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| Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31 dB Drain Efficiency -- 15% ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth Driver Application * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31.5 dB ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW Pout. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW4IC2230NBR1 MW4IC2230GNBR1 2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230NBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2230GNBR1 VRD1 VRG1 VDS2 VDS1 GND VDS2 VRD1 VRG1 VDS1 3 Stages IC RFin 1 2 3 4 5 6 7 8 9 10 11 16 15 GND 14 VDS3/ RFout RFin VDS3/RFout VGS1 VGS2 VGS3 VGS1 VGS2 VGS3 GND 13 12 (Top View) GND Quiescent Current Temperature Compensation Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MW4IC2230NBR1 MW4IC2230GNBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Channel Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +8 - 65 to +175 200 20 Unit Vdc Vdc C C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RJC Value (1) 10.5 5.1 2.3 Unit C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Input Return Loss Adjacent Channel Power Ratio Pout = 0.4 W Avg. Pout = 1.26 W Avg. Gps IRL ACPR -- -- - 53.5 - 52 - 50 -- 29 -- 31.5 - 25 -- - 10 dB dB dBc Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, 2110 MHz MW4IC2230NBR1 MW4IC2230GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Reference Application Circuit tuned for 2 - carrier W - CDMA signal) VDD = 28 Vdc, Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps IM3 ACPR IRL -- -- -- -- 31.5 - 52 - 55 - 26 -- -- -- -- dB dBc dBc dB MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 3 VD2 + VD1 + C1 RF INPUT C6 Z1 6 C10 VG1 VG2 VG3 R1 R2 7 NC 8 9 10 11 Quiescent Current Temperature Compensation NC 13 12 + R3 C8 C4 C11 C12 C2 C5 1 2 3 NC 4 NC 5 DUT 16 NC 15 Z2 C7 + C3 VD3 C9 14 Z4 Z5 Z6 Z7 RF OUTPUT Z3 Z1 Z2, Z3 Z4 Z5 2.180 x 0.090 Microstrip 0.040 x 0.430 Microstrip 0.350 x 0.240 Microstrip 0.420 x 0.090 Microstrip Z6 Z7 PCB 1.120 x 0.090 Microstrip 0.340 x 0.090 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55 Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values Part C1, C2, C3, C4 C5, C6, C7, C8, C12 C9, C10 C11 R1, R2, R3 Description 10 F, 35 V Tantalum Capacitors 8.2 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 0.3 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJD106K035 100B8R2CW 100B1R8BW 100B0R3BW Manufacturer AVX ATC ATC ATC MW4IC2230NBR1 MW4IC2230GNBR1 4 RF Device Data Freescale Semiconductor C2 VD2 MW4IC2230 Rev 1 C3 VD1 VD3 C5 C7 C1 C6 C12 C9 C11 C10 R1 VG1 R2 VG2 R3 VG3 C8 GND C4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 32 Gps 31 G ps , POWER GAIN (dB) 30 29 28 27 26 2050 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA ACPR -10 -20 -30 -40 -50 -60 2100 2150 f, FREQUENCY (MHz) 2200 0 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IRL Figure 5. Single - Carrier W - CDMA Wideband Performance @ Pout = 26 dBm IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 32 Gps 31 G ps , POWER GAIN (dB) 30 IRL 29 28 27 26 2050 VDD = 28 Vdc Pout = 31 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA 0 -10 -20 -30 -40 ACPR -50 -60 2100 2150 f, FREQUENCY (MHz) 2200 -40 VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA f = 2140 MHz, 1-Carrier W-CDMA TC = 85_C -45 25_C -50 -30_C -55 -60 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 Figure 6. Single - Carrier W - CDMA Wideband Performance @ Pout = 31 dBm Figure 7. Adjacent Channel Power Ratio versus Output Power IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IM3, INTERMODULATION DISTORTION (dBc) 33 32 G ps , POWER GAIN (dB) 31 30 29 28 27 2050 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA 2-Carrier W-CDMA Gps IRL 0 -10 -20 -30 -40 IM3 ACPR 2100 2150 f, FREQUENCY (MHz) 2200 -50 -60 Figure 8. 2 - Carrier W - CDMA Wideband Performance MW4IC2230NBR1 MW4IC2230GNBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 2 2.00 P3dB = 46.3 dBm (43 W) P1dB = 45.3 dBm (34 W) Actual DELAY (ns) Ideal 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 1.55 24 1.50 1950 2000 2050 2100 2150 2200 2250 2300 VDD = 28 Vdc, Small Signal IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA Pout , OUTPUT POWER (dBm) VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz 4 6 8 10 12 14 16 18 20 22 Pin, INPUT POWER (dBm) f, FREQUENCY (MHz) Figure 9. Output Power versus Input Power 1.E+09 MTTF FACTOR (HOURS X AMPS 2 ) 3rd Stage 2nd Stage 1.E+07 1st Stage Figure 10. Delay versus Frequency 1.E+08 1.E+06 1.E+05 1.E+04 90 100 110 120 130 140 150 160 170 180 190 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 11. MTTF Factor versus Temperature Junction MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 7 Zload* f = 2230 MHz Zin* f = 2050 MHz f = 2050 MHz f = 2230 MHz Zo = 50 VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm f MHz 2050 2110 2140 2170 2230 Zin Zin 42.18 + j1.49 41.06 - j1.30 40.49 - j2.42 40.05 - j3.45 39.29 - j6.31 Zload 8.52 - j0.46 8.58 - j0.20 8.63 - j0.09 8.69 - j0.01 8.81 + j0.04 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 12. Series Equivalent Input and Load Impedance MW4IC2230NBR1 MW4IC2230GNBR1 8 RF Device Data Freescale Semiconductor NOTES MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MW4IC2230NBR1 MW4IC2230GNBR1 10 RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 11 MW4IC2230NBR1 MW4IC2230GNBR1 12 RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 13 MW4IC2230NBR1 MW4IC2230GNBR1 14 RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MW4IC2230NBR1 MW4IC2230GNBR1 Rev. 16 6, 5/2006 Document Number: MW4IC2230N RF Device Data Freescale Semiconductor |
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