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| STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESHTM IGBT TYPE STGD3NB60HD s s s s s VCES 600 V VCE(sat) (Max) @25C < 2.8 V IC @100C 6A 3 1 s HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STGD3NB60HDT4 MARKING GD3NB60HD PACKAGE DPAK PACKAGING TAPE & REEL September 2003 1/10 STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 20 10 6 24 50 0.4 -55 to 150 Unit V V V A A A W W/C C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.5 100 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 50 100 100 Typ. Max. Unit V A A nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tj =125C Min. 3 2.4 1.9 Typ. Max. 5 2.8 Unit V V V 2/10 STGD3NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Conditions VCE = 25 V , IC =3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 2.4 235 33 6.6 21 6 7.6 12 27 Max. Unit S pF pF pF nC nC nC A VCE = 480V, IC = 3 A, VGE = 15V Vclamp = 480 V , Tj = 125C RG = 10 Test Conditions VCC = 480 V, IC = 3 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 3 A RG=10 VGE = 15 V,Tj = 125C SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Min. Typ. 5 11 400 77 Max. Unit ns ns A/s J SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 3 A, RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC =3 A, RGE = 10 , VGE = 15 V Min. Typ. 76 36 53 77 33 100 180 82 58 110 88 165 Max. Unit ns ns ns ns J J ns ns ns ns J J Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 1.5 A If = 1.5 A, Tj = 125 C If = 1.5 A ,VR = 400 V, Tj =125C, di/dt = 100 A/s 1.6 1.3 95 110 2.7 Test Conditions Min. Typ. Max. 1.5 12 2.1 Unit A A V V ns nC A 3/10 STGD3NB60HD Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature 4/10 STGD3NB60HD Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance 5/10 STGD3NB60HD Total Switching Losses vs Temperature Emitter-collector Diode Characteristics Total Switching Losses vs Collector Current Switching Off Safe Operating Area 6/10 STGD3NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/10 STGD3NB60HD TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 8/10 STGD3NB60HD DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 1.85 7.6 2.75 4.1 8.1 2.1 16.3 BASE QTY 2500 mm MIN. 6.8 10.4 MAX. 7 10.6 12.1 1.6 inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 * on sales type 9/10 STGD3NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 10/10 |
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