 1 2 4 3
S
B
D G M 0.05 (0.002) H C K J
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.075
0.95 0.037 0.95 0.037
0.7 0.028 1.0 0.039
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTGS3433T1
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NTGS3433T1/D

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