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| 2.10 3rd Generation DIP and Mini-DIP-IPM (Dual-in-line Package Intelligent Power Modules) Features: * Employing 5th generation planar IGBT chips with 0.6m design rule or CSTBTTM technology with superior loss performance * Ultra compact dual or single-in-line transfer mold package (compatible with 2nd generation) * Including driver and protection circuitry (UV, SC) * DIP-IPM with reduction of thermal resistance by 20% * 2500Vrms isolation voltage * High-active interface logic for direct connection to a 3V or 5V MCU * Highest reliability and optimised EMI performance * Available from 3A to 50A / 600V for motor ratings from 0.1kW to 3.7kW * Optional with open emitter topology for vector control * All Mitsubishi DIP and Mini-DIP-IPMs have lead-free terminals * From January 2006 onwards, all DIP and Mini-DIP-IPMs will be supplied with completely lead-free technology Line-up DIP, Mini-DIP & SIP-IPM 2. Type Isolation Voltage (V) VCES (V) Motor Rating (kW) 0.1 0.2 0.4 0.75 1.5 PS21065 2.2 PS21067 3.7 PS21069 Super-DIP DIP 2500 Mini-DIP PS21661-FR PS21661-RZ 600 PS21562-P PS21562-SP* PS21563-P PS21563-SP* PS21864-P PS21564-P PS21564-SP* PS21865-P PS21867-P PS21869-P SIP * Open Emitter Topology Electrical Characteristics Type Number Thermal & Mechanical Characteristics VCES (V) 600 600 600 600 600 600 600 600 600 600 600 600 600 600 Applicable Motor Ratings (kW) 0.2 0.4 0.75 0.75 1.5 2.2 3.7 0.2 0.4 0.75 1.5 2.2 3.7 0.1 IC (A) 5 10 15 15 20 30 50 5 10 15 20 30 50 3 fC (kHz) PS21562-P PS21563-P PS21564-P PS21864-P PS21865-P PS21867-P PS21869-P PS21562-SP PS21563-SP PS21564-SP PS21065 PS21067 PS21069 PS21661-RZ/-FR Typ. Max. Mini-DIP-IPM 600 Volt 20 2500 1.6 2.1 1.20 0.30 0.40 1.30 20 2500 1.6 2.1 1.20 0.30 0.40 1.40 20 2500 1.45 1.95 1.20 0.30 0.40 1.50 DIP-IPM 600 Volt 20 2500 1.7 2.2 1.50 0.30 0.50 1.40 20 2500 1.6 2.1 1.30 0.30 0.40 1.60 20 2500 1.6 2.1 1.30 0.30 0.40 1.70 20 2500 1.5 2.0 1.30 0.30 0.40 2.00 Mini-DIP-IPM 600 Volt With Open Emitter Topology 20 2500 1.6 2.1 1.20 0.30 0.40 1.30 20 2500 1.6 2.1 1.20 0.30 0.40 1.40 20 2500 1.45 1.95 1.20 0.30 0.40 1.50 Super-DIP-IPM 600 Volt With Open Emitter TopologySIP-IPM 600 Volt 20 2500 1.6 2.1 1.30 0.30 0.40 1.60 20 2500 1.6 2.1 1.30 0.30 0.40 1.70 20 2500 1.5 2.0 1.30 0.30 0.40 2.00 SIP-IPM 600 Volt 15 2500 1.6 2.15 0.85 0.20 0.35 1.00 Isolation Voltage (V) VCE(sat) @ Tj=25C (V) ton (s) Typical Switching Times trr tc(on) toff tc(off) (s) (s) (s) (s) 0.50 0.50 0.50 0.50 0.50 0.50 0.65 0.50 0.50 0.50 0.50 0.50 0.65 0.55 IGBT Rth(j-f) (C/W) 6.0 5.0 4.5 2.30 1.90 1.65 1.42 6.0 5.0 4.5 1.90 1.65 1.42 9.0 Diode Rth(j-f) (C/W) 6.5 6.5 6.5 3.2 3.0 3.0 2.0 6.5 6.5 6.5 2.85 2.55 2.30 9.0 PackageNo. D4 D4 D4 D3 D3 D3 D3 D5 D5 D5 D6* D6* D6* SIP1 * Package drawing D6 see under 2.8. 1200V DIP-IPM, p. 50 54 Power Devices General Catalogue 2005 2.10 3rd Generation DIP and Mini-DIP-IPM Package D3 Package D4 2. Package D5 Package SIP1 Dimensions in mm www.mitsubishichips.com * www. mitsubishielectric.de 55 |
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