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PHOTOCOUPLER
PS2703-1
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE -NEPOC SOP MULTI PHOTOCOUPLER
DESCRIPTION
The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This is mounted in a plastic SOP (Small Outline Package) for high density applications. This package has shield effect to cut off ambient light. Series-
FEATURES
* High isolation voltage (BV = 3 750 Vr.m.s.) * High collector to emitter voltage (VCEO = 120 V) * SOP (Small Outline Package) type * Each isolated channel per package * High-speed switching (tr, tf = 10 s TYP.) * Taping product number: PS2703-1-F3, F4 * UL approved: File No. E72422 (S) * VDE0884 approved (Option)
APPLICATIONS
* Hibrid IC * Telephone/FAX * FA/OA equipment * Programmable logic controllers * Power supply
ORDERING INFORMATION (Solder Contains Lead)
Part Number PS2703-1 Package 4-pin SOP Safety Standard Approval Standard specification products * UL approved PS2703-1-V 4-pin SOP VDE0884 specification products (Option)
ORDERING INFORMATION (Pb-Free)
Part Number PS2703-1-A Package 4-pin SOP Safety Standard Approval Standard specification products * UL approved PS2703-1-V-A 4-pin SOP VDE0884 specification products (Option)
Document No. PN10242EJ01V0DS (1st edition) (Previous No. P11308EJ6V0DS00) Date Published February 2003 CP(K)
The mark
shows major revised points.
PS2703-1
PACKAGE DIMENSIONS (in millimeters)
PS2703-1
4.00.5
TOP VIEW
4 3 1. Anode 2. Cathode 3. Emitter 4. Collector
1
2
7.00.3 4.4
2.1.0.2
0.10.1
2.54
0.15 +0.10 -0.05
2.0
0.50.3
0.4 +0.10 -0.05
0.25 M
2
Data Sheet PN10242EJ01V0DS
PS2703-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified)
Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current Transistor
*1
Symbol IF VR
Ratings 50 6 0.8 80 1 120 6 30 1.5 150 3 750 -55 to +100 -55 to +150
Unit mA V mW/C mW A V V mA mW/C mW Vr.m.s. C C
PD/C
PD IFP VCEO VECO IC
Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation
PC/C
PC BV TA Tstg
Isolation Voltage
*2
Operating Ambient Temperature Storage Temperature
*1 PW = 100 s, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output
Data Sheet PN10242EJ01V0DS
3
PS2703-1
ELECTRICAL CHARACTERISTICS (TA = 25 C)
Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Dark Current Current Transfer Ratio (IC/IF)
*1
Symbol VF IR Ct ICEO CTR IF = 5 mA VR = 5 V
Conditions
MIN.
TYP. 1.1
MAX. 1.4 5
Unit V
A
pF
V = 0 V, f = 1 MHz IF = 0 mA, VCE = 120 V IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V 50 10
30 100 150 80 0.3 10
11
nA %
400
Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time
*2
VCE (sat) RI-O CI-O tr tf
IF = 10 mA, IC = 2 mA VI-O = 1 kVDC V = 0 V, f = 1 MHz VCC = 5 V, IC = 2 mA, RL = 1 k
V
0.4 10 10
pF
s
*2
*1 CTR rank
CTR rank K CTR (%) 200 to 400 80 to L 100 to 300 25 to M 50 to 150 10 to Conditions IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V
*2 Test circuit for switching time
Pulse Input
IF
VCC
PW = 100 s Duty Cycle = 1/10
In monitor
50
VOUT RL = 1 k
4
Data Sheet PN10242EJ01V0DS
PS2703-1
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified)
DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE
200
100
Diode Power Dissipation PD (mW)
75
150
1.5 mW/C
50
100
25
50
0
25
50
75
100
0
25
50
75
100
Ambient Temperature TA (C)
Ambient Temperature TA (C)
FORWARD CURRENT vs. FORWARD VOLTAGE
100
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
10
10 mA
5 mA 4 mA
Forward Current IF (mA)
10
TA = +100 C +75 C +50 C
Collector Current IC (mA)
6
IF =
8
3 mA
1
0.1
+25 C 0 C -25 C -55 C
4
2 mA
2
1 mA 0.5 mA
0.01 0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current ICEO (nA)
COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE
10 5
Collector Current IC (mA)
50 000 10 000 5 000 1 000 500 100 50 10 5 1 0.5 0.1 -60 -40 -20 0 20 40 60 80 100
VCE = 40 V 24 V 10 V
IF = 25 mA
10 mA 5 mA 2.5 mA
2 mA
1.5 mA 1 0.5 0.5 mA 1 mA
0.1 0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature TA (C)
Collector Saturation Voltage VCE (sat) (V)
Data Sheet PN10242EJ01V0DS
5
PS2703-1
NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT
300 VCE = 5 V
Normalized Current Transfer Ratio CTR
1.2 1.0 0.8 0.6 0.4 0.2
Current Transfer Ratio CTR (%)
;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;
Normalized to 1.0 at TA = 25 C, IF = 5 mA, VCE = 5 V -25 0 25 50 75 100
250 200 150 100 50 0 0.1
0.0 -55
0.5
1
5
10
50
Ambient Temperature TA (C)
Forward Current IF (mA)
SWITCHING TIME vs. LOAD RESISTANCE
100 VCC = 5V, IC = 2 mA tf tr 1.0 1.2
FREQUENCY RESPONSE
Switching Time t ( s)
Normalized Gain GV
10
td ts
0.8 0.6 0.4 0.2
RL = 1 k 510 300 100
1
0.1 10
100
1k
10 k
0.0 0.5
1
5
10
50 100
500
Load Resistance RL ()
Frequency f (kHz)
SWITCHING TIME vs. LOAD RESISTANCE
1 000 1.2
LONG TIME CTR DEGRADATION
CTR Dgradation (Relative Value)
IF = 5 mA, VCC = 5 V, CTR = 90 %
1.0 0.8 0.6 0.4 0.2 0.0 IF = 1 mA, TA = 25 C IF = 5 mA, TA = 25 C IF = 20 mA, TA = 25 C IF = 20 mA, TA = 60 C
Switching Time t ( s)
100
tf
ts 10 tr 1 td
0.1
1
10
100
1
102
103
104
105
106
Load Resistance RL (k)
Time (Hr)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10242EJ01V0DS
PS2703-1
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.00.05 4.00.1
1.750.1
1.5+0.1 -0
2.9 MAX.
5.50.05
12.00.2
1.550.1 8.00.1
7.40.1
4.60.1
2.40.1
0.3
Tape Direction
PS2703-1-F3 PS2703-1-F4
Outline and Dimensions (Reel)
2.00.5
3302.0
2.00.5 13.00.2
R 1.0
21.00.8
13.00.2
1001.0
13.51.0 17.51.0
Packing: 3 500 pcs/reel
11.9 to 15.4 Outer edge of flange
Data Sheet PN10242EJ01V0DS
7
PS2703-1
NOTES ON HANDLING 1. Recommended soldering conditions
(1) Infrared reflow soldering * Peak reflow temperature * Time of peak reflow temperature * Time of temperature higher than 220C * Time to preheat temperature from 120 to 180C * Number of reflows * Flux 260C or below (package surface temperature) 10 seconds or less 60 seconds or less 12030 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
Package Surface Temperature T (C)
(heating) to 10 s
260C MAX. 220C
to 60 s
180C
120C
12030 s (preheating)
Time (s)
(2) Wave soldering * Temperature * Time * Preheating conditions * Number of times * Flux 260C or below (molten solder temperature) 10 seconds or less 120C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler's input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings.
8
Data Sheet PN10242EJ01V0DS
PS2703-1
USAGE CAUTIONS
1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10242EJ01V0DS
9
PS2703-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Application classification (DIN VDE 0109) for rated line voltages 300 Vr.m.s. for rated line voltages 600 Vr.m.s. Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 x UIORM, Pd < 5 pC Test voltage (partial discharge test procedure b for all devices test) Upr = 1.6 x UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) Clearance distance Creepage distance Comparative tracking index (DIN IEC 112/VDE 0303 part 1) Material group (DIN VDE 0109) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25 C VIO = 500 V dc at TA MAX. at least 100 C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 C (Tsi) Ris MIN. 10
9
Symbol
Speck
Unit
IV III 55/100/21
UIORM Upr Upr
710 850 1 140
Vpeak Vpeak Vpeak
UTR
6 000 2 >5 >5
Vpeak
mm mm
CTI
175 III a
Tstg TA
-55 to +150 -55 to +100
C C
Ris MIN. Ris MIN.
10 10
12 11

Tsi Isi Psi
150 200 300
C mA mW
10
Data Sheet PN10242EJ01V0DS
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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