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ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D-Pak (TO-263) and TO-220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. EcoSPARKTM devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Formerly Developmental Type 49444
Applications
* Automotive Ignition Coil Driver Circuits * Coil- On Plug Applications
Features
* Space saving D - Pak package available * SCIS Energy = 200mJ at TJ = 25oC * Logic Level Gate Drive
Package
JEDEC TO-252AA D-Pak JEDEC TO-263AB D-Pak JEDEC TO-220AB
Symbol
COLLECTOR
E C G
R1 GATE
G E
G E COLLECTOR (FLANGE) COLLECTOR (FLANGE)
R2
EMITTER
Device Maximum Ratings TA = 25C unless otherwise noted
Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) At Starting TJ = 25C, ISCIS = 11.5A, L = 3.0mHy At Starting TJ = 150C, ISCIS = 8.9A, L = 3.0mHy Collector Current Continuous, At TC = 25C, See Fig 9 Collector Current Continuous, At TC = 110C, See Fig 9 Gate to Emitter Voltage Continuous Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500 Ratings 430 24 200 120 10 10 10 130 0.87 -40 to 175 -40 to 175 300 260 4 Units V V mJ mJ A A V W W/C C C C C kV
(c)2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Package Marking and Ordering Information
Device Marking V2040D V2040S V2040P V2040D V2040S Device ISL9V2040D3ST ISL9V2040S3ST ISL9V2040P3 ISL9V2040D3S ISL9V2040S3S Package TO-252AA TO-263AB TO-220AB TO-252AA TO-263AB Reel Size 330mm 330mm Tube Tube Tube Tape Width 16mm 24mm N/A N/A N/A Quantity 2500 800 50 75 50
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C IC = -75mA, VGE = 0V, TC = 25C IGES = 2mA VCER = 250V, RG = 1K, See Fig. 11 TC = 25C TC = 150C 370 400 430 V
BVCES
Collector to Emitter Breakdown Voltage
390
420
450
V
BVECS BVGES ICER
Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current
30 12 10K
14 70 -
25 1 1 40 26K
V V A mA mA mA
IECS R1 R2
Emitter to Collector Leakage Current Series Gate Resistance Gate to Emitter Resistance
VEC = 24V, See TC = 25C Fig. 11 TC = 150C
On State Characteristics
VCE(SAT) VCE(SAT) Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V IC = 10A, VGE = 4.5V TC = 25C, See Fig. 3 TC = 150C See Fig. 4 1.45 1.95 1.9 2.3 V V
Dynamic Characteristics
QG(ON) VGE(TH) Gate Charge Gate to Emitter Threshold Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 TC = 25C TC = 150C 1.3 0.75 12 3.4 2.2 1.8 nC V V V
VGEP
Gate to Emitter Plateau Voltage
IC = 10A, VCE = 12V
Switching Characteristics
td(ON)R triseR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 TJ = 25C, L = 3.0mHy, RG = 1K, VGE = 5V, See Fig. 1 & 2 0.61 2.17 3.64 2.36 200 s s s s mJ
Thermal Characteristics
RJC Thermal Resistance Junction-Case TO-252, TO-263, TO-220 1.15 C/W
(c)2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Typical Performance Curves
ISCIS, INDUCTIVE SWITCHING CURRENT (A) 20 RG = 1K, VGE = 5V,Vdd = 14V 18 16 14 12 10 8 6 4 2 SCIS Curves valid for Vclamp Voltages of <430V 0 0 20 40 60 80 100 120 140 160 180 200 tCLP, TIME IN CLAMP (S) TJ = 150C TJ = 25C ISCIS, INDUCTIVE SWITCHING CURRENT (A) 20 18 16 14 TJ = 25C 12 10 8 6 4 2 0 0 SCIS Curves valid for Vclamp Voltages of <430V 2 4 6 8 10 TJ = 150C RG = 1K, VGE = 5V,Vdd = 14V
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.60 ICE = 6A 1.55 1.50 1.45 1.40 1.35 VGE = 5.0V 1.30 VGE = 8.0V 1.25 -75 -25 25 75 125 175 VGE = 4.5V VGE = 3.7V VGE = 4.0V
Figure 2. Self Clamped Inductive Switching Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.4 ICE = 10A 2.2 VGE = 3.7V
VGE = 4.0V 2.0
1.8
VGE = 4.5V
1.6 VGE = 8.0V VGE = 5.0V
1.4
-75
-25
25
75
125
175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 20 VGE = 8.0V VGE = 5.0V 15 VGE = 4.5V VGE = 4.0V VGE = 3.7V 10
Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 20 VGE = 8.0V VGE = 5.0V 15 VGE = 4.5V VGE = 4.0V VGE = 3.7V 10
5
5 TJ = 25C 0 0 1.0 2.0 3.0 4.0
TJ = - 40C 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs Collector Current
Figure 6. Collector to Emitter On-State Voltage vs Collector Current
(c)2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Typical Performance Curves (Continued)
20 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 5.0V 15 VGE = 4.5V VGE = 4.0V VGE = 3.7V 10 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V 30 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 25
20
15
TJ = 150C
10 TJ = 25C 5 TJ = -40C 0 1.0 2.0 3.0 4.0 5.0
5
TJ = 175C 0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs Collector Current
15.0 VGE = 4.0V ICE, DC COLLECTOR CURRENT (A) 12.5 VTH, THRESHOLD VOLTAGE (V) 2.2 2.4
Figure 8. Transfer Characteristics
VCE = VGE ICE = 1mA
10.0
2.0
7.5
1.8
5.0
1.6
2.5
1.4
0
1.2 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (C)
TJ JUNCTION TEMPERATURE (C)
Figure 9. DC Collector Current vs Case Temperature
10000 VECS = 24V LEAKAGE CURRENT (A) 1000 SWITCHING TIME (S)
Figure 10. Threshold Voltage vs Junction Temperature
10 ICE = 6.5A, VGE = 5V, RG = 1K
Inductive tOFF 8
100
6 Resistive tOFF
10
VCES = 300V
4 1 VCES = 250V Resistive tON
0.1 -50 -25 0 25 50 75 100 125 150 175
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 11. Leakage Current vs Junction Temperature
Figure 12. Switching Time vs Junction Temperature
(c)2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Typical Performance Curves (Continued)
1200 FREQUENCY = 1 MHz 1000 C, CAPACITANCE (pF) VGE, GATE TO EMITTER VOLTAGE (V) 7 6 VCE = 12V 5 4 3 2 1 0 0 5 10 15 20 25 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 IG(REF) = 1mA, RL = 1.25, TJ = 25C
800 CIES 600
400 CRES 200 COES
VCE = 6V
0
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter Voltage
415
Figure 14. Gate Charge
ICER = 10mA BVCER, BREAKDOWN VOLTAGE (V) 410 405 400 395 390 385 380 375 370 10 100 RG, SERIES GATE RESISTANCE (k) 1000 2000 3000 TJ = 175C TJ = 25C TJ = - 40C
Figure 15. Breakdown Voltage vs Series Gate Resistance
ZthJC, NORMALIZED THERMAL RESPONSE
100 0.5
0.2 0.1 10-1 0.05
t1 PD t2
0.02 0.01 SINGLE PULSE
DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
10-3 10-2 10-1 100
10-2 10-5
10-4
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
(c)2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
Test Circuit and Waveforms
L VCE R or L C RG = 1K 5V E E G + LOAD
C RG DUT G
PULSE GEN
DUT
VCE
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGE DUT tP 0V RG -
BVCES
VCE VDD
+
VDD
IAS 0.01
0 tAV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
(c)2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
SPICE Thermal Model
REV 25 April 2002 ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3 CTHERM1 th 6 1.3e -2 CTHERM2 6 5 8.8e -4 CTHERM3 5 4 8.8e -3 CTHERM4 4 3 3.9e -1 CTHERM5 3 2 3.6e -1 CTHERM6 2 tl 1.9e -1 RTHERM1 th 6 1.2e -1 RTHERM2 6 5 3.2e -1 RTHERM3 5 4 1.7e -1 RTHERM4 4 3 1.2e -1 RTHERM5 3 2 1.3e -1 RTHERM6 2 tl 2.5e -1
th
JUNCTION
RTHERM1
CTHERM1
6
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 1.3e -3 ctherm.ctherm2 6 5 = 8.8e -4 ctherm.ctherm3 5 4 = 8.8e -3 ctherm.ctherm4 4 3 = 3.9e -1 ctherm.ctherm5 3 2 = 3.6e -1 ctherm.ctherm6 2 tl = 1.9e -1 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 3.2e -1 rtherm.rtherm3 5 4 = 1.7e -1 rtherm.rtherm4 4 3 = 1.2e -1 rtherm.rtherm5 3 2 = 1.3e -1 rtherm.rtherm6 2 tl = 2.5e -1 }
RTHERM3 CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
(c)2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13

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