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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC8S/D Advance Information TRIACS Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. * Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits * High Immunity to dv/dt -- 25 V/ms Minimum at 110_C * High Commutating di/dt -- 8.0 A/ms Minimum at 110_C * Minimum and Maximum Values of IGT, VGT and IH Specified for ease of Design * On-State Current Rating of 8 Amperes RMS at 70_C * High Surge Current Capability -- 70 Amperes * Blocking Voltage to 800 Volts * Rugged, Economical TO220AB Package MAC8S SERIES TRIACS 8 AMPERES RMS 400 THRU 800 VOLTS MT2 MT1 MT2 G CASE 221A-06 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) (TJ = -40 to 110C, Sine Wave, 50 to 60Hz, Gate Open) MAC8SD MAC8SM MAC8SN IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Symbol VDRM 400 600 800 8 70 20 16 0.35 - 40 to +110 - 40 to +150 A A A2sec Watts Watts C C Value Unit Volts On-State RMS Current (Full Cycle Sine Wave, 60Hz, TJ = 70C) Peak Non-repetitive Surge Current (One Half Cycle, 60Hz, TJ = 110C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 1.0s, TC = 70C) Average Gate Power (t = 8.3ms, TC = 70C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds C/W RJC RJA TL 2.2 62.5 260 C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 0 Motorola Thyristor (c) Motorola, Inc. 1995 Device Data 1 Data Sheets MAC8S SERIES ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) IDRM TJ = 25C TJ = 110C -- -- -- -- 0.01 2.0 mA ON CHARACTERISTICS Peak On-State Voltage* (ITM = 11A) VTM IGT -- .8 .8 .8 -- 2.0 3.0 3.0 3.0 5.0 10 5.0 0.62 0.60 0.65 1.85 5.0 5.0 5.0 10 15 20 15 Volts mA Continuous Gate Trigger Current (VD = 12 V, RL = 100) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Hold Current (VD = 12V, Gate Open, Initiating Current = Latching Current (VD = 24V, IG = 5mA) MT2(+), G(+) MT2(-), G(-) MT2(+), G(-) 150mA) IH IL 1.0 2.0 2.0 2.0 mA mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGT 0.45 0.45 0.45 1.5 1.5 1.5 Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec, Gate Open, TJ = 110_C, f= 500 Hz, Snubber: CS = 0.01 mF, RS = 15W, see Figure 16.) Critical Rate of Rise of Off-State Voltage (VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110C) * Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (dv/dt)c 8.0 10 -- A/ms dv/dt 25 75 -- V/ms T C , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV), AVERAGE POWER DISSIPATION (WATTS) 110 25 DC 180 120 90 60 100 20 a = 30 and 60 90 15 a = CONDUCTION ANGLE 80 10 a = CONDUCTION ANGLE 70 60 90 180 DC 5 a = 30 0 2 4 6 8 10 IT(RMS), RMS ON-STATE CURRENT (AMPS) 12 0 0 2 4 6 8 10 IT(RMS), RMS ON-STATE CURRENT (AMPS) 12 Figure 1.0 RMS Current Derating Figure 2.0 Maximum On-State Power Dissipation Data Sheets 2 Motorola Thyristor Device Data MAC8S SERIES R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANOUS ON-STATE CURRENT (AMPS) 100 1 Typical @ TJ = 25 C Maximum @ TJ = 110C 10 ZqJC(t) = RqJC(t) r(t) 0.1 1 Maximum @ TJ = 25 C 0.1 0.5 1 2.5 3 3.5 4.5 1.5 2 4 5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5.5 6 0.01 0.1 1 10 100 t, TIME (ms) 1000 1@ 4 10 Figure 3.0 On-State Characteristics Figure 4.0 Transient Thermal Response 10 I L , LATCHING CURRENT (mA) I H , HOLDING CURRENT (mA) 8 25 20 6 MT2 NEGATIVE 4 MT2 POSITIVE 2 15 10 5 Q1 Q3 0 -40 -25 -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 0 -40 -25 -10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (C) Figure 5.0 Typical Holding Current Versus Junction Temperature Figure 6.0 Typical Latching Current Versus Junction Temperature 14 V GT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT (mA) 12 10 8 6 Q2 4 2 Q1 0 -40 -25 -10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (C) 80 95 110 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -40 -25 -10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (C) Q2 Q1 80 95 110 Q3 Q3 Q1 Q3 Figure 7.0 Typical Gate Trigger Current Versus Junction Temperature Motorola Thyristor Device Data 3 Figure 8.0 Typical Gate Trigger Voltage Versus Junction Temperature Data Sheets MAC8S SERIES 200 180 STATIC dv/dt (V/mS) 160 140 800V 120 100 90 80 60 100 200 300 400 500 600 700 800 RGK, GATE-MT1 RESISTANCE (OHMS) 900 1000 80 400 450 500 550 600 650 VPK, Peak Voltage (Volts) 120C 600V VPK = 400V TJ = 110C 120 STATIC dv/dt (V/mS) TJ = 100C 110 110C 130 RG - MT1 = 510W 100 700 750 800 Figure 9.0 Typical Exponential Static dv/dt Versus Gate-MT1 Resistance, MT2(+) Figure 10.0 Typical Exponential Static dv/dt Versus Peak Voltage, MT2(+) 130 120 STATIC dv/dt (V/mS) STATIC dv/dt (V/mS) 110 100 90 80 70 100 RG - MT1 = 510W 800V 105 110 115 TJ, Junction Temperature (C) 120 125 VPK = 400V 350 300 TJ = 100C 250 110C 200 120C 600V 150 RG - MT1 = 510W 100 400 450 500 550 600 650 VPK, Peak Voltage (Volts) 700 750 800 Figure 11.0 Typical Exponential Static dv/dt Versus Junction Temperature, MT2(+) Figure 12.0 Typical Exponential Static dv/dt Versus Peak Voltage, MT2(-) 350 300 300 VPK = 400V 250 STATIC dv/dt (V/mS) VPK = 400V 600V STATIC dv/dt (V/mS) 250 200 800V 150 100 50 100 600V 200 800V 150 RG - MT1 = 510W 105 110 115 TJ, Junction Temperature (C) 120 125 100 100 TJ = 110C 200 300 700 800 900 400 500 600 RGK, GATE-MT1 RESISTANCE (OHMS) 1000 Figure 13.0 Typical Exponential Static dv/dt Versus Junction Temperature, MT2(-) Figure 14.0 Typical Exponential Static dv/dt Versus Gate-MT1 Resistance, MT2(-) Data Sheets 4 Motorola Thyristor Device Data MAC8S SERIES (dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ms) 100 VPK = 400V 90C 10 1 2 tw 6f ITM 1000 100C f= tw (di/dt)c = VDRM 110C 1 5 10 15 20 25 30 (di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) 1 Figure 15.0 Critical Rate of Rise of Commutating Voltage 400 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL 20 mHY LL MEASURE I TRIGGER CONTROL RS 15W 1N4007 CHARGE CS 2 1N914 51 G 1 5 mF NON-POLAR CL - 0.01 mF + ADJUST FOR dv/dt(c) 400 V Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 16.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 Data Sheets MAC8S SERIES NOTES Data Sheets 6 Motorola Thyristor Device Data MAC8S SERIES NOTES Motorola Thyristor Device Data 7 Data Sheets MAC8S SERIES PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K STYLE 4: PIN 1. 2. 3. 4. H Z L V G D N R J MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 CASE 221A-06 (TO-220AB) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. To order literature by mail: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. To order literature electronically: MFAX: RMFAX0@email.sps.mot.com -TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com Data Sheets 8 *MAC8S/D* Motorola Thyristor Device Data MAC8S/D |
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