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| SI3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS = -4.5 V 1.30 @ VGS = -3.0 V ID (A) "1.2 "1.0 "0.85 "0.75 P-Channel -20 S2 TSOP-6 Top View G1 D G2 1 6 S1 D D 2 5 G2 3 4 S2 G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation p (Surface M (S f Mounted on FR4 B d) td Board) Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "1.2 "0.95 "3.5 1 1.25 0.8 P-Channel -20 "12 "0.85 "0.65 "2.5 -1 Unit V A W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec) Symbol RthJA N- or P- Channel 100 Unit _C/W For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70778 S-55457--Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-1 SI3850DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G Vl DiC Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = -20 V, VGS = 0 V, TJ = 70_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 0.5 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -4.5 V, ID = -0.5 A VGS = 3.0 V, ID = 0.5 A VGS = -3.0 V, ID = -0.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 1.2 A VDS = -10 V, ID = -0.85 A IS = 1 A, VGS = 0 V IS = -1 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 3.0 -2.0 0.38 0.70 0.55 1.10 2.7 1.2 1.2 -1.2 0.500 1.00 0.750 1.30 S W N-Ch P-Ch 0.6 -0.6 "100 1 -1 10 -10 A A mA V nA Symbol Test Condition Min Typ Max Unit V Dynamicb Total Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms IF = -1 A, di/dt = 100 A/ms N-Channel N Ch Channel l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V RL = 10 W 10 V, ID ^ -1 A, VGEN = -4.5 V, RG = 6 W N-Ch N-Channel N Ch l VDS = 10 V, VGS = 4.5 V, ID = 1 2 A V 45V 1.2 P-Channel P Ch l VDS = -10 V, VGS = -4.5 V ID = -0.85 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 1.10 0.25 0.50 0.2 0.2 10 8 20 20 20 10 16 8 40 40 20 15 40 40 40 20 30 15 80 80 ns 2.0 2.5 nC C Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70778 S-55457--Rev. B, 09-Mar-98 SI3850DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 3.5 VGS = 5.0 thru 4.0 V 3.0 I D - Drain Current (A) I D - Drain Current (A) 2.5 3.0 V 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1.5 V 2.0 V 3.5 V 3.5 TC = -55_C 3.0 25_C 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 125_C N CHANNEL Transfer Characteristics 2.5 V VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.7 VGS = 3.0 V r DS(on)- On-Resistance ( W ) 0.6 0.5 0.4 0.3 0.2 VGS = 4.5 V C - Capacitance (pF) 120 Capacitance 100 Ciss 80 60 Coss 40 20 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ID - Drain Current (A) 0 0 Crss 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VGS = 10 V ID = 1.2 A 4 Gate Charge 2.0 r DS(on)- On-Resistance ( W ) (Normalized) On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.2 A 1.6 3 1.2 2 0.8 1 0.4 0 0 0.2 0.4 0.6 0.8 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70778 S-55457--Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI3850DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N CHANNEL Source-Drain Diode Forward Voltage 4.0 0.8 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 1.0 0.6 0.4 TJ = 25_C 0.2 ID = 1.2 A 0.1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 30 Single Pulse Power 0.1 V GS(th) Variance (V) ID = 250 mA Power (W) -25 0 25 50 75 100 125 150 -0.0 24 18 -0.1 12 -0.2 6 -0.3 -0.4 -50 0 0.001 0.010 0.100 Time (sec) 1.000 10.000 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W Single Pulse 0.01 10-4 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70778 S-55457--Rev. B, 09-Mar-98 2-4 SI3850DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 2.5 VGS = 5.0 thru 4.0 V 2.0 I D - Drain Current (A) 3.5 V I D - Drain Current (A) 2.0 25_C 1.5 125_C 1.0 2.5 TC = -55_C P CHANNEL Transfer Characteristics 1.5 3.0 V 1.0 2.5 V 0.5 2.0 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.0 r DS(on)- On-Resistance ( W ) VGS = 3.0 V 120 Capacitance 100 C - Capacitance (pF) 1.6 Ciss 80 1.2 VGS = 4.5 V 0.8 60 Coss 40 Crss 0.4 20 0 0 0.5 1.0 1.5 2.0 2.5 ID - Drain Current (A) 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 8 V GS - Gate-to-Source Voltage (V) VGS = 10 V ID = 0.85 A 6 Gate Charge 2.0 r DS(on)- On-Resistance ( W ) (Normalized) On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.85 A 1.6 1.2 4 0.8 2 0.4 0 0 0.3 0.6 0.9 1.2 1.5 1.8 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70778 S-55457--Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-5 SI3850DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P CHANNEL Source-Drain Diode Forward Voltage 4.0 2.0 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 1.0 1.5 1.0 TJ = 25_C 0.5 ID =0.85 A 0.1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 30 Single Pulse Power 0.3 V GS(th) Variance (V) 24 Power (W) 75 100 125 150 0.2 ID = 250 mA 18 0.1 12 0.0 6 -0.1 -0.2 -50 -25 0 25 50 0 0.001 0.010 0.100 Time (sec) 1.000 10.000 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70778 S-55457--Rev. B, 09-Mar-98 2-6 |
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