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| EGF1A - EGF1D EGF1A - EGF1D Features * * * Low forward voltage drop. Low profile package. Fast switching for high efficiency. 3.93 3.73 0.181 (4.597) 0.157 (3.988) 0.062 (1.575) 0.055 (1.397) 2 1 0.114 (2.896) 0.098 (2.489) 0.208 (5.283) 0.188 (4.775) 1.67 1.47 + 2.38 2.18 5.49 5.29 Minimum Recommended Land Pattern SMA/DO-214AC COLOR BAND DENOTES CATHODE 0.096 (2.438) 0.078 (1.981) 0.060 (1.524) 0.030 (0.762) 0.008 (0.203) 0.002 (0.051) 0.012 (0.305) 0.006 (0.152) 1.0 Ampere High Efficiency Glass Passivated Rectifier Absolute Maximum Ratings* Symbol IO if(surge) TA = 25C unless otherwise noted Parameter Average Rectified Current @ T L = 100C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient ** Thermal Resistance, Junction to Case ** Storage Temperature Range Operating Junction Temperature Value 1.0 Units A 30 2.0 13 85 30 -65 to +175 -65 to +175 A W mW/C C/W C/W C C PD RJA RJC Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Parameter TA = 25C unless otherwise noted Device 1A 1B 100 70 100 10 100 1.0 50 15 1C 150 105 150 1D 200 140 200 50 35 50 Units V V V A A V ns pF Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25C TA = 125C Maximum Forward Voltage @ 1.0 A Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 1998 Fairchild Semiconductor Corporation EGF1A-EGF1D, Rev. B EGF1A - EGF1D Typical Characteristics Forward Current Derating Curve 1.6 FORWARD CURRENT (A) Forward Characteristics 100 FORWARD CURRENT (A) TJ = 25 C A Pulse Width = 300S 2% Duty Cycle 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 LEAD TEMPERATURE ( C) 150 175 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 10 1 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) 1.4 1.6 Non-Repetitive Surge Current PEAK FORWARD SURGE CURRENT (A) 40 Reverse Characteristics 1000 REVERSE CURRENT ( A) T A = 100 C 30 100 20 10 T J = 25 C A 10 1 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Typical Junction Capacitance 60 JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0.1 0.5 1 2 5 10 20 50 100 REVERSE VOLTAGE (V) 500 50 NONINDUCTIVE 50 NONINDUCTIVE +0.5A (-) trr DUT 50V (approx) 50 NONINDUCTIVE Pulse Generator (Note 2) (+) OSCILLOSCOPE (Note 1) 0 -0.25A NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram EGF1A-EGF1D, Rev. B SMA/DO-214AC Package Dimensions SMA/DO-214AC (FS PKG Code P5) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.064 0.181 (4.597) 0.157 (3.988) 0.062 (1.575) 0.055 (1.397) 3.93 3.73 2 1 0.114 (2.896) 0.098 (2.489) 1.67 1.47 + 2.38 2.18 5.49 5.29 0.208 (5.283) 0.188 (4.775) 0.096 (2.438) 0.078 (1.981) Minimum Recommended Land Pattern 0.060 (1.524) 0.030 (0.762) 0.008 (0.203) 0.002 (0.051) 0.012 (0.305) 0.006 (0.152) August 1999, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D |
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