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| STS4DNFS30L N-CHANNEL 30V - 0.044 - 4A SO-8 STripFETTM II MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 30 V SCHOTTKY IF(AV) 3A RDS(on) < 0.055 VRRM 30 V ID 4A VF(MAX) 0.51 V SO-8 DESCRIPTION This product associates the latest low voltage STripFETTM in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 30 30 16 4 2.5 16 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM dv/dt July 2002 Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL = 125C = 0.5 tp = 10 ms Sinusoidal tp = 2 s F=1 kHz tp = 100 s Value 30 20 3 75 1 1 10000 Unit V A A A A A V/s 1/8 (*)Pulse width limited by safe operating area STS4DNFS30L THERMAL DATA Rthj-amb Tstg Tl (*)Thermal Resistance Junction-ambient MOSFET Storage Temperature Range Junction Temperature (*) Mounted on FR-4 board (Steady State) 62.5 -55 to 150 -55 to 150 C/W C C MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 16 V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 2 A VGS = 5V, ID = 2 A Min. 1 0.044 0.051 0.055 0.065 Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V , ID = 2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5 330 90 40 Max. Unit S pF pF pF 2/8 STS4DNFS30L ELECTRICAL CHARACTERISTICS (CONTINUED) 1. SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 2 A RG = 4.7 VGS = 5 V (see test circuit, Figure 1) VDD = 24 V, ID = 4 A, VGS = 5 V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 15 V, ID = 2 A, RG = 4.7, VGS = 5 V (see test circuit, Figure 1) Min. Typ. 25 22 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100A/s, VDD = 15 V, Tj = 150C (see test circuit, Figure 3) 35 25 1.4 Test Conditions Min. Typ. Max. 4 16 1.2 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS4DNFS30L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS4DNFS30L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS4DNFS30L Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STS4DNFS30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS4DNFS30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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