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ZX3CDBS1M832
MPPSTM Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL
SUMMARY NPN Transistor Schottky Diode DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination provides users with highly efficient performance in applications including DC-DC and charging circuits. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count
3mm x 2mm Dual Die MLP
VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV (@1A); IC=1A
C
Cathode
FEATURES
* Extremely Low Saturation Voltage (150mV @1A) * HFE characterised up to 6A * IC = 4.5A Continuous Collector Current * Extremely Low VF, fast switching Schottky * 3mm x 2mm MLP
B
E
Anode
APPLICATIONS
* DC - DC Converters * Mobile Phones * Charging Circuits * Motor control
PINOUT
ORDERING INFORMATION
DEVICE ZX3CDBS1M832TA ZX3CDBS1M832TC REEL 7 13 TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000
3mm x 2mm Dual MLP underside view
DEVICE MARKING
BS1 ISSUE 1 - JUNE 2002 1
ZX3CDBS1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Transistor Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a)(f) Continuous Collector Current (b)(f) Base Current Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Storage Temperature Range Junction Temperature V CBO V CEO V EBO I CM IC IC IB PD PD PD PD PD PD T stg Tj 40 20 7.5 12 4.5 5 1000 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 150 V V V A A A mA W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C C SYMBOL VALUE UNIT
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)
Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.
SYMBOL R JA R JA R JA R JA R JA R JA
VALUE 83 51 125 111 73.5 41.7
UNIT C/W C/W C/W C/W C/W C/W
ISSUE 1 - JUNE 2002 2
ZX3CDBS1M832
TRANSISTOR TYPICAL CHARACTERISTICS
3.5
Max Power Dissipation (W)
IC Collector Current (A)
10
VCE(SAT) Limited
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
1oz Cu Note (d)(f)
2oz Cu Note (e)(g)
Tamb=25C
1
DC 1s 100ms 10ms Note (a)(f) Single Pulse, Tamb=25C 1ms 100us
2oz Cu Note (a)(f) 1oz Cu Note (d)(g)
0.1
0.01 0.1
1
10
25
50
75
100
125
150
VCE Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
Thermal Resistance (C/W) Thermal Resistance (C/W)
80 60
D=0.5 Note (a)(f)
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
1oz copper Note (f) 1oz copper Note (g)
40 20
D=0.2 Single Pulse D=0.05 D=0.1
2oz copper Note (f) 2oz copper Note (g)
0 100 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
Tamb=25C 2oz copper Note (g)
Thermal Resistance v Board Area
PD Dissipation (W)
3.0 Tj max=150C 2.5 2.0 1.5 1.0 0.5 0.0 0.1
Continuous 2oz copper Note (f)
1oz copper Note (f)
1oz copper Note (g)
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002 3
ZX3CDBS1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Schottky Diode Continuous Reverse Voltage Forward Voltage @ I F =1000mA(typ) Forward Current Average Peak Forward Current D=50% Non Repetitive Forward Current t 100 s t 10ms Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Storage Temperature Range Junction Temperature VR VF IF I FAV I FSM PD PD PD PD PD PD T stg Tj 40 425 1850 3 12 7 1.2 12 2 20 0.8 8 0.9 9 1.36 13.6 2.4 24 -55 to +150 125 V A mA A A A W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C C SYMBOL VALUE UNIT
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)
Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 400mW.
SYMBOL R JA R JA R JA R JA R JA R JA
VALUE 83 51 125 111 73.5 41.7
UNIT C/W C/W C/W C/W C/W C/W
ISSUE 1 - JUNE 2002 4
ZX3CDBS1M832
SCHOTTKY TYPICAL CHARACTERISTICS
3.0
Thermal Resistance (C/W)
80 60
Max Power Dissipation (W)
Note (a)(f)
2.5 2.0 1.5 1.0 0.5 0.0 0
1oz Cu Note (d)(f)
2oz Cu Note (e)(g)
Tamb=25C
D=0.5
2oz Cu Note (a)(f) 1oz Cu Note (d)(g)
40 20
D=0.2 Single Pulse D=0.05 D=0.1
0 100 1m
10m 100m
1
10
100
1k
25
50
75
100
125
Pulse Width (s)
Temperature (C)
Transient Thermal Impedance
3.0
Tamb=25C 2.5 Tj max=125C Continuous 2oz copper Note (g)
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
Thermal Resistance (C/W)
PD Dissipation (W)
1oz copper Note (f) 1oz copper Note (g)
2.0 1.5 1.0 0.5 0.0 0.1 1
1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f)
2oz copper Note (f) 2oz copper Note (g)
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ISSUE 1 - JUNE 2002 5
ZX3CDBS1M832
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. TRANSISTOR ELECTRICAL CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 8 90 115 190 210 0.98 0.88 200 300 200 100 100 400 450 360 180 140 23 170 400 30 MHz pF ns ns 40 20 7.5 100 27 8.2 25 25 25 15 150 135 250 270 -1.05 -0.95 V V V nA nA nA mV mV mV mV mV V V I C =100 A I C =10mA* I E =100 A V CB =32V V EB =6V V CES =16V I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =2A, I B =50mA* I C =3A, I B =100mA* I C =4.5A, I B =125mA* I C =4.5A, I B =125mA* I C =4.5A, V CE =2V* I C =10mA, V CE =2V* I C =0.2A, V CE =2V* I C =2A, V CE =2V* I C =6A, V CE =2V* I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz V CC =10V, I C =3A I B1 =I B2 =10mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off) V (BR)R VF
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Reverse Breakdown Voltage Forward Voltage 40 60 240 265 305 355 390 425 495 420 50 25 12 270 290 340 400 450 500 600 -- 100 V mV mV mV mV mV mV mV mV A pF ns I R =300 A I F =50mA* I F =100mA* I F =250mA* I F =500mA* I F =750mA* I F =1000mA* I F =1500mA* I F=1000mA,Ta=100C* V R =30V f=1MHz,V R =25V switched from IF = 500mA to I R = 500mA Measured at IR = 50mA
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD t rr
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002 6
ZX3CDBS1M832
TRANSISTOR TYPICAL CHARACTERISTICS
0.25
Tamb=25C IC/IB=50
100m
0.20
100C
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=100
0.15
25C
10m
IC/IB=50 IC/IB=10
0.10
-55C
0.05 1 10 0.00 1m 10m 100m 1 10
1m 1m
IC Collector Current (A)
10m
100m
VCE(SAT) v IC
IC Collector Current (A)
VCE(SAT) v IC
630
VCE=2V
1.2
540 450 360 270
1.0 0.8
IC/IB=50
Normalised Gain
1.0 0.8 0.6 0.4 0.2 0.0 1m
Typical Gain (hFE)
100C 25C
VBE(SAT) (V)
-55C
0.6 0.4 1m
25C 100C
-55C
180 90
10m
100m
1
10
0
IC Collector Current (A)
hFE v IC
IC Collector Current (A)
10m
100m
1
10
VBE(SAT) v IC
1.0 0.8
VCE=2V
VBE(ON) (V)
-55C
0.6
25C
0.4 1m 10m
100C
IC Collector Current (A)
100m
1
10
VBE(ON) v IC
ISSUE 1 - JUNE 2002 7
ZX3CDBS1M832
SCHOTTKY TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2002 8
ZX3CDBS1M832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES DIM A A1 A2 A3 b b1 D D2 D3 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETRES MIN. MAX. INCHES MIN. MAX.
0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 12
0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005
3.00 BSC 0.82 1.01 1.02 1.21
0.118 BSC 0.032 0.0397 0.040 0.0476
0.0029 BSC 0 12
(c) Zetex plc 2002
Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to
www.zetex.com
ISSUE 1 - JUNE 2002 9

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