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| Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm s Features q q q q 2.10.1 0.425 1.250.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.00.2 1.30.1 0.65 3 2 0.2 0.90.1 (Ta=25C) Ratings 15 8 2 80 150 150 -55 ~ +150 Unit V V V mA mW C C 0 to 0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 0.70.1 s Absolute Maximum Ratings 0.20.1 1:Base 2:Emitter 3:Collector EIAJ:SC-70 S-Mini Type Package Marking symbol : HT s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Noise figure Foward transfer gain (Ta=25C) Symbol ICBO IEBO hFE fT NF | S21e |2 *1 Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 5V, IC = 10mA VCB = 5V, IE = 0, f = 1MHz VCE = 5V, IC = 10mA, f = 2GHz VCE = 5V, IC = 3mA, f = 1GHz VCE = 5V, IC = 10mA, f = 1GHz min typ max 1 1 0.15-0.05 +0.1 0.3-0 +0.1 Unit A A 80 0.6 7 1.6 8.5 11 200 1 pF GHz 2 dB dB Cob *1h FE Rank classification Q 80 ~ 115 R 95 ~ 155 S 135 ~ 200 Rank hFE 1 Transistor PC -- Ta 200 120 Ta=25C 100 2SC5378 IC -- VCE 180 VCE=5V hFE -- IC Collector power dissipation PC (mW) Forward current transfer ratio hFE Collector current IC (mA) 160 150 Ta=75C 120 25C 90 -25C 80 IB=600A 500A 120 60 400A 300A 80 40 200A 20 60 40 100A 30 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 1 3 10 30 100 300 1000 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) 2 |
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