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INTEGRATED CIRCUITS
DATA SHEET
OQ2545HP; OQ2545BHP SDH/SONET STM16/OC48 laser drivers
Product specification Supersedes data of 1997 Nov 27 File under Integrated Circuits, IC19 1999 Aug 24
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
FEATURES * Differential 50 inputs for direct connection to Current-Mode Logic (CML) outputs * Internal retiming to minimize jitter (OQ2545HP only) * Input clock phase margin of 320 at 2.5 Gbits/s (OQ2545HP only) * RF output current sinking capability of 60 mA * Bias output current sinking capability of 100 mA * TTL compatible control inputs * Loop mode for system testing * Continuous output monitoring * Power dissipation <1500 mW (for typical application) * Low cost LQFP48 plastic package. APPLICATIONS * Digital fibre optical modulation driver in STM16/OC48 short, medium and long haul optical transmission systems * Optical modulation driver in high-speed data networks * High current driver for electro-optical converters * High current electrical line driver. ORDERING INFORMATION TYPE NUMBER OQ2545HP OQ2545BHP PACKAGE NAME LQFP48 DESCRIPTION
OQ2545HP; OQ2545BHP
GENERAL DESCRIPTION The OQ2545 is a driver IC intended to be used with a directly modulated laser diode or with an Electro Absorption Modulator (EAM) in SDH/SONET 2.5 Gbits/s optical transmission systems. The IC features differential data inputs. Loop mode inputs are provided for system testing, along with an output for continuous monitoring. In addition, the OQ2545HP features differential clock inputs for internal retiming resulting in a better jitter performance. The IC has bias and modulating current outputs, the levels of which can be set separately. As an additional safety measure, the active HIGH-level input for automatic laser shutdown (pin ALS) can be used to switch off the laser modulation and bias currents. Although the IC is intended for 2.5 Gbits/s optical transmission systems, it can be used in any application requiring high current drive at high frequencies. The IC is transparent from input to output.
VERSION SOT313-2
plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
1999 Aug 24
2
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
BLOCK DIAGRAMS
OQ2545HP; OQ2545BHP
handbook, full pagewidth
DIOA
3 33 34 22
DIGITAL SECTION
ANALOG SECTION
40 39
MON MONQ IBIAS
DIN DINQ DLOOP DLOOPQ
MONITOR BUFFER
10
19
21
OQ2545HP
FF PREAMPLIFIER EMITTER FOLLOWERS
SIBIAS
CIN CINQ CLOOP CLOOPQ
30 31 28 27
MODULATION DRIVER
5, 6 7, 8
LA LAQ
18 SIMOD BAND GAP REFERENCE 43 BGCAP 45 ENL 17 SMOD 42 VEE1 16 AMPADJ 15 EFADJ 44 ALS
(1) (2)
46
MGK368
8 VEE2
14 GND VCC
(1) Pins 1, 12, 13, 24, 25, 36, 37 and 48. (2) Pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47.
Fig.1 Block diagram of OQ2545HP.
1999 Aug 24
3
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
handbook, full pagewidth
DIOA
3 33 34 22
DIGITAL SECTION
ANALOG SECTION
40 39
MON MONQ IBIAS
DIN DINQ DLOOP DLOOPQ
MONITOR BUFFER
10
19
21
OQ2545BHP
FF PREAMPLIFIER EMITTER FOLLOWERS
SIBIAS
i.c. i.c. i.c. i.c.
30 31 28 27
MODULATION DRIVER
5, 6 7, 8
LA LAQ
18 SIMOD BAND GAP REFERENCE 43 BGCAP 45 ENL 17 SMOD 42 VEE1 16 AMPADJ 15 EFADJ 44 ALS
(1) (2)
46
MGL727
8 VEE2
14 GND VCC
(1) Pins 1, 12, 13, 24, 25, 36, 37 and 48. (2) Pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47.
Fig.2 Block diagram of OQ2545BHP.
1999 Aug 24
4
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
PINNING PIN SYMBOL OQ2545HP VEE2 GND DIOA GND LA LA LAQ LAQ GND IBIAS GND VEE2 VEE2 GND EFADJ AMPADJ SMOD SIMOD SIBIAS GND DLOOPQ DLOOP GND VEE2 VEE2 GND CLOOPQ i.c. CLOOP i.c. GND CIN i.c. CINQ i.c. GND DIN DINQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 - 28 - 29 30 - 31 - 32 33 34 OQ2545BHP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 - 27 - 28 29 - 30 - 31 32 33 34 S S A S O O O O S O S S S S AI AI I I I S I I S S S S I - I - S I - I - S I I TYPE(1)
OQ2545HP; OQ2545BHP
DESCRIPTION supply voltage for analog section (-6.5 V) ground supply temperature sensing diode array connection ground supply laser modulation current output laser modulation current output inverted laser modulation current output inverted laser modulation current output ground supply laser bias current control output ground supply supply voltage for analog section (-6.5 V) supply voltage for analog section (-6.5 V) ground supply input for emitter follower current adjustment input for preamplifier current adjustment input for data polarity switch input for RF modulated output current control input for DC output current control ground supply inverted loop mode data input loop mode data input ground supply supply voltage for analog section (-6.5 V) supply voltage for analog section (-6.5 V) ground supply inverted loop mode clock input internally connected; internal resistance of 50 to GND loop mode clock input internally connected; internal resistance of 50 to GND ground supply clock input internally connected; internal resistance of 50 to GND inverted clock input internally connected; internal resistance of 50 to GND ground supply data input inverted data input
1999 Aug 24
5
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
PIN SYMBOL OQ2545HP GND VEE2 VEE2 GND MONQ MON GND VEE1 BGCAP ALS ENL VCC GND VEE2 Note 35 36 37 38 39 40 41 42 43 44 45 46 47 48 OQ2545BHP 35 36 37 38 39 40 41 42 43 44 45 46 47 48
TYPE(1) S S S S O O S S A I I S S S ground supply
DESCRIPTION
supply voltage for analog section (-6.5 V) supply voltage for analog section (-6.5 V) ground supply inverted monitor data output monitor data output ground supply supply voltage for digital section (-4.5 V) connection for band gap reference decoupling capacitor automatic laser shutdown control input loop mode enable input (active LOW) positive supply voltage for TTL interface (+5 V) ground supply supply voltage for analog section (-6.5 V)
1. Pin type abbreviations: O = output, I = input, S = power supply and A = analog function.
43 BGCAP
42 VEE1
48 VEE2
37 VEE2
40 MON
38 GND
41 GND
handbook, full pagewidth
39 MONQ
46 VCC
47 GND
45 ENL
44 ALS
VEE2
1
36 VEE2 35 GND 34 DINQ 33 DIN 32 GND
GND 2 DIOA 3 GND 4 LA 5 LA 6 LAQ 7 LAQ 8 GND 9 IBIAS 10 GND 11 VEE2 12 DLOOPQ 21 VEE2 24
OQ2545HP
31 CINQ 30 CIN 29 GND 28 CLOOP 27 CLOOPQ 26 GND 25 VEE2
AMPADJ 16
DLOOP 22
VEE2 13
GND 14
EFADJ 15
SMOD 17
SIMOD 18
SIBIAS 19
GND 20
GND 23
MGK367
Fig.3 Pin configuration of OQ2545HP.
1999 Aug 24
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
43 BGCAP
42 VEE1
48 VEE2
37 VEE2
40 MON
38 GND
41 GND
handbook, full pagewidth
39 MONQ
46 VCC
47 GND
45 ENL
44 ALS
VEE2
1
36 VEE2 35 GND 34 DINQ 33 DIN 32 GND
GND 2 DIOA 3 GND 4 LA 5 LA 6 LAQ 7 LAQ 8 GND 9 IBIAS 10 GND 11 VEE2 12 DLOOPQ 21 VEE2 24
OQ2545BHP
31 i.c. 30 i.c. 29 GND 28 i.c. 27 i.c. 26 GND 25 VEE2
AMPADJ 16
DLOOP 22
VEE2 13
GND 14
EFADJ 15
SMOD 17
SIMOD 18
SIBIAS 19
GND 20
GND 23
MGL728
Fig.4 Pin configuration of OQ2545BHP.
1999 Aug 24
7
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
FUNCTIONAL DESCRIPTION The OQ2545(B)HP can be divided into two functional blocks (see Fig.1): * A digital section on the input side * An analog section on the output side. The data input buffers present an impedance of 50 to the data stream on the differential data inputs (see Fig.5). The input data is then fed to a multiplexer where normal mode (pin ENL = HIGH-level) or loop mode (pin ENL = LOW-level) inputs are selected. For driving an EAM, a second multiplexer inverts the input signals when pin SMOD is connected to VEE1. An external clock (OQ2545HP only) connected to a master-slave flip-flop is then used to retime the data. This reduces jitter on the data signal to a minimum. The preamplifier boosts the signal to a suitable level for the modulation driver. Two emitter followers provide the necessary signal isolation between the preamplifier and the high current modulation driver. The bias currents for the preamplifier and the emitter followers contain an output level dependent component, along with an independent component. The output level dependent component is controlled via the signal on pin SIMOD and the operational amplifier, which also sets the modulation driver level. The independent component is adjusted by means of the signal on pin AMPADJ (preamplifier) and pin EFADJ (emitter followers).
OQ2545HP; OQ2545BHP
The signal on pin AMPADJ also controls the shape of the output signal on pins LA and LAQ. An independent adjustable on-chip bias current source is provided to drive directly a modulated laser diode. Pin SIBIAS is used to set the bias current level. The output current at pin IBIAS will be approximately 106 times the input current at pin SIBIAS. A similar arrangement is used to control the modulation current at pins LA and LAQ. The output current at pins LA and LAQ is proportional to the input current at pin SIMOD. The coefficient depends on the load impedance on pins LA and LAQ and on the voltage setting of pin SMOD (see section `Modulation current setting'). Pin ALS is a TTL compatible input and at HIGH-level it can be used to switch off all current sources. This function makes it possible to implement safety measures that will switch off the circuit in the event of an optical system malfunction. The buffered differential 50 outputs (pins MON and MONQ) can be used to monitor the optically modulated data. Loop mode The loop mode is provided for system testing. A LOW-level on pin ENL selects the loop mode. When pin ENL is left open-circuit, it is pulled to a HIGH-level (TTL) by an internal pull-up resistor.
handbook, full pagewidth
50 DIN, DLOOP CIN, CLOOP
50 DINQ, DLOOPQ, CINQ, CLOOPQ
VEE1
MGL731
Fig.5 Schematic for CML differential inputs.
1999 Aug 24
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
Automatic laser shutdown A HIGH-level (TTL) on pin ALS switches off the laser modulation and bias currents. This function allows the circuit to be switched off in the event of an optical system malfunction or for system maintenance. When not connected, pin ALS is pulled to a LOW-level (TTL) by an internal pull-down resistor. Data monitoring Pins MON and MONQ can be used as data monitor outputs. They need to be AC-coupled, e.g. to a 50 matched RF amplifier with sufficient bandwidth. Output polarity selection Pin SMOD is used to set the correct logic assignment between the data input on pins DIN and DINQ (or pins DLOOP and DLOOPQ) and the data output on pins LA, LAQ, MON and MONQ. This is necessary because a directly modulated laser diode and an EAM have different output voltage requirements. If a laser diode is used and connected between pin LA and ground, a high current through pin LA corresponds to a logic HIGH, while a low current through pin LA corresponds to a logic LOW.
OQ2545HP; OQ2545BHP
The opposite is the case with an EAM, where a high current (i.e. a large voltage across the load) activates the EAM, thereby causing a logic LOW. Therefore, an inversion is needed between input and output. This happens in the second multiplexer when pin SMOD is connected to VEE1. When left open-circuit, pin SMOD is pulled-up to ground, which is the laser diode setting. Modulation current setting Pin SIMOD is used to adjust the modulation current on pins LA and LAQ (see Fig.6). This is achieved by regulating the internal current mirror, which serves as a reference current for the modulation driver. The reference port of the control operational amplifier is connected to ground through an internal 4 k resistor, thus establishing a `virtual earth' on pin SIMOD (DC level is 0 V). An external (approximately) 4 k resistor connected to an adjustable voltage source is needed to regulate the internal current mirror. This adjustable voltage source can be a part of the laser current control box (see Fig.15). The ratio between the current into pin SIMOD and the total modulation current depends on the polarity setting via pin SMOD. When pin SMOD = 0 V the value of Imod = 92 x ISIMOD (approximately) and whereas pin SMOD = VEE1 the value of Imod = 107 x ISIMOD (approximately).
handbook, full pagewidth
4 k ISIMOD SIMOD
100
100 LA LAQ
+
-
k x ISIMOD VEE2
71 x k x ISIMOD(1)
MGL733
(1) k = 1.3 when pin SMOD = 0 V. k = 1.5 when pin SMOD = VEE1.
Fig.6 Schematic of laser modulation outputs.
1999 Aug 24
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
Due to the internal resistors of 100 between pins LA and LAQ to GND, a part of the total modulation current Imod flows internally (see Fig.7). Therefore the modulation current can be written as: Imod = ILA(int) + ILA(ext). I LA ( int ) R LA The ratio is: ----------------- = --------- where RLA is the external I LA ( ext ) 100 impedance between pins LA and GND. A similar argument holds for pin LAQ, with an external impedance of RLAQ.
OQ2545HP; OQ2545BHP
Preamplifier bias current adjustment The bias current for the preamplifier contains a modulation dependent component and a modulation independent component. The modulation dependent current is adjusted via pin SIMOD. The modulation independent current will be adequate under normal circumstances. However, in some applications it may be necessary to customize the shape of the modulation current. This can be done by adjusting the preamplifier bias current via pin AMPADJ. When this pin is left open-circuit, the bias current is 0.5 mA and when this pin is connected to ground, the maximum bias current will be approximately 2.5 mA. A resistor can be connected between pin AMPADJ and ground to adjust the current level within this range. The bias current can be decreased by connecting a resistor between pins AMPADJ and VEE2. However, care should be taken as the preamplifier will not be able to drive the modulation driver when the bias current is too low. Emitter follower bias current adjustment The bias currents for the emitter followers contain two components: a modulation independent component and a modulation dependent component to be controlled via pin SIMOD. The modulation independent currents (8.2 and 16.4 mA, respectively) are sufficient to ensure the emitter followers operate correctly under normal circumstances. In some applications, however, the eye pattern needs to be optimized. This is achieved by connecting an external resistor between pin EFADJ and ground. When pin EFADJ is connected directly to ground, the maximum currents for the two emitter followers will be approximately 25 and 50 mA, respectively. Because the emitter followers buffer the signal from the preamplifier, the current range to be adjusted via pin EFADJ depends on the setting via pin AMPADJ. Grounding and power supply decoupling The ground connection on the PCB needs to be a large copper area fill connected to a common ground plane with as low inductance as possible. The large area fill will improve the heat transfer to the PCB and so aiding cooling of the IC. The power supply pins need to be decoupled using chip capacitors mounted as close as possible to the IC. To avoid high frequency resonance, multiple bypass capacitors should not be mounted at the same location. To minimise low frequency switching noise in the vicinity of the IC, the power supply line should ideally be filtered once using an LC circuit with a low cut-off frequency.
GND 100 100 ILA(int) LA ILA(ext) LAQ + - RLA RLAQ
Imod
OQ2545
MGL734
Fig.7 Total modulation current Imod.
Bias current setting An independent adjustable on-chip bias current source is provided for when the IC is driving directly a modulated laser diode. Pin SIBIAS is used to adjust the bias current at pin IBIAS, in a similar arrangement to that used for adjusting the modulation current. The reference port of the control operational amplifier is connected to ground through an internal 4 k resistor, thus establishing a `virtual earth' on pin SIBIAS (DC-level of 0 V). An adjustable voltage source connected to pin SIBIAS through an (approximately) 4 k resistor is used to regulate the internal current mirror. The maximum output current of 100 mA is achieved with an input voltage of 4 V. In this case, the input current at pin SIBIAS is approximately 1 mA. Band gap decoupling capacitor The band gap voltage on pin BGCAP should be decoupled to VEE1 with an external 10 nF capacitor to minimize noise. It cannot be used as an external reference voltage for other circuits.
1999 Aug 24
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
RF connections A coupled stripline or microstrip with an odd mode characteristic impedance of 50 (nominal value) should be used for the differential RF connections on the PCB. This applies to the CML differential line pairs on pins CIN and CINQ, DIN and DINQ, CLOOP and CLOOPQ, DLOOP and DLOOPQ, and MON and MONQ. In addition, the following lines should not differ in length by more than 10 mm: * Lines to pins DIN, DINQ, CIN and CINQ * Lines to pins CLOOP, CLOOPQ, DLOOP and DLOOPQ. ESD protection In order to achieve high frequency performance, it has been necessary to make adjustments to the standard ESD protection scheme. Inputs on pins DIN, DINQ, CIN, CINQ, DLOOP, DLOOPQ, CLOOP and CLOOPQ and outputs on pins MON and MONQ are protected by a reduced ESD structure. The outputs on pins LA and LAQ have no protection against ESD, so extra care should be taken with these pins. Power consumption The total power consumption of the OQ2545(B)HP depends strongly on the application. A rough guideline is given to estimate the power consumption for a specific application. The total power dissipation (Ptot) consists of the following terms: Ptot = PVEE1 + PVCC + PVEE2 - (PLA + PLAQ + PIBIAS) where 1. PVEE1 and PVCC represent the power consumption terms corresponding with the supplies VEE1 and VCC, required for the digital section and the TTL interfaces. These 2 terms are application independent and only depend on the process spread and supply voltages. Values can be found in Chapter "Characteristics". 2. PVEE2 = IEE2 x VEE2 represents the power consumption of the analog section, including the modulation current and bias current. It is mainly determined by the magnitude of the modulation current and bias current and the additional biasing currents of the preamplifier and emitter followers. The supply current is the summation: IEE2 = 55 mA + 1.5 x Imod + IIBIAS + 3 x IAMPADJ + 55 x IEFADJ
OQ2545HP; OQ2545BHP
where IAMPADJ and IEFADJ are the currents through pins AMPADJ and EFADJ, respectively. These figures are valid for nominal supply voltage and temperature and are given for rough indication only.
3. PLA, PLAQ and PIBIAS represent the dissipation in the external load (laser or EAM), caused by the modulation and bias current. The expressions are: PLA = 0.5 x ILA(ext) x VLA, PLAQ = 0.5 x ILAQ(ext) x VLAQ and PIBIAS = IIBIAS x VIBIAS. The factor 0.5 represents the fact that, for a (scrambled) random data pattern, the modulation switch will be switched to either side 50% of the time integrated over many cycles. VLA and VLAQ are the voltages on pins LA and LAQ when the modulation current flows through pins LA and LAQ, respectively and the values depend on the external laser or EAM supply voltage, the forward diode voltage drop and additional loads. To increase the dissipation in the external load and thereby decreasing the dissipation in the IC, the values of VLA or VLAQ can be increased by adding additional external resistors. A minimum value of VLA and VLAQ is required for proper operation of the IC. A similar argument is valid for power consumption due to the bias current. It should be noted that this is important, because it provides an easy way to lower the power dissipation of the IC. Example Consider the following example to illustrate the calculation of Ptot. A laser diode operates at 0.3 mW (optical low) and 3 mW (optical high), i.e. an extinction ratio of 10 dB. For this laser type this requires IBIAS = 20 mA and ILA(ext) = 40 mA (see Fig.8). The series resistance of the laser is 30 . Therefore the I LA ( int ) 30 ratio is: ----------------- = --------I LA ( ext ) 100 Consequently, a total Imod = (130/100) x 40 = 52 mA will be generated by the IC. The impedance connected to pin LAQ is 30 as well. As a result also ILAQ(ext) = 40 mA and ILAQ(int) = 12 mA (see Fig.9). In first instance the eye pattern is of adequate quality and the preamplifier and emitter follower do not need additional bias current, i.e. pins AMPADJ and EFADJ can be left open-circuit.
1999 Aug 24
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
The current IBIAS is supplied through an RF choke with a high RF resistance and a low DC resistance (e.g. 5 ). When the laser is in the high (emitting) state, the voltage drop across the diode and the modulation current of 40 mA in combination with the bias current of 20 mA through the 30 laser resistance results in: VLA = -1.2 - 30 x (0.040 + 0.020) = -3.0 V No current through the 30 resistor gives VLAQ = 0 V. When the laser is in the low (dark) state, the bias current of 20 mA results in VLA = -1.2 - 30 x 0.020 = -1.8 V The modulation current of 40 mA through the 30 resistor sets the value VLAQ = 30 x 0.040 = -1.2 V The RF choke causes VIBIAS to be stationary and equal to the average value of VLA minus the small voltage drop across the choke (bias current of 20 mA through 5 ): VIBIAS = 0.5 x (-3.0 - 1.8) - 0.020 x 5 = -2.5 V Table 1 PVEE1 PVCC PVEE2 PLA PLAQ PIBIAS Ptot Note 1. 153 mA = IEE2 (55 + 1.5 x 52 + 20 + 3 x 0 + 55 x 0). Estimate total power consumption 70 mA x 4.5 V 2 mA x 5 V 153 mA(1) x 6.5 V 0.5 x 40 mA x 3.0 V 0.5 x 40 mA x 1.2 V 20 mA x 2.5 V PVEE1 + PVCC + PVEE2 - (PLA + PLAQ + PIBIAS) 315 mW 10 mW 995 mW 60 mW 24 mW 50 mW 1186 mW
OQ2545HP; OQ2545BHP
Thermal requirements and cooling The maximum allowed junction temperature for normal operation is 125 C. With an application specific estimated power dissipation and the maximum ambient temperature, the required thermal resistance from junction to ambient Rth(j-a) can be derived. This value strongly depends on the PCB layout for the IC. It is highly recommended to use copper area fills around the 8 corner leads (pins VEE2) of the IC. If a single copper layer PCB with a copper thickness of 0.034 mm is used, square copper area fills of 10 x 10 mm around the corner leads will result in an approximate value for Rth(j-a) = 35 K/W. This value originates from model calculations and is for indication only. Lower values for Rth(j-a) can be obtained with multilayer PCBs. If the required power dissipation is not known, but the maximum ambient temperature is fixed, the maximum allowed dissipation as a function of Rth(j-a) can be derived, 125 - T amb ( max namely: P tot = -----------------------------------------) R th ( j - a ) The maximum allowed dissipation to prevent overheating as a function of the thermal resistance that is achieved in the application is shown in Fig.12. The maximum ambient temperature in this application is 85 C (i.e. 125 - 85 = 40 C temperature head room). A low Rth(j-a) is recommended.
handbook, full pagewidth
GND 100 100 ILA(int) LA ILA(ext) IBIAS EMI choke Imod Ibias
MGL736
30 LAQ
1.2 V 30 laser IBIAS
OQ2545
VEE2
Fig.8 Laser high `light emitting'.
1999 Aug 24
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
handbook, full pagewidth
GND 100 100 ILAQ(int) 30 LAQ ILAQ(ext) LA IBIAS IBIAS EMI choke Imod Ibias
MGL735
1.2 V 30 laser
OQ2545
VEE2
Fig.9 Laser low `dark'.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC VEE1 VEE2 Vn PARAMETER supply voltage for TTL interface supply voltage for digital section supply voltage for analog section DC voltage on pins DIN, DINQ, DLOOP, DLOOPQ, CIN, CINQ, CLOOP and CLOOP pins MON and MONQ pins ALS and ENL pins EFADJ, APADJ, SIMOD and SIBIAS pins SMOD and BGCAP In DC current on pins LA and LAQ pin IBIAS pins MON and MONQ pin DIOA Tj Tstg junction temperature storage temperature - - - - - -65 80 110 20 10 150 +150 mA mA mA mA C C -1.0 -2.0 -0.5 VEE2 - 0.5 VEE1 - 0.5 +0.5 +0.5 VCC + 0.5 0.5 0.5 V V V V V MIN. -0.5 -6.0 -7.5 MAX. +6.0 +0.5 +0.5 V V V UNIT
THERMAL CHARACTERISTICS SYMBOL Rth(j-s) PARAMETER thermal resistance from junction to solder point VALUE 27 UNIT K/W
1999 Aug 24
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
CHARACTERISTICS Measured at typical supply voltages; all outputs with 50 load; Tamb = -40 to +85 C. SYMBOL Supplies VCC VEE1 VEE2 ICC IEE1 IEE2 P supply voltage for TTL interface supply voltage for digital section supply voltage for analog section supply current for TTL interface supply current for digital section supply current for analog section power dissipation OQ2545HP OQ2545BHP normal operation; note 1 laser shutdown 4.75 -4.75 -6.85 - - - - - 5.0 -4.5 -6.5 2 70 50 275 5 1984 350 - - 250 0 -200 50 5.25 -4.25 -6.15 3 90 70 - 8 - - +85 125 V V V mA mA mA mA mA mW mW C C mV mV mV V V A A V V A A ms - - - MHz dB V/s PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
maximum bias and - modulation current; note 2 laser shutdown - -40 - 100 -25 -600 single-ended 40 - 2.4 -500 0 - 2.4 -90 0 note 5 - - - - - - - 14
Tamb Tj Vi(p-p) VIO VI Zi VIL VIH IIL IIH VIL VIH IIL IIH tres bias mod
ambient temperature junction temperature
CML data and clock inputs: pins DIN, DINQ, DLOOP, DLOOPQ, CIN, CINQ, CLOOP and CLOOPQ; note 3 input voltage (peak-to-peak value) input offset voltage DC input voltage input impedance 500 +25 +250 60
TTL input: pin ENL; note 4 LOW-level input voltage HIGH-level input voltage LOW-level input current HIGH-level input current 0.4 4.0 - - 0.4 4.0 - - - 120 92 106 10 1 4 0.8 - 0 250
TTL input: pin ALS; note 4 LOW-level input voltage HIGH-level input voltage LOW-level input current HIGH-level input current response time 0.8 - 0 600 1.5 - - - - 6 -
Current source control inputs: pins SIMOD and SIBIAS; note 6 bias current converter coefficient modulation current converter coefficient note 7 note 8 diode (SMOD = 0 V) EAM (SMOD = VEE1) B G SR bandwidth of unity gain amplifier gain peaking slew rate note 9 note 10
1999 Aug 24
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
SYMBOL
PARAMETER
CONDITIONS - - note 11
MIN. - -
TYP.
MAX.
UNIT
Preamplifier adjustment: pin AMPADJ II II VBGCAP VDIOA IOL IOH IO(off) VO tr tf Jo(p-p) Zo BR input control current 3 mA
Emitter follower adjustment: pin EFADJ input control current 3 -1.25 2.5 mA
Band gap decoupling connection: pin BGCAP band gap decoupling voltage -2.05 1.6 -1.6 2.0 - - - - 50 155 160 15 100 V
Temperature diodes: pin DIOA temperature diode voltage note 12 V
Laser modulation outputs: pins LA and LAQ; note 13 LOW-level output current HIGH-level output current output current during laser shutdown output voltage duty factor rise time fall time output jitter (peak-to-peak value) output impedance bit rate single-ended note 17 note 15 note 16 note 16 note 14 5 - - -3.5 43 - - - 80 - 1 - note 19 -5.5 70 - single-ended 40 - 100 100 180 60 2 200 0 57 200 200 40 120 mA mA A V % ps ps ps Gbits/s
2.48832 - - - - 115 -1.4 50 100 200 0
Bias current output: pin IBIAS IO IO(off) VO Vo(p-p) VO Zo Tcy(CIN) tsu th m Notes 1. Value is based on: a) External modulation current of 60 mA through an external load of 33 and an internal modulation current of 20 mA giving a total modulation current of 80 mA. b) Bias current is 100 mA. c) Pins AMPADJ and EFADJ are left open-circuit. output current output current during laser shutdown output voltage note 18 mA A V
Monitor outputs: pins MON and MONQ output voltage (peak-to-peak value) DC output voltage output impedance 160 - 60 - - - - mV V ps ps ps deg
Clock phase margin: pins CIN and CINQ (OQ2545HP only); see Fig.13 CIN cycle time set-up time hold time clock phase margin 402 20 20 320
1999 Aug 24
15
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
2. Value based on:
OQ2545HP; OQ2545BHP
a) External modulation current of 60 mA and internal modulation current of 20 mA giving a total modulation current of 80 mA. b) Bias current is 100 mA; see Section "Power consumption" for details on application specific power dissipation. c) Pins AMPADJ and EFADJ are left open-circuit. d) Pins LA and LAQ both terminated with 33 . 3. See Fig.10 for CML symbol definitions. All CML inputs are terminated internally using 50 on-chip resistors to ground. 4. Since the TTL inputs are static, no timing specifications are given in this data sheet. 5. The response time is the time it takes the laser currents (ILA and IIBIAS) to fall below 1 mA after pin ALS = HIGH-level. 6. The values are valid for capacitive loads of up to 50 pF connected to these input pins; voltage controlled with 3.9 k source resistance. 7. I IBIAS bias = ----------------I SIBIAS I mod mod = ----------------- where Imod is the total (internal + external) modulation current. I SIMOD
8.
9. The current converters consist of operational amplifiers used as unity gain amplifiers and current mirrors. The specified characteristics apply for the transfer function from pin SIMOD to pins LA and LAQ or from pin SIBIAS to pin IBIAS. 10. Although the operational amplifiers are configured as unity gain amplifiers, the response tends to peak close to the roll-off area. 11. To suppress supply noise in the band gap, an external capacitor of 10 nF can be connected between this pin and VEE1. 12. Three series connected diodes have been integrated for measuring the junction temperature. The anode of this diode array is connected to pin DIOA. The cathode is connected internally to VEE2. With a current of 1 mA, the anode voltage (measured with reference to VEE2) will be somewhere within the specified range, depending on temperature. This voltage will show a -6 mV/C gradient over temperature. 13. Values are measured electrically and unfiltered (see Fig.11): a) Pins AMPADJ and EFADJ are left open-circuit for all measurements. b) The external load is 33 on pins LA and LAQ. c) The external modulation current is 60 mA. d) Optical rise and fall times, duty factor and jitter depend on the applied filtering and the matching network between pins LA and LAQ and the optical device used. 14. The currents flowing into pins LA and LAQ are not equal to the internal RF modulation current because of an additional current in the internal termination resistance. t WH 15. Duty factor is defined as -------- x 100% The data stream should be `010101010101...' T cy 16. Rise and fall times are between 10% and 90% of the peak values. 17. All RF tests are done at 2.48832 Gbits/s (STM16/OC48 rate). 18. The DC current into pin IBIAS is not equal to the internal DC current because of an additional current from the internal termination resistors. 19. To avoid saturation of the current source on pin IBIAS, the voltage level on pin IBIAS should never be allowed to fall below the specified minimum. 1999 Aug 24 16
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
handbook, full pagewidth
CML INPUT VI(max) GND
Vi(p-p) VIO VI(min)
MGL730
Fig.10 Logic level symbol definitions for CML inputs.
handbook, halfpage
4
MBK077
Ptot (W) 3 LA, LAQ 50 coax 100 100 tester interface 50 1 2
OQ2545
OSCILLOSCOPE
MGL737
0 10 20 30 R th(j-a) (K/W) 40
Measured at Tamb = 85 C.
Fig.11 Set-up for electrical measurement of RF parameters.
Fig.12 Maximum power dissipation as a function of the thermal resistance.
1999 Aug 24
17
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
TIMING CHARACTERISTICS Input timing (OQ2545HP only)
OQ2545HP; OQ2545BHP
Set-up and hold time definitions are illustrated in Fig.13. The timing characteristics are applicable in both normal and loop modes.
handbook, full pagewidth
Tcy(CIN)
CIN
50%
DIN
80 mV
MGK369
tsu
th
valid data
Fig.13 CML input timing (OQ2545HP only).
Output timing
handbook, full pagewidth
Tcy tWH tf 90% LA 50% 10% tr
MGK370
Jo(p-p)
Fig.14 Modulation output timing.
1999 Aug 24
18
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
APPLICATION INFORMATION
OQ2545HP; OQ2545BHP
handbook, full pagewidth
LASER DIODE
optical fibre optical monitor output
25 LAQ CIN 30 CINQ MUX 31 DIN 33 DINQ 34 7, 8
COMPENSATION NETWORK LA 5, 6 IBIAS 10 3 46
(1)
LASER CURRENT CONTROL Vbias DIOA VCC VEE2 VEE1 GND 14 8 Vmod
0 to 4 V +5 V -6.5 V -4.5 V
(OQ2535)
42
(2)
CLOOP 28 CLOOPQ DCR 27 DLOOP 22 DLOOPQ 21 AMPADJ 16 EFADJ 15 40 MON electrical monitor output RF AMP 39 MONQ 44 ALS 45 ENL 17
OQ2545HP
SIBIAS 19 SIMOD 18 3 to 4 k 3 to 4 k
(OQ2541)
43
BGCAP 10 nF
MGK371
SMOD
from main controller module
(1) All VEE2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) All GND pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the PCB ground plane.
Fig.15 Application schematic OQ2545HP with laser diode.
1999 Aug 24
19
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
handbook, full pagewidth
LASER DIODE
optical fibre optical monitor output
25 LAQ i.c. i.c. MUX 7, 8 30 31 33 DINQ 34
COMPENSATION NETWORK LA 5, 6 IBIAS 10 3 46
(1)
LASER CURRENT CONTROL Vbias DIOA VCC VEE2 VEE1 GND 14 8 Vmod
0 to 4 V +5 V -6.5 V -4.5 V
(OQ2535)
DIN
42
(2)
i.c. i.c. DCR
28 27 22
OQ2545BHP
SIBIAS 19 SIMOD 18 3 to 4 k 3 to 4 k
(OQ2541)
DLOOP DLOOPQ 21 AMPADJ 16 EFADJ 15 40 MON 39 MONQ 44 ALS 45 ENL 17 43
BGCAP 10 nF
MGL729
SMOD
electrical monitor output
RF AMP
from main controller module
(1) All VEE2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) All GND pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the PCB ground plane.
Fig.16 Application schematic OQ2545BHP with laser diode.
1999 Aug 24
20
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
handbook, full pagewidth
optical monitor output LASER DIODE BIAS CURRENT CONTROL 50 LAQ CIN 30 CINQ MUX 31 DIN 33 DINQ 34 7, 8
EAM
optical fibre
LA 5, 6 10
IBIAS DIOA VCC VEE2 VEE1 GND 14 SIBIAS SIMOD 3 to 4 k 18 Vref BGCAP 10 nF SMOD
MGK372
3 46
(1)
(OQ2535)
+5 V 8 -6.5 V -4.5 V
42 CLOOP CLOOPQ DCR 28 27 22 21 16 EFADJ 15 40 MON electrical monitor output RF AMP 39 MONQ 44 ALS 45 ENL 17 43 19
OQ2545HP
(2)
(OQ2541)
DLOOP DLOOPQ AMPADJ
from main controller module
(1) All VEE2 pins (pins 1, 12, 13, 24, 25, 36, 37 and 48) must connected together. (2) All GND pins (pins 2, 4, 9, 11, 14, 20, 23, 26, 29, 32, 35, 38, 41 and 47) must be connected directly to the PCB ground plane.
Fig.17 Application schematic OQ2545HP with Electro Absorption Modulator (EAM).
1999 Aug 24
21
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
PACKAGE OUTLINE
OQ2545HP; OQ2545BHP
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
SOT313-2
c
y X
36 37
25 24 ZE
A
e
E HE
A A2
A1
(A 3) Lp L detail X
wM pin 1 index 48 1 12 ZD bp D HD wM B vM B vM A 13 bp
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.60 A1 0.20 0.05 A2 1.45 1.35 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 7.1 6.9 E (1) 7.1 6.9 e 0.5 HD 9.15 8.85 HE 9.15 8.85 L 1.0 Lp 0.75 0.45 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o
o
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT313-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 94-12-19 97-08-01
1999 Aug 24
22
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
OQ2545HP; OQ2545BHP
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1999 Aug 24
23
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
OQ2545HP; OQ2545BHP
Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, SQFP PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. not suitable suitable(2) recommended(3)(4) recommended(5) suitable not not suitable suitable suitable suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not REFLOW(1)
1999 Aug 24
24
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
NOTES
OQ2545HP; OQ2545BHP
1999 Aug 24
25
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
NOTES
OQ2545HP; OQ2545BHP
1999 Aug 24
26
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 laser drivers
NOTES
OQ2545HP; OQ2545BHP
1999 Aug 24
27
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465012/100/02/pp28
Date of release: 1999
Aug 24
Document order number:
9397 750 05482

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