View IRF6618_711882.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRF6618/IRF6618TR1
VDSS
Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l l
PD - 94726D
HEXFET(R) Power MOSFET
RDS(on) max
2.2m@VGS = 10V 3.4m@VGS = 4.5V
Qg
43 nC
30V
MT
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
DirectFET ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6618 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/ dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS I D @ TC = 25C I D @ TA = 25C I D @ TA = 70C I DM PD @TA = 25C PD @TA = 70C PD @TC = 25C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
30 20 170 30 24 240 2.8 1.8 89 0.022 -40 to + 150
Units
V
A
g g
W W/C C
Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- ---
Avalanche Characteristics
Max. 210 24 Units mJ A
EAS I AR
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case
Parameter
i
fj g h
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
Junction-to-PCB Mounted
Notes through are on page 9
www.irf.com
1
11/3/04
IRF6618/IRF6618TR1
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- --- 100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 23 1.7 --- 1.64 -5.7 --- --- --- --- --- --- 43 12 4.0 15 12 19 28 1.0 21 71 27 8.1 5640 1260 570 --- --- 2.2 3.4 2.35 --- 5.0 1.0 150 100 -100 --- 65 --- --- 23 --- --- --- 2.2 --- --- --- --- --- --- --- pF VGS = 0V VDS = 15V ns nC nC VDS = 15V VGS = 4.5V ID = 24A S nA A V mV/C V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 30A VGS = 4.5V, ID VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V VDS = 15V, ID = 24A
e = 24A e
See Fig. 16 VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5VAe ID = 24A Clamped Inductive Load
= 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- 0.78 43 46 30 A 240 1.2 65 69 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 24A, VGS = 0V TJ = 25C, IF = 24A di/dt = 100A/s
e
e
2
www.irf.com
IRF6618/IRF6618TR1
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100 2.7V
2.7V 10
60s PULSE WIDTH
1 0.1 1 Tj = 25C
60s PULSE WIDTH
10 Tj = 150C 0.1 1 10
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
1.5
100 T J = 150C 10 T J = 25C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
ID = 30A VGS = 10V
1.0
1 VDS = 10V 60s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 4.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
Fig 3. Typical Transfer Characteristics
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 4. Normalized On-Resistance vs. Temperature
6.0 ID= 24A
VGS, Gate-to-Source Voltage (V)
5.0 4.0 3.0 2.0 1.0 0.0
VDS= 24V VDS= 15V
C, Capacitance(pF)
10000
Ciss Coss
1000
Crss
100 1 10 100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRF6618/IRF6618TR1
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.00
T J = 150C
100 100sec
10.00
1.00
T J = 25C
10 T C = 25C
1msec Tj = 150C Single Pulse
VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
1 0 1 10
10msec 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
180
VGS(th) Gate threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
160 140
ID, Drain Current (A)
2.0
120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (C)
1.5
ID = 250A
1.0
0.5
0.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
100
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJA )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
0.1
Ri (C/W)
0.6784 17.299 17.566 9.4701
i (sec)
0.00086 0.57756 8.94 106
0.01
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.0001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com
IRF6618/IRF6618TR1
RDS(on), Drain-to -Source On Resistance (m )
6
900
EAS , Single Pulse Avalanche Energy (mJ)
ID = 30A 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 T J = 25C T J = 125C
800 700 600 500 400 300 200 100 0 25 50 75
ID 9.3A 11A BOTTOM 24A TOP
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
Current Regulator Same Type as D.U.T.
V(BR)DSS
15V
tp
12V .2F
DRIVER
50K .3F
VDS
L
D.U.T.
RG
20V VGS
+ V - DS
D.U.T
IAS tp
+ - VDD
A
VGS
0.01
I AS
3mA
IG
ID
Current Sampling Resistors
Fig 14. Unclamped Inductive Test Circuit and Waveform
LD VDS
Fig 15. Gate Charge Test Circuit
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 16. Switching Time Test Circuit
Fig 17. Switching Time Waveforms
www.irf.com
5
IRF6618/IRF6618TR1
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*
VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
6
www.irf.com
IRF6618/IRF6618TR1
DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 3.85 C 0.45 D 0.35 0.82 E 0.78 0.92 F 0.88 1.82 G 1.78 0.98 1.02 H 0.67 J 0.63 1.01 K O.88 2.63 L 2.46 0.70 M 0.59 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN MAX 0.246 0.250 0.189 0.199 0.152 0.156 0.014 0.018 0.031 0.032 0.035 0.036 0.070 0.072 0.039 0.040 0.025 0.026 0.035 0.039 0.097 0.104 0.023 0.028 0.001 0.003 0.003 0.007
NOTE: CONTROLLING DIMENSIONS ARE IN MM
www.irf.com
7
IRF6618/IRF6618TR1
DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain
6 5 7
3 4
1
2
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1 STANDARD OPTION METRIC CODE MAX MIN A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL METRIC IMPERIAL MAX MIN MIN MAX MAX MIN N.C 6.9 12.992 N.C 177.77 N.C N.C 0.75 0.795 N.C 19.06 N.C 0.50 0.53 0.504 0.520 13.5 12.8 0.059 0.059 N.C 1.5 N.C N.C 2.31 3.937 N.C N.C 58.72 N.C N.C N.C 0.53 N.C 13.50 0.724 0.47 0.488 N.C 11.9 0.567 12.01 0.47 0.469 N.C 0.606 11.9 12.01
8
www.irf.com
IRF6618/IRF6618TR1
DirectFET Part Marking
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.75mH, RG = 25, IAS = 24A. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in. square Cu board.
Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
R is measured at TJ of approximately 90C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
www.irf.com
9

▲Up To Search▲

Price & Availability of IRF6618

	To Download IRF6618 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .