 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| KSC5030F High Voltage Fast Switching Transistor KSC5030F High Voltage Fast Switching Transistor Features * Fast Speed Switching * Wide Safe Operating Area 1 TO-3PF 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature Value 1100 800 7 6 20 60 150 -55 ~ 150 Units V V V A A W C C * Pulse Test: PW = 300s, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking KSC5030F Device KSC5030FRTU Package TO3PF Reel Size - Tape Width - Quantity 50 (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSC5030F Rev. A KSC5030F High Voltage Fast Switching Transistor Electrical Characteristics Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) COB tON tSTG tF TC = 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn On Time Storage Time Fall Time Conditions IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 3A, IB1 = - IB2 = 0.6A L=1mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 2.0A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, IE = 0, f = 1MHz VCC=400V, IC=4A IB1=0.8A, IB2=-1.6A RL=100 Min. 1100 800 7 800 Typ. Max Units V V V V 10 10 10 8 40 2.0 1.5 120 0.5 3.0 0.3 A A V V pF s s s hFE Classification Classification hFE1 R 10 ~ 20 O 15 ~ 30 Y 20 ~ 40 KSC5030F Rev. A 2 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 1. Static Characterstic 10 9 Figure 2. DC Current Gain 1000 VCE = 5V IC[A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 hFE, DC CURRENT GAIN 10 100 IB = 800mA IB = 700mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA IB = 20mA I = 0 B 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 Figure 4. Base-Emitter On Voltage 10 IC = 5 IB 9 VCE = 5V IC[A], COLLECTOR CURRENT 1 10 8 7 6 5 4 3 2 1 1 VBE(sat) 0.1 VCE(sat) 0.01 0.01 0.1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Switching Time 10 Figure 6. Forward Biased Safe Operating Area 100 tSTG IC(max).(Pulse) IC[A], COLLECTOR CURRENT s 0 10 tON, tSTG, tF [s], TIME 10 IC(max) DC ms 10 s 1m 1 tON 1 tF 0.1 0.1 0.01 0.1 1 10 0.01 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE KSC5030F Rev. A 3 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) Figure 7. Reverse Biased Safe Operating Area 100 Figure 8. Power Derating Curve 80 L=200uH IB2 = -0.6A 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 10 60 50 40 30 20 10 1 0.1 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE KSC5030F Rev. A 4 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor Mechanical Dimensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 22.00 0.20 Dimensions in Millimeters KSC5030F Rev. A 5 www.fairchildsemi.com KSC5030F High Voltage Fast Switching Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM Scalar PumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I17 6 KSC5030F Rev. A www.fairchildsemi.com |
Price & Availability of KSC5030F05
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |