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| RB160A90 Diodes Schottky barrier diode RB160A90 Applications General rectification Dimensions (Unit : mm) CATHODEBAND 0.60.1 Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 291 3.00.2 8 291 2.50.2 ROHM : MSR Manufacture Date Construction Silicon epitaxial planar Taping specifications (Unit : mm) BROWN H2 A BLUE E Symbol Standard dimension value(mm) B C L1 H1 F L2 D T-31 52.41.5 +0.4 T-32 26.0 0 T-31 5.00.5 B T-31 5.00.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A1.2 E T-32 1/2A0.4 T-31 0.7 T-32 0.2 max. T-31 H1 6.00.5 T-32 T-31 H2 5.00.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. H1(6mm)BROWN Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak t=100s Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1) Mounted on epoxy board. 180Half sine wave Limits 90 90 1 50 150 -55 to +150 Unit V V A A Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.54 5 Typ. 0.64 5.00 Max. 0.73 100 Unit V A kV Conditions IF=1.0A VR=90V C=100pF,R=1.5k forward and reverse : 1 time Rev.D 1/3 RB160A90 Diodes Electrical characteristic curves (Ta=25C) Ta=150 Ta=125 1 Ta=75 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125 0.1 Ta=150 Ta=25 Ta=-25 10000 1000 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25 1000 f=1MHz f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 100 0.01 Ta=-25 10 0.001 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 650 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) Ta=25 IF=1A n=30pcs 100 90 80 70 60 50 40 30 20 10 AVE:478.3nA :36.1612nA 200 Ta=25 Ta=25 VR=90V VR=100V n=30pcs n=30pcs 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 170 160 150 140 130 120 110 100 IR DISPERSION MAP Ct DISPERSION MAP AVE:149.6pF Ta=25 f=1MHz VR=0V n=10pcs 640 630 620 AVE:632.1mV 610 AVE:4.655uA 600 VF DISPERSION MAP 0 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) 30 100 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 50 25 20 100 15 AVE:7.40ns 10 50 AVE:56.0A 0 IFSM DISRESION MAP 5 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 150 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) t 100 1000 Mounted on epoxy board 2 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) IF=0.5A IM=1mA 100 time(ms) td=300us Rth(j-l) Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1.5 DC 1 Sin(180) D=1/2 Rth(j-c) 10 50 0.5 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 1 0.001 0 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2 Rev.D 2/3 RB160A90 Diodes 1 3 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 Sin(180) 0A 0V t DC T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=45V Tj=150 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150 Sin(180) 3 0A 0V t DC T Io VR D=t/T VR=45V Tj=150 0.6 DC 0.4 D=1/2 0.2 Sin(180) 0 10 20 30 40 50 60 70 80 90 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:10.7kV AVE:1.70kV ESD DISPERSION MAP AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) Rev.D 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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