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| STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 General features VCS(ON) 1.3 V IC 50 A RCS(ON) High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch up to 150 kHz Ultra low Ciss Low dynamic VCS(ON) Applications Industrial converters Welding Description The STI50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STI50DE100 is designed for use in industrial converters and/or welding equipment. Order codes Part Number STI50DE100 Marking STI50DE100 Package I4PAC-4L Packing Tube January 2007 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. W 0.026 Internal schematic diagrams Rev 1 (R) Preliminary Data 4 1 2 3 I4PAC-4L 1/11 www.st.com 11 STI50DE100 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STI50DE100 Electrical ratings 1 Electrical ratings Table 1. Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot VINS Tstg TJ Absolute maximum rating Parameter Collector-source voltage (V BS = VGS = 0 V) Base-source voltage (IC = 0, V GS = 0 V) Source-base voltage (IC = 0, V GS = 0 V) Gate-source voltage Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25C Insulation withstand voltage (RMS) from all three leads to external heatsink Storage temperature Max. operating junction temperature Value 1000 40 12 Unit V V V V A A A A W V C C 20 50 150 10 50 83 2500 -40 to 150 150 Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case __max Value 1.5 Unit C/W 3/11 Electrical characteristics STI50DE100 2 Electrical characteristics (Tcase = 25C unless otherwise specified) Table 3. Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) Electrical characteristics Parameter Collector-source current (VBS = V GS = 0) Base-source current (IC = 0, VGS = 0) Source-base current (IC = 0, VGS = 0) Gate-source leakage Collector-source ON voltage DC current gain Test Conditions VCE = 1000V VBS(OS) = 40V VSB(OS) = 10V VGS = 20V VGS = 10V IC = 50A IB = 10A VGS = 10V_IC = 30A IB = 3A VGS = 10V_IC = 50A VCS = 1V VGS = 10V_IC = 30A VCS = 1V VGS = 10V_ IC = 50A IB = 10A VGS = 10V_ IC = 30A_ IB = 3A VBS = VGS ______IB = 250A VCS = 25V ______f = 1MHz VGS = VCB = 0 VCS = 25V _____VGS = 10V VCB = 0 VClamp = 800V tp = 4s IC = 50A IC = 25A IB = 5A VGS = 10V 3 3 6 2.2 1.4 3.7 2500 4.5 1.3 1.1 7 13 V V V pF Min. Typ. Max. Unit 100 10 100 500 A A A nA V V VCS(ON) hFE VBS(ON) VGS(th) CISS QGS(tot) ts tf Base Source ON voltage Gate threshold voltage Input capacitance Gate-source charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber Collector-source dynamic voltage (500ns) Collector-source dynamic voltage 60 nC RG = 47 650 10 ns ns (see figure 13) ts tf IC = 25A IB = 2.5A VGS = 10V VClamp = 800V RG = 47 tp = 4s 430 6 ns ns (see figure 13) 1000 VCSW RG = 47 hFE = 5A IC = 35A VCC = VClamp = 300V V GS = 10V RG = 47 IC = 5A IB = 5A IBpeak = IC = 25A RG = 47 tpeak = 500ns IB = 5A VCC = VClamp = 300V V GS = 10V IC = 5A V VCS(dyn) 5.5 V VCS(dyn) 4.8 V (1 s) IBpeak = IC = 25A tpeak = 500ns 4/11 STI50DE100 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. DC current gain Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage Figure 5. Base-source On voltage Figure 6. Base-source On voltage 5/11 Electrical characteristics STI50DE100 Figure 7. Reverse biased safe operting Figure 8. area Gate threshold voltage vs temperature Figure 9. Dynamic collector-emitter saturation voltage Figure 10. Inductive load switching time Figure 11. Inductive load switching time 6/11 STI50DE100 Electrical characteristics 2.2 Test circuits Figure 12. Static VCS(ON) test circuit Figure 13. Inductive load switching and RBSOA test circuit Figure 14. Inductive load turn-on switching and dynamic V CS(ON) test circuit 7/11 Package mechanical data STI50DE100 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STI50DE100 Package mechanical data ISOPLUS I4PAC-4L MECHANICAL DATA DIM. A A1 A2 b b1 b2 b3 c D E e L L1 Q R S T U 19.81 2.03 5.33 3.81 16.97 15.24 1.65 mm. MIN. 4.83 2.59 1.17 1.14 1.60 2.54 1.47 0.51 20.62 19.56 3.81 20.83 2.59 5.97 4.57 17.48 15.75 2.03 TYP MAX. 5.21 3 1.40 1.40 1.83 2.79 1.73 0.74 21.13 20.29 9/11 Revision history STI50DE100 4 Revision history Table 4. Date 10-Jan-2007 Revision history Revision 1 Initial release. Changes 10/11 STI50DE100 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11 |
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