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DIM600DDM17-A000
DIM600DDM17-A000
Dual Switch IGBT Module
DS5596-1.1 April 2003
FEATURES
I I I I
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 600A 1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I I I
High Reliability Inverters Motor Controllers Traction Drives
5(E1)
1(E1)
2(C2) 12(C2)
6(G1)
11(G2)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DDM17-A000 is a dual switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
7(C1) 3(C1)
10(E2) 4(E2)
Fig. 1 Dual switch circuit diagram
5 6 3 7 8 1
ORDERING INFORMATION
9
Order As: DIM600DDM17-A000 Note: When ordering, please use the complete part number.
12 11 10
4
2
Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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DIM600DDM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 75C 1ms, Tcase = 110C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS VGE = 0V Test Conditions Max. 1700 20 600 1200 5200 120 4000 10 Units V V A A W kA2s V pC
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 8 C/kW 40 C/kW Min. Typ. Max. 27 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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DIM600DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 30mA, VGE = VCE VGE = 15V, IC = 600A VGE = 15V, IC = 600A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 600A IF = 600A, Tcase = 125C Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 Min. 4.5 Typ. 5.5 2.7 3.4 2.0 2.1 45 3.8 20 0.27 2780 2400 Max. 1 20 4 6.5 3.2 4.0 600 1200 2.3 2.4 Units mA mA A V V V A A V V nF nF nH m A A
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy IF = 600A, VR = 50% VCES, dIF/dt = 3000A/s Test Conditions IC = 600A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 1200 140 190 250 250 220 6.8 150 350 100 Max. Units ns ns mJ ns ns mJ C C A mJ
ELECTRICAL CHARACTERISTICS
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy IF = 600A, VR = 50% VCES, dIF/dt = 3000A/s Test Conditions IC = 600A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 1500 170 270 400 250 350 250 400 150 Max. Units ns ns mJ ns ns mJ C A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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DIM600DDM17-A000
TYPICAL CHARACTERISTICS
1200
Common emitter. 1100 Tcase = 25C
Vce is measured at power busbars
1200 Common emitter. 1100 Tcase = 125C
Vce is measured at power busbars
1000 and not the auxiliary terminals 900 Collector current, IC - (A) 800 700 600 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 VGE = 20V 15V 12V 10V 3.5 4 4.5 5
1000 and not the auxiliary terminals 900
Collector current, IC - (A)
800 700 600 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Collector-emitter voltage, Vce - (V) 5.5 6 VGE = 20V 15V 12V 10V
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
450
Conditions: Vce = 900V 400 T = 125C c Rg = 3.3 Ohms 350
800 Conditions: Vce = 900V IC = 600A Tc = 125C 600
Switching energy - (mJ)
300 250 200 150 100 50 0 0 200 400 600 Collector current, IC - (A) 800 1000 Eon Eoff Erec
Switching energy - (mJ)
400
200 Eon Eoff Erec 0 0 2 4 6 8 Gate Resistance, Rg - (Ohms) 10 12
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
1600
2000
Tj = 25C Tj = 125C
and not the auxiliary terminals
1400 VF is measured at power busbars 1200
Foward current, IF - (A)
1800 1600
Collector current, IC - (A)
1400 Chip
1000 800 600 400
1200 1000 800 600 400
Module
200 0 0
0.5
2.0 1.0 1.5 2.5 Foward voltage, VF - (V)
3.0
3.5
Tcase = 125C 200 Vge = 15V Rg(min) = 3.3 0 1200 0 400 800 1600 Collector-emitter voltage, Vce - (V)
2000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
1200
800 700 600
DC collector current, IC - (A)
1000
Reverse current, IR - (A)
800
500 400 300 200 100 Tj = 125C 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000
600
400
200
0 0
20
40 60 80 100 Case temperature, Tcase - (C)
120
140
Fig. 9 Diode reverse bias safe operating area
Fig. 10 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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DIM600DDM17-A000
100 Diode
Transient thermal impedance, Zth (j-c) - (C/kW )
Transistor 10
1
IGBT Diode
0.1 0.001
Ri (C/KW) i (ms) Ri (C/KW) i (ms)
1 0.74 0.12 1.23 0.11
2 5.34 3.89 9.26 4.24
3 7.52 47.15 12.96 48.75
4 10.42 257.21 16.53 256.75
0.01
0.1 Pulse width, tp - (s)
1
10
Fig. 11 Transient thermal impedance
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62 15 15
62
13
5
65
6
24
3
16
1
11.85
7 8 9 4 2
18
12
26
13
11 10 14 11.5 35 20 4x M8 6x O7
6x M4
38 28
5 140 Main Terminal screw plastic hole depth (M8) = 16.8 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9 0.3 Copper terminal thickness, Main Terminal pins = 1.5 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 0.1 Nominal weight: 1050g Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
31.5
43.3 57 65
57
9/10
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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