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| DGS 17-03CS DGSK 36-03CS Gallium Arsenide Schottky Rectifier Second generation VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Type DGS 17-03CS Marking on product 17A300AS Single Circuit A C Package TO-252 AA A A TAB DGSK 36-03CS DGSK 36-03CS Common cathode A C A TO-263 AB A A TAB A = Anode, TAB = Cathode Diode Symbol VRRM/RSM IFAV IFAV IFSM Ptot Symbol VF IR IRM t rr CJ RthJC Data according to IEC 60747 and per diode unless otherwise specified Features Conditions Maximum Ratings 300 TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine TC = 25C Conditions IF = 7.5 A; IF = 7.5 A; VR = VRRM; VR = VRRM; TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C 29 17.5 20 34 V A A A W Characteristic Values min. typ. max. 1.5 1.1 0.25 1.4 23 10.7 1.9 V V 0.25 mA mA A ns pF 4.4 K/W GaAs Schottky Diode with Enhanced Barrier Height: * lowest operating forward voltage drop due to additional injection of minority carriers * high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off Surface Mount Packages: * Incorporating Single and Dual Diode Topologies * Industry Standard Package Outlines * Epoxy meets UL 94V-0 Applications IF = 5 A; -diF/dt = 150 A/s; VR = 150 V; TVJ = 125C VR = 150 V; TVJ = 125C Component Symbol TVJ Tstg Symbol Weight Conditions TO-252 TO-263 Conditions Maximum Ratings -55...+175 -55...+150 C C Switched Mode Power Supplies: * AC-DC converters * DC-DC converters with: * high switching frequency * high efficiency * low EMI for use e. g. in: * telecom * computer * automotive equipment Characteristic Values min. typ. max. 0.3 2 g g 435 IXYS reserves the right to change limits, Conditions and dimensions. (c) 2004 IXYS All rights reserved 1-2 DGS 17-03CS DGSK 36-03CS 100 200 100 IF A 10 CJ pF 1 TVJ = 125C 25C Outlines TO-252 AA 10 0.1 1 Anode 2 NC 3 Anode 4 Cathode TVJ = 125C Dim. 0.01 0.0 0.5 1.0 1.5 VF V 2.0 1 0.1 1 10 100 V 1000 VR Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage 10 TO-252 K/W 1 ZthJC Single Pulse TO-263 A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 0.1 Outlines TO-263 AB 0.01 DGS17-03CS 0.00001 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 3 typ. thermal impedance junction to case 1. 2. 3. 4. Gate Collector Emitter Collector Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 435 IXYS reserves the right to change limits, Conditions and dimensions. (c) 2004 IXYS All rights reserved 2-2 |
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