 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MKP3V110/D Sidac High Voltage Bilateral Triggers . . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: * * * * * High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators MKP3V110* MKP3V120* MKP3V130* *Motorola preferred devices SIDACs 1 AMPERE RMS 100 thru 135 VOLTS MT1 MT2 CASE 267-03 SURMETIC 50 PLASTIC AXIAL MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Repetitive Breakover Voltage MKP3V110 MKP3V120 MKP3V130 Off-State Repetitive Voltage On-State RMS Current On-State Surge Current (Non-repetitive) (60 Hz One Cycle Sine Wave, Peak Value) Operating Junction Temperature Range Storage Temperature Range Lead Solder Temperature (Lead Length 1/16 from Case, 10 s Max) VDRM IT(RMS) ITSM TJ Tstg -- Symbol V(BO) 100 110 120 -- -- -- -40 -40 -- 120 130 140 90 1 20 +125 +150 +230 Volts Amp Amps C C C Min Max Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Lead (Lead Length = 3/8) Symbol RJL Min -- Max 15 Unit C/W Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data (c) Motorola, Inc. 1995 1 MKP3V110 MKP3V120 MKP3V130 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; both directions) Characteristic Breakover Current Repetitive Peak Off-State Current (60 Hz Sine Wave, VD = 90 V) Forward "On" Voltage (ITM = 1 A Peak) Dynamic Holding Current Switching Resistance Maximum Rate of Change of On-State Current Symbol I(BO) IDRM VTM IH RS di/dt Min -- -- -- -- 0.1 -- Typ -- -- 1.1 -- -- 50 Max 200 10 1.5 100 -- -- Unit A A Volts mA k A/s CURRENT DERATING T C MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 130 TA MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (C) 120 110 = Conduction Angle Tj Rated = 125C 140 120 100 80 60 40 20 0 0 0.2 = 180 = Conduction Angle Tj Rated = 125C 100 90 80 0 0.2 0.4 = 180 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 2.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 2.0 Figure 1. Maximum Case Temperature PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) Figure 2. Maximum Ambient Temperature I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) 1.0 0.8 0.6 0.4 0.3 0.2 25C 125C 1.25 1.0 0.75 = Conduction Angle Tj Rated = 125C = 180 0.50 0.25 0 0 0.4 0.6 0.8 0.2 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 1.0 0.1 0.8 0.9 1.0 1.1 1.2 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 1.3 Figure 3. Typical Forward Voltage Figure 4. Power Dissipation 2 Motorola Thyristor Device Data MKP3V110 MKP3V120 MKP3V130 THERMAL CHARACTERISTICS 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.2 ZJL(t) = RJL * r(t) TJL = Ppk RJL[r(t)] where: LEAD LENGTH = 1/4 tp TIME The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. TJ = TL + TJL 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (ms) 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k Figure 5. Thermal Response TYPICAL CHARACTERISTICS 100 I(BO) , BREAKOVER CURRENT ( A) 90 80 70 60 50 40 30 20 10 0 -60 I H , HOLDING CURRENT (mA) -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 250 225 200 175 150 125 100 75 50 25 0 -60 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 Figure 6. Breakover Current Figure 7. Holding Current ITM IH VTM Slope = RS IS IDRM VS I(BO) V(BO) VDRM RS +( *VS ) ( IS *I(BO) ) V (BO) Figure 8. V-1 Characteristics Motorola Thyristor Device Data 3 MKP3V110 MKP3V120 MKP3V130 PACKAGE DIMENSIONS B D 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 1: PIN 1. CATHODE 2. ANODE DIM A B D K INCHES MIN MAX 0.370 0.380 0.190 0.210 0.048 0.052 1.000 --- MILLIMETERS MIN MAX 9.40 9.65 4.83 5.33 1.22 1.32 25.40 --- K A K 2 CASE 267-03 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 *MKP3V110/D* Motorola Thyristor Device Data MKP3V110/D |
Price & Availability of MKP3V120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |