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| ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET VDSS = 800 V ID25 = 25 A RDS(on) = 150 m Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25C to 150C Continuous TC = 25C TC = 90C Package lead current limit Io Io = 10A, TC = 25C = 20A Maximum Ratings 800 20 25 9 45 690 0.5 6 250 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ V/ns W C C C C V~ Nm/lb-in g ISO264TM G D S (TAB) G = Gate, S = Source * Patent pending D = Drain, VDS < VDSS, IF 17 A, TVJ = 150C dIR/dt = 100 A/s TC = 25C Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) Low thermal resistance due to reduced chip thickness Low drain to tab capacitance(<40pF) Applications Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) Power Factor Correction (PFC) Welding Inductive Heating Advantages Easy assembly Space savings High power density CoolMOS is a trademark of Infineon Technology. 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting torque 300 2500 0.9 / 6 8 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 126 297 2 TJ = 25C TJ = 125C 10 200 150 m m 4 50 V A A nA RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = ID90, Note 1 VGS = 10 V, ID = ID90, Note 1 TJ = 125C VDS = VGS, ID = 2 mA VDS = VDSS VGS = 0 V VGS = 20 VDC, VDS = 0 (c) 2003 IXYS All rights reserved DS99099(10/03) IXKG 25N80C Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 166 VGS = 10 V, VDS = 640 V, ID = 17 A 18 84 25 VGS = 10 V, VDS = 640V ID = 35 A, RG = 2.2 25 75 10 0.5 0.30 nC nC nC ns ns ns ns K/W K/W ISO264 OUTLINE Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCH Reverse Conduction Symbol VSD Test Conditions IF = 12.5 A, VGS = 0 V Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1 1.2 V 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - No Connection Note: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665 |
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