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FDD6672A
May 2000 PRELIMINARY
FDD6672A
30V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
* 65 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V RDS(ON) = 8 m @ VGS = 10 V * High performance trench technology for extremely low RDS(ON) * Low gate charge (33 nC typical) * High power and current handling capability
Applications
* DC/DC converter
D
D G S TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA =25 oC unless otherwise noted
Parameter
Ratings
30 12
(Note 1a)
Units
V V A W
65 100 70 3.2 1.3 -55 to +150
Maximum Power Dissipation @ TC = 25C @ TA = 25C @ TA = 25C
(Note 1) (Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJ A Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1b)
1.8 96
C/W C/W
Package Marking and Ordering Information
Device Marking FDD6672A Device FDD6672A Reel Size 13'' Tape width 16mm Quantity 2500 units
(c)2000 Fairchild Semiconductor Corporation
FDD6672A Rev B(W)
FDD6672A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
T A = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V VDS = 0 V
Min
30
Typ
Max
Units
V
Off Characteristics
20 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = VGS = VGS = VGS = 4.5 V, 4.5 V, 10 V, 10 V, ID = 13 A ID = 13 A, TJ=125C ID = 14 A VDS = 5 V ID = 15 A
0.8
1.2 -4 8.2 11.5 6.8
2.0
V mV/C
9.5 16 8
m
ID(on) gFS
50 75
A S
VDS = 10 V,
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
5070 550 230
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
17 18 69 29
25 25 100 42 46
ns ns ns ns nC nC nC
VDS = 15 V, ID = 15 A, VGS = 4.5 V
33 7.5 6.8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.7 A
(Note 2)
2.7 0.7 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA= 40o C/W when mounted on a 1in 2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
b) RJA= 96 o C/W on a minimum mounting pad.
FDD6672A Rev B(W)
FDD6672A
Typical Characteristics
50 3.5V I D, DRAIN CURRENT (A) 40 2.5V 30 3.0V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V
1.5
VGS = 2.5V 1.3
20
2.0V
3.0V 1.1 3.5V 4.0V 4.5V
10
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.9 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 R DS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 I D = 15A VGS = 10V
ID = 6 A 0.02
0.015 TA = 125 C 0.01 TA = 25 C 0.005
o o
-25
0
25
50
75
100
o
125
150
0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
60 VDS = 5V I D, DRAIN CURRENT (A) 45 IS , REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125 C 1 25 C -55 C 0.1
o o o
30 TA = 125 C 15
o o
25 C
o
0.01
-55 C
0 0.5
0.001 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6672A Rev B(W)
FDD6672A
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) I D = 12.5A 4 VDS = 5V 15V 3 10V CAPACITANCE (pF)
8000 f = 1MHz VGS = 0 V 6000 C ISS
4000
2
2000 1 COSS C RSS 0 0 10 20 Qg , GATE CHARGE (nC) 30 40 0 0 5 10 15 20 25 30 VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000 RDS(ON) LIMIT 1ms 10ms 100ms 1s 1 VGS = 4.5V SINGLE PULSE 0.1 R JA = 96 C/W TA = 25 C 0.01 0.1 1 10 100 0
o o
Figure 8. Capacitance Characteristics.
100 SINGLE PULSE R JA = 96 C/W TA = 25C
100
100 s
80
10 10s DC
60
40
20
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
Figure 10. Single Pulse Maximum Power Dissipation.
1
D = 0.5 0.2 0.1 0.05 0.02
0.1
R JA(t) = r(t) + R JA = 96 C/W P(pk) t1 t2
SINGLE PULSE 0.01
0.01
TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2
0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6672A Rev B(W)
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Packaging Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label
D-PAK (TO-252) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel(kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 359x359x57 5,000 0.300 1.200
D-PAK (TO-252) Unit Orientation
359mm x 359mm x 57mm Standard Intermediate box ESD Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019 FSID: FDD6680 QTY: 2500 SPEC:
D/C1: Z9942 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
TO-252 (D-PAK) Tape Leader and Trailer Configuration: Figure 2.0
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets
FZ9935 FDD 6680
FZ9935 FDD 6680
FZ9935 FDD 6680
FZ9935 FDD 6680
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type TO252 (24mm)
A0
6.90 +/-0.10
B0
10.50 +/-0.10
W
16.0 +/-0.3
D0
1.55 +/-0.05
D1
1.5 +/-0.10
E1
1.75 +/-0.10
E2
14.25 min
F
7.50 +/-0.10
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
2.65 +/-0.10
T
0.30 +/-0.05
Wc
13.0 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum Typical component cavity center line
0.9mm maximum
B0 10 deg maximum component rotation
0.9mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
D-PAK (TO-252) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
B Min Dim C
Dim A max
Dim N
Dim D min
DETAIL AA See detail AA W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
164mm
Reel Option
13" Dia
Dim A
13.00 330
Dim B
0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2
Dim N
4.00 100
Dim W1
0.646 +0.078/-0.000 16.4 +2/0
Dim W2
0.882 22.4
Dim W3 (LSL-USL)
0.626 - 0.764 15.9 - 19.4
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
TO-252 (FS PKG Code AA)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.300
September 1999, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. E

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