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| HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No 00 History Initial Draft Date Apr. 6. 2003 Remark Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /Apr. 2003 Hynix Semiconductor HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM DESCRIPTION The HY62LF16206B is a high speed, super low power and 2Mbit full CMOS SRAM organized as 128K words by 16bits. The HY62LF16206B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage No. (V) HY62LF16206B 2.3~2.7 Notes : 1. Current value is max. Speed (ns) 120 FEATURES * Fully static operation and Tri-state output * TTL compatible inputs and outputs * Battery backup(L-part) -. 1.2V(min) data retention * Standard pin configuration -. 48-TSOP1 Operation Current/Icc(mA) 1 Standby Current(uA) D 20 Temperature (C) 0~70 PIN CONNECTION A15 A14 A13 A12 A11 A10 A9 A8 NC NC /WE CS2 NC /UB /LB NC NC A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC VSS IO16 IO8 IO15 IO7 IO14 IO6 IO13 IO5 VCC IO12 IO4 IO11 IO3 IO10 IO2 IO9 IO1 /OE VSS /CS1 A0 BLOCK DIAGRAM A0 ROW DECODER SENSE AMP ADD INPUT BUFFER I/O1 COLUMNDECODER DATA I/O BUFFER MEMORY ARRAY 128K x 16 WRITE DRIVER A16 I/O16 48-TSOP1(Forward) /CS1 CS2 /OE /LB /UB /WE CONTRO L LOGIC PIN CONNECTION Pin Name /CS1 CS2 /WE /OE /LB /UB Pin Function Chip Select 1 Chip Select 2 Write Enable Output Enable Lower Byte Control(I/O1~I/O8) Upper Byte Control(I/O9~I/O16) Pin Name I/O1~I/O16 A0~A16 Vcc Vss NC Pin Function Data Inputs / Outputs Address Inputs Power(2.3V~2.7V) Ground No Connection This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /Apr. 2003 Hynix Semiconductor HY62LF16206B-DT12C ORDERING INFORMATION Part No. HY62LF16206B-DT12C Speed 120 Power D-part Temp. 0 ~ 70 Package 48-TSOP1 ABSOLUTE MAXIMUM RATINGS (1) Symbol VIN, VOUT Vcc TA TSTG PD TSOLDER Parameter Input/Output Voltage Power Supply Operating Temperature Storage Temperature Power Dissipation Ball Soldering Temperature & Time Rating -0.3 to 3.3 -0.3 to 3.3 0 to 70 -40 to 125 1.0 260 * 10 Unit V V C C W C*se c Remark Note : 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. TRUTH TABLE /CS1 H X X L L L CS2 X L X H H H /WE X X X H H H /OE X X X H H L /LB X X H L X L H L L H L /UB X X H X L H L L H L L Mode Deselected Output Disabled Read I/O1~I/O8 High-Z High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN I/O I/O9~I/O16 High-Z High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Power Standby Active L H L X Write Note: 1. H=VIH, L=VIL, X=don't care(Vil or Vih) 2. UB, LB(Upper, Lower Byte enable) These active LOW inputs allow individual bytes to be written or read. When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8. When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16. Rev.00 /Apr. 2003 2 HY62LF16206B-DT12C RECOMMENDED DC OPERATING CONDITION Symbol Parameter Min. Vcc Supply Voltage 2.3 Vss Ground 0 VIH Input High Voltage 2.0 VIL Input Low Voltage -0.3(1) Note : 1. VIL = -1.5V for pulse width less than 30ns Typ. 2.5 0 Max. 2.7 0 Vcc+0.3 0.4 Unit V V V V DC ELECTRICAL CHARACTERISTICS Vcc = 2.3V~2.7V, TA = 0C to 70C Symbol Parameter ILI Input Leakage Current ILO Output Leakage Current Icc ICC1 Operating Power Supply Current Average Operating Current Test Condition Vss < VIN < Vcc Vss < VOUT < Vcc, /CS1 = VIH or CS2= VIL, /OE = VIH or /WE = VIL, or /UB = /LB = VIH /CS1 = VIL, CS2 = VIH, VIN = VIH or VIL, II/O = 0mA Cycle Time=Min.100% duty, /CS1 = 0.2V, CS2 = Vcc-0.2V, /WE = Vcc-0.2V, II/O = 0mA Other Inputs = Vcc-0.2V/0.2V Cycle time = 1us, /CS1 < 0.2V, CS2Vcc-0.2V, VIN<0.2V or VinVcc-0.2V, II/O = 0mA /CS1 = VIH, CS2 = VIL /UB = /LB = VIH, VIN = VIH or VIL /CS1 > Vcc - 0.2V or CS2 < Vss+0.2V or /UB = /LB > Vcc - 0.2V, VIN > Vcc - 0.2V or VIN < Vss + 0.2V IOL = 1.0mA IOH = -0.5mA Min. -1 -1 - Typ. - Max. 1 1 1 5 Unit uA uA mA mA - - 2 mA ISB ISB1 Standby Current (TTL Input) Standby Current (CMOS Input) - - 0.3 20 mA uA VOL Output Low Voltage VOH Output High Voltage Notes : 1. Typical values are at Vcc = 2.5V, TA = 25C 2. Typical values are sampled and not 100% tested 1.8 - 0.4 - V V CAPACITANCE (Temp = 25C, f= 1.0MHz) Symbol Parameter Condition CIN Input Capacitance(Add, /CS, /WE, /OE) VIN = 0V COUT Output Capacitance(I/O) VI/O = 0V Note : 1. These parameters are sampled and not 100% tested Max. 10 10 Unit pF pF Rev.00 /Apr. 2003 3 HY62LF16206B-DT12C AC CHARACTERISTICS Vcc = 2.3V~2.7V, TA = 0C to 70C, unless otherwise specified # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Symbol Parameter -12 Min. Max. 120 10 5 10 0 0 0 10 120 100 100 100 0 85 0 0 60 0 10 120 120 80 120 45 45 45 35 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns READ CYCLE tRC Read Cycle Time tAA Address Access Time tACS Chip Select Access Time tOE Output Enable to Output Valid tBA /LB, /UB Access Time tCLZ Chip Select to Output in Low Z tOLZ Output Enable to Output in Low Z tBLZ /LB, /UB Enable to Output in Low Z tCHZ Chip Deselection to Output in High Z tOHZ Out Disable to Output in High Z tBHZ /LB, /UB Disable to Output in High Z tOH Output Hold from Address Change WRITE CYCLE tWC Write Cycle Time tCW Chip Selection to End of Write tAW Address Valid to End of Write tBW /LB, /UB Valid to End of Write tAS Address Set-up Time tWP Write Pulse Width tWR Write Recovery Time tWHZ Write to Output in High Z tDW Data to Write Time Overlap tDH Data Hold from Write Time tOW Output Active from End of Write AC TEST CONDITIONS TA = 0C to 70C, unless otherwise specified Parameter Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Level Output Load tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW Others Value 0.4V to 2.2V 5ns 1.1V CL = 5pF + 1TTL Load CL = 30pF + 1TTL Load AC TEST LOADS TTL CL(1) Note : 1. Including jig and scope capacitance Rev.00 /Apr. 2003 4 HY62LF16206B-DT12C TIMING DIAGRAM READ CYCLE 1(Note 1,4) tRC ADDR tAA /CS1 tACS tOH CS2 tCHZ(3) tBA /UB ,/ LB tBHZ(3) /OE tOLZ(3) tBLZ(3) Data Valid tOE tOHZ(3) Data Out High-Z tCLZ(3) READ CYCLE 2(Note 2,3,4) tRC ADDR tAA tOH Data Out Previous Data Data Valid tOH READ CYCLE 3(Note 1,2,4) /CS1 /UB, /LB CS2 tACS tCLZ(3) Data Out Data Valid tCHZ(3) Notes: 1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS1, a high CS2 and low /UB and/or /LB. 2. /OE = VIL 3. Transition is measured + 200mV from steady state voltage. This parameter is sampled and not 100% tested. 4. /CS1 in high for the standby, low for active. CS2 in low for the standby, high for active. /UB and /LB in high for the standby, low for active Rev.00 /Apr. 2003 5 HY62LF16206B-DT12C WRITE CYCLE 1 (1,4,8) (/WE Controlled) ADDR tCW /CS1 tW R(2) tW C CS2 tAW tBW /UB,/LB tW P /W E tAS Data In High-Z tW HZ(3,7) Data O ut tDW Data Valid tO W (5) (6) tDH WRITE CYCLE 2 (1,4,8) (/CS1, CS2 Controlled) ADDR tAS /CS1 tW C tCW tW R(2) tAW CS2 tBW /UB,/LB tW P /W E tDW Data In High-Z Data Valid tDH Data Out High-Z Notes: 1. A write occurs during the overlap of a low /WE, a low /CS1, a high CS2 and low /UB and/or /LB. 2. tWR is measured from the earlier of /CS, /LB, /UB, or /WE going high or CS2 going low to the end of write cycle. 3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be applied. 4. If the /CS1, /LB and /UB low transition with CS2 high transition occur simultaneously with the /WE low transition or after the /WE transition, outputs remain in a high impedance state. 5. Q(data out) is the same phase with the write data of this write cycle. 6. Q(data out) is the read data of the next address. 7. Transition is measured 200mV from steady state. This parameter is sampled and not 100% tested. 8. /CS1 in high for the standby, low for active. CS2 in low for the standby, high for active. /UB and /LB in high for the standby, low for active Rev.00 /Apr. 2003 6 HY62LF16206B-DT12C DATA RETENTION ELECTRIC CHARACTERISTIC TA = 0C to 70C Symbol Parameter VDR Vcc for Data Retention ICCDR Data Retention Current Test Condition /CS1 > Vcc - 0.2V or CS2 < Vss+0.2V or /UB = /LB > Vcc-0.2V, VIN > Vcc - 0.2V or VIN < Vss + 0.2V Vcc=1.5V, /CS1 > Vcc - 0.2V, CS2 < Vss+0.2V, /UB = /LB > Vcc-0.2V or VIN > Vcc - 0.2V or VIN < Vss + 0.2V See Data Retention Timing Diagram Min. 1.2 Typ. Max. 2.7 20 Unit V uA tCDR tR Notes: 1. Typical values are under the condition of TA = 25C. 2. Typical Values are sampled and not 100% tested 3. tRC is read cycle time. Chip Deselect to Data Retention Time Operating Recovery Time 0 tRC(3) - - ns ns DATA RETENTION TIMING DIAGRAM 1 VCC 2.3V tCDR DATA RETENTION MODE tR VIH VDR CS1>VCC-0.2V /CS1 VSS DATA RETENTION TIMING DIAGRAM 2 VCC 2.3V tCDR CS2 VDR DATA RETENTION MODE tR 0.4V VSS CS2<0.2V Rev.00 /Apr. 2003 7 HY62LF16206B-DT12C PACKAGE INFORMATION 48pin Thin Small Outline Package Forward #1 #48 UNIT : mm 12.0 0.1 0.22 0.05 #24 #25 0.5 BSC 0.145 16.4 0.1 18.0 0.2 1.2(max) 0.8 0.2 0~10 Rev.00 /Apr. 2003 8 HY62LF16206B-DT12C MARKING INSTRUCTION Top Side Package h y Y y n 6 w i 2 w Marking Example x L p F 1 6 2 0 K 6 D O B T 1 2 C R E A TSOP-I (Forward) H y Index * hynix * KOREA * HY62LF16206B HY 62 L F 16 20 6 B * yy * ww *p *D *T * 12 *C : Hynix Logo : Origin Country : Part Name : HYNIX : Product Group : Operating Voltage : Tech. + Classification : Organization : Density : Mode : Version : Slow SRAM : 2.5V(2.3V ~ 2.7V) : Full CMOS : x16 : 2M : 2CS with /UB,/LB;tCS : 3rd Generation : Year ( ex : 03 = year 2003, 04 = year 2004 ) : Work Week ( ex : 12 = ww12 ) : Process Code -A : 12mm X 18mm : Power Consumption : Package Type : Speed : Temperature : Low Low Power : TSOP-I : 120ns : Commercial ( 0 ~ 70 C ) Note - Capital Letter - Small Letter : Fixed Item : Non-fixed Item Rev.00 /Apr. 2003 9 HY62LF16206B-DT12C - Bottom Side Package TSOP-I (Forward) Marking Example x x x x x x x x Index * xxxxxxxx Note - Capital Letter - Small Letter : FAB Run No. : Fixed Item : Non-fixed Item Rev.00 /Apr. 2003 10 |
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