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| Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1321A I Features * Low collector to emitter saturation voltage VCE(sat) * Allowing supply with the radial taping 6.90.1 0.15 0.7 4.0 1.05 2.50.1 (1.45) 0.05 0.8 0.65 max. 1.0 0.45-0.05 +0.1 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 7 1 500 600 150 -55 to +150 Unit V V V A mA mW C C 1 2 3 0.45-0.05 2.50.5 2.50.5 +0.1 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package 1.20.1 0.65 max. 0.45+ 0.1 - 0.05 2.50.1 (HW Type) I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 No-rank 85 to 340 VCBO VCEO VEBO hFE1 *2 hFE2 *1 VCE(sat) fT Cob Conditions VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 60 50 7 85 40 90 0.35 200 6 15 0.6 V MHz pF 340 Min Typ Max 0.1 1 Unit A A V V V Product of no-rank is not classified and have no indication for rank. 14.50.5 0.85 3.50.1 0.8 1 2SD1992A PC Ta 800 Transistors IC VCE 800 700 Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 0 3 mA 2 mA 1 mA 800 700 IC IB VCE = 10 V Ta = 25C Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 600 500 Collector current IC (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta = 75C 25C -25C VBE(sat) IC 100 hFE IC 300 VCE = 10 V Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 30 Forward current transfer ratio hFE 250 Ta = 75C 200 25C -25C 10 3 25C 1 Ta = 75C -25C 0.3 0.1 0.03 0.01 0.01 0.03 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT IE 240 12 Cob VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB = 10 V Ta = 25C IE = 0 f = 1 MHz Ta = 25C 120 VCER RBE IC = 2 mA Ta = 25C 100 Transition frequency fT (MHz) 200 10 160 8 80 120 6 60 80 4 40 40 2 20 0 -1 -2 -3 -5 -10 -20-30 -50 -100 0 0 1 2 3 5 10 20 30 50 100 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistors ICEO Ta 104 VCE = 10 V 2SD1992A 103 ICEO (Ta) ICEO (Ta = 25C) 102 10 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (C) 3 |
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