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| SPECIFICATION Device Name Type Name Spec. No. : : : IGBT module 2MBI300U2B-060 MS5F5617 Oct. 30 '03 Oct. 30 '03 S.Ogawa S.Miyashita Y.Seki K.Yamada MS5F 5617 1 a 13 H04-004-07b Revised Date Classification Ind. Content Records Applied date Issued date Drawn Checked Checked Approved Oct.-30 -'03 Enactment Revised VCE(sat), VF value(P4/13), VF carve(P11/ 13) and Warnings(P12/13, 13/ 13) S.Miyashita K.Yamada Y.Seki Jan.-16 -'04 Revision a Issued date S.Ogawa S.Miyashita K.Yamada T.Hosen MS5F 5617 2 a 13 H04-004-06b Type Name : 2MBI300U2B-060 PKG.No. M233 1. Outline Drawing ( Unit : mm ) LABEL 2. Equivalent circuit MS5F 5617 3 13 a H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Tstg Viso Mounting *2 Terminals *2 1 device Continuous 1ms Conditions Maximum Ratings 600 20 300 600 300 600 1000 150 -40 +125 AC : 1min. 2500 3.5 3.5 Units V V Collector current A Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 W VAC Nm Screw Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5) Terminals 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) R lead Conditions VGE = 0V VCE = 600V VCE = 0V VGE=20V VCE = 20V Ic = 300mA VGE=15V Ic = 300A Tj= 25 Tj=125 Tj= 25 Tj=125 Characteristics min. typ. max. 6.2 a a Units mA nA V 6.7 2.10 2.35 a 1.80 a 2.0 400 7.7 2.45 1.20 0.60 1.20 0.45 a V Turn-off time VCE=10V,VGE=0V,f=1MHz Vcc = 300V Ic = 300A VGE=15V Rg = 9.1 Tj= 25 Tj=125 Tj= 25 Tj=125 2.05 23.0 0.40 0.22 0.16 0.48 0.07 nF s a VGE=0V IF = 300A IF = 300A Forward on voltage 1.90 a 1.95 a 1.60 a 2.30 - V Reverse recovery time Lead resistance, terminal-chip * (*) 1.65 - 0.35 - s m 0.97 Biggest internal terminal resistance among arm. MS5F 5617 4 a 13 H04-004-03a 5. Thermal resistance characteristics Items Thermal resistance(1device) Contact Thermal resistance Symbols Rth(j-c) Rth(c-f) IGBT FWD Conditions min. - Characteristics typ. max. 0.025 0.125 0.23 - Units /W with Thermal Compound () This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Logo of production 2MBI300U2B-060 300A 600V Lot.No. 7.Applicable category Place of manufacturing (code) This specification is applied to IGBT Module named 2MBI300U2B-060 . 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 90% 0V VGE L 0V trr Irr 90% VCE Vcc Ic 90% RG VGE VCE Ic 0V 0A tr(i) tr ton toff Ic 10% 10% VCE tf 10% 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F 5617 5 a 13 H04-004-03a 11. Reliability test results Reliability Test Items Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time Test methods and conditions : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1) (Aug.-2001 edition) Test Method 401 Method Test Method 402 m ethod Test Method 403 Reference 1 Condition code B Mechanical Tests 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker Environment Tests Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s 2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Atmospheric pressure : 1.7 x 10 5 Pa Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100 +0 -5 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E 5 5 5 (0:1) (0:1) (0:1) 5 (0:1) 5 Temperature Cycle Test Method 105 5 (0:1) Dwell time Number of cycles 6 Thermal Shock Test temp. Test Method 307 m ethod Condition code A 5 (0:1) Low temp. 0 Used liquid : W ater with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles +5 -0 MS5F 5617 6 a 13 H04-004-03a Reliability Test Items Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1) (Aug.-2001 edition) Test Method 101 Test temp. Bias Voltage Bias Method Endurance Tests Tests Endurance Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test Method 101 5 (0:1) : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Test Method 102 Condition code C 5 (0:1) 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 106 5 (0:1) Failure Criteria Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others Broken insulation The visual sample LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5617 7 a 13 H04-004-03a Reliability Test Results Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A Test items Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 5 5 5 5 5 5 5 5 5 5 0 0 0 0 0 0 0 0 0 0 Environment Tests 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock 1 High temperature Reverse Bias Test Method 101 5 5 5 5 0 0 0 0 Endurance Tests 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 101 Test Method 102 Condition code C Test Method 106 MS5F 5617 8 a 13 H04-004-03a Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 / chip 750 VGE=20V 15V 600 Collector current : Ic [A] 12V 450 10V Collector current : Ic [A] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125 / chip 750 VGE=20V 15V 12V 10V 450 600 300 300 150 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 150 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 750 Tj=25 600 Collector current : Ic [A] Tj=125 Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 8 450 6 300 4 Ic=600A Ic=300A Ic=150A 5 10 15 20 25 150 2 0 0 1 2 3 4 0 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) 100.0 Capacitance : Cies Coes Cres [ nF ] Cies Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=300V Ic=300ATj= 25 10.0 Cres Coes 1.0 VGE VCE 0 500 1000 1500 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] MS5F 5617 9 13 a H04-004-03a Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9.1, Tj= 25 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9.1, Tj=125 1000 toff ton tr tf 1000 ton toff tr 100 100 tf 10 0 150 300 450 600 Collector current : Ic [ A ] 10 0 150 300 450 600 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=300A, VGE=15V, Tj= 25 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 25 ton toff 1000 tr Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9.1 Eoff(125) Eon(125) Eoff(25) Eon(25) 20 15 tf 100 10 5 Err(125) Err(25) 10 1.0 10.0 Gate resistance : Rg [ ] 100.0 0 0 150 300 450 600 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=300A, VGE=15V, Tj= 125 40 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 600 Collector current : Ic [ A ] 750 Reverse bias safe operating area (max.) +VGE=15V,-VGE15V, RG9.1 ,Tj125 30 20 Eoff 450 300 10 150 Err 0 1.0 10.0 Gate resistance : Rg [ ] 100.0 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] MS5F 5617 10 13 a H04-004-03a a Forward current vs. Forward on voltage (typ.) chip 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=9.1 750 Forward current : IF [ A ] 600 Tj=25 450 Tj=125 100 trr (125) Irr (125) Irr (25) trr (25) 300 150 0 0 1 2 3 Forward on voltage : VF [ V ] 10 0 150 300 450 600 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 Thermal resistanse : Rth(j-c) [/W ] FWD 0.100 IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] MS5F 5617 11 13 a H04-004-03a a Warnings This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. When electric power is connected to equipments, rush current will be flown through rectifying diode to charge 2 DC capacitor. Guaranteed value of the rush current is specified as I t (non-repetitive), however frequent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. 2 2 I t()I t If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA MS5F 5617 12 a 13 H04-004-03a - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) a - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE a Cautions Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability. - - If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. MS5F 5617 13 a 13 H04-004-03a |
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