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ZXMN3AM832
MPPSTM Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count
3x2mm Dual Die MLP
FEATURES
* Low On - Resistance * Fast switching speed * Low threshold * Low gate drive * 3mm x 2mm MLP
APPLICATIONS
* DC-DC Converters * Power Management Functions * Disconnection switches * Motor Control
D2
PINOUT
5
D2
6
D1
7
D1
8
ORDERING INFORMATION
DEVICE ZXMN3AM832TA ZXMN3AM832TC REEL 7'` 13'` TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units
G2 S2 G1 S1
4
3
2
1
3mm x 2mm Dual MLP underside view
DEVICE MARKING
DNB
ISSUE 1 - OCTOBER 2005 1
ZXMN3AM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(f) @V GS =10V; T A =70 C (b)(f) @V GS =10V; T A =25 C (a)(f) Pulsed Drain Current Continuous Source Current (Body Diode)(b)(f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID N-Channel 30 20 3.7 3.0 2.9 13 3.2 13 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C
I DM IS I SM PD PD PD PD PD PD T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)
Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.
SYMBOL R JA R JA R JA R JA R JA R JA
VALUE 83.3 51 125 111 73.5 41.7
UNIT C/W C/W C/W C/W C/W C/W
ISSUE 1 - OCTOBER 2005 2
ZXMN3AM832
TYPICAL CHARACTERISTICS
3.5
Max Power Dissipation (W)
10
ID Drain Current (A)
VCE(SAT) RDS(ON) Limited Limited
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
1oz Cu Note (d)(f)
2oz Cu Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)(g)
1
DC 1s 100ms Note (a)(f) 10ms 1ms 100us
100m
10m
Single Pulse, Tamb=25C
1
10
25
50
75
100
125
150
VDS Drain-Source Voltage (V)
Temperature (C)
Safe Operating Area
Thermal Resistance (C/W) Thermal Resistance (C/W)
80 60
D=0.5 Note (a)(f)
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
1oz copper Note (f) 1oz copper Note (g)
40 20
D=0.2 Single Pulse D=0.05 D=0.1
2oz copper Note (f) 2oz copper Note (g)
0 100
1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5 3.0 Tj max=150C 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1
1oz copper Note (f) 1oz copper Note (g) Tamb=25C 2oz copper Note (g)
Thermal Resistance v Board Area
PD Dissipation (W)
Continuous 2oz copper Note (f)
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - OCTOBER 2005 3
ZXMN3AM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) 1 0.106 3.5 0.12 0.18 30 0.5 100 V A nA V S I D =250A, V GS =0V V DS =30V, V GS =0V V GS =20V, V DS =0V I =250A, V DS = V GS
D
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3)
NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
V GS =10V, I D =2.5A V GS =4.5V, I D =2.0A V DS =4.5V,I D =2.5A
g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr
190 38 20
pF pF pF V DS =25 V, V GS =0V, f=1MHz
1.7 2.3 6.6 2.9 2.3 3.9 0.6 0.9
ns ns ns ns nC nC nC nC V DS =15V,V GS =10V, I D =2.5A V DS =15V,V GS =5V, I D =2.5A V DD =15V, I D =2.5A R G =6.0, V GS =10V
0.84 17.7 13.0
0.95
V ns nC
T J =25C, I S =1.7A, V GS =0V T J =25C, I F =2.5A, di/dt= 100A/s
ISSUE 1 - OCTOBER 2005 4
ZXMN3AM832
TYPICAL CHARACTERISTICS
ID Drain Current (A)
4V 3.5V
ID Drain Current (A)
10
T = 25C
10V
7V
5V 4.5V
T = 150C
10V
7V
5V 4.5V 4V 3.5V 3V 2.5V VGS
10
1
VGS
3V
1
0.1 0.1 1 10
2.5V
0.1
2V
VDS Drain-Source Voltage (V)
0.1
Output Characteristics
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
VGS = 10V ID = 2.5A
10
1.6
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
VDS = 10V
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
RDS(on)
T = 150C
1
VGS(th) VGS = VDS ID = 250uA
T = 25C
0.1 2.0
2.5
3.0
3.5
4.0
4.5
5.0
50
100
150
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
2.5V
VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
3V
3.5V
4V
VGS 4.5V 5V 7V
10
T = 150C
1
1
T = 25C
0.1
10V T = 25C
0.1 0.4 0.6 0.8 1.0 1.2
0.1
ID Drain Current (A)
1
10
On-Resistance v Drain Current
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
ISSUE 1 - OCTOBER 2005 5
ZXMN3AM832
TYPICAL CHARACTERISTICS
300
10
VGS Gate-Source Voltage (V)
C Capacitance (pF)
250 200 150 100 50 0 0.1 1
CISS COSS
VGS = 0V f = 1MHz
ID = 2.5A
8 6 4 2 0 0 1 2 3 4
VDS = 15V
CRSS
10
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
ISSUE 1 - OCTOBER 2005 6
ZXMN3AM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETERS DIM A A1 A2 A3 b b1 D D2 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETERS MIN. MAX. INCHES MIN. MAX.
0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 12
0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005
3.00 BSC 0.82 1.02
0.118 BSC 0.032 0.040
0.0029 BSC 0 12
(c) Zetex Semiconductors plc 2005
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005 7

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