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| STP14NF12 STP14NF12FP N-channel 120V - 0.16 - 14A - TO-220/TO-220FP Low gate charge STripFETTM II Power MOSFET General features Type STP14NF12 STP14NF12FP VDSS 120V 120V RDS(on) <0.18 <0.18 ID 14A 14A 3 1 2 1 3 2 Exceptional dv/dt capability Application oriented characterization TO-220 TO-220FP Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements Internal schematic diagram Applications Switching application Order codes Part number STP14NF12 STP14NF12FP Marking P14NF12 P14NF12 Package TO-220 TO-220FP Packaging Tube Tube August 2006 Rev 2 1/14 www.st.com 14 Contents STP14NF12 - STP14NF12FP Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP14NF12 - STP14NF12FP Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter TO-220 Value TO-220FP 120 120 20 14 9 56 60 0.4 9 60 -2500 -55 to 175 Max. operating junction temperature 8.5 6 34 25 0.17 V V V A A A W W/C V/ns mJ V C Unit VDS VDGR VGS ID ID IDM (1) Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Ptot (2) (3) dv/dt EAS Peak diode recovery voltage slope Single pulse avalanche energy Insulation withstand voltage (DC) Storage temperature VISO Tstg Tj 1. Pulse width limited by safe operating area. 2. ISD 14A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting Tj = 25 C, ID = 14A, VDD = 50V Table 2. Thermal data TO-220 TO-220FP 6 62.5 300 C/W C/W C Rthj-case Rthj-amb TJ Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 2.5 3/14 Electrical characteristics STP14NF12 - STP14NF12FP 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 7A 2 3 0.16 Min. 120 1 10 100 4 0.18 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 4. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 7A Min. Typ. 4 460 70 30 16 25 32 8 15.5 3.7 4.7 21 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VDD = 50V, ID = 7A RG = 4.7 VGS = 10V (see Figure 15) VDD = 80V, ID = 14A, VGS = 10V (see Figure 16) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 4/14 STP14NF12 - STP14NF12FP Electrical characteristics Table 5. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 14A, VGS = 0 92 230 5 Test conditions Min. Typ. Max. 14 56 1.5 Unit A A V ns nC A ISD = 14A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 50V, Tj = 150C Reverse recovery current (see Figure 17) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 5/14 Electrical characteristics STP14NF12 - STP14NF12FP 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/14 STP14NF12 - STP14NF12FP Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics STP14NF12 - STP14NF12FP Figure 14. Normalized BVDSS vs temperature 8/14 STP14NF12 - STP14NF12FP Test circuit 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/14 Package mechanical data STP14NF12 - STP14NF12FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STP14NF12 - STP14NF12FP Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 E L2 L5 123 L4 G 11/14 Package mechanical data STP14NF12 - STP14NF12FP TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 12/14 STP14NF12 - STP14NF12FP Revision history 5 Revision history Table 6. Date 09-Sep-2004 09-Aug-2006 Revision history Revision 1 2 Complete version New template, no content change Changes 13/14 STP14NF12 - STP14NF12FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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