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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3510 2SK3510-S 2SK3510-ZJ 2SK3510-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
* Super low on-state resistance: RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A) * Low Ciss: Ciss = 8500 pF TYP. * Built-in gate protection diode
Note TO-220SMD package is produced only in Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
75 20 83 332 125 1.5 150 -55 to +150 69 450
V V A A W W C C A mJ (TO-262)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 35 V, RG = 25 , VGS = 20 0 V (TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15687EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan
(c)
2001
2SK3510
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 60 V VGS = 10 V ID = 83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = 75 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 42 A VGS = 10 V, ID = 42 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 38 V, ID = 42 A VGS = 10 V RG = 0 2.0 30 3.0 60 6.5 8500 1300 650 35 28 105 16 150 30 52 1.0 80 240 8.5 MIN. TYP. MAX. 10 10 4.0 UNIT
A A
V S m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D15687EJ1V0DS
2SK3510
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
150
dT - Percentage of Rated Power - %
100
PT - Total Power Dissipation - W
0 25 50 75 100 125 150 175
125
80
100
60
75
40
50
20
25
0
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000
d ite ) Lim 10 V = S
ID(pulse)
PW =1 0 s
TC - Case Temperature - C
ID - Drain Current - A
100
R t VG (a
( DS
o
n)
ID(DC)
DC
10 0 s
1m s
10
10 Po m s Lim we ite r Di d ss ipa tio n
1 TC = 25C Single Pulse 0.1 0.1 1 10 VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
10
Channel to Ambient Rth(ch-A) = 83.3C/W
1 Channel to Case Rth(ch-C) = 1.0C/W 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D15687EJ1V0DS
3
2SK3510
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
400 P ulsed 350
100 0
FORWARD TRANSFER CHARACTERISTICS
V D S = 10 V P ulsed
100
ID - Drain Current - A
250 200 150 100 50 0 0 1 2 3 4 V G S = 10 V
ID - Drain Current - A
300
10
1
T A = 150C 75C 25C -55C
0.1 1 2 3 4 5 6 7
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
4.0
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
VDS = 10 V
VGS(off) - Gate Cut-off Voltage - V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100
VDS = 10 V ID = 1 mA
P u ls e d
10
1
T A = 1 50 C 7 5 C 2 5 C -5 5 C
0 .1
0 .0 1
0 .0 1 0 .1 1 10 100
150
200
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
20 18 16 14 12 10 8 6 4 2 0 1 10 100 1000
V G S = 10 V P ulse d
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
10 P ulse d 8 ID = 42 A 6
4
2
0 0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15687EJ1V0DS
2SK3510
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
1 4 .0 P u ls e d
100000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
V GS = 0 V f = 1 MHz C is s C oss
1 0 .0 8 .0 6 .0 4 .0 2 .0 0 .0 -1 0 0 -5 0 0 50 100 150 200 VGS = 10 V ID = 4 2 A
Ciss, Coss, Crss - Capacitance - pF
1 2 .0
10000
1000
C rs s
100 0 .1 1 10 100
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
1000
80
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16 V DD = 60 V V DD = 38 V V DD = 15 V ID = 8 3 A 14 12 10 8 6 V GS 20 10 0 0 50 100 150 200 V DS 4 2 0
VDS - Drain to Source Voltage - V
70 60 50 40 30
td(off) 100 td(on) tr tf 10
1 0.1
VDD = 38 V VGS = 10 V RG = 0 1 10 100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000 P u ls e d 100 VGS = 0 V VGS = 10 V 1
REVERSE RECOVERY TIME vs. DRAIN CURRENT
100
10
0 .1
trr - Reverse Recovery Time - ns
ISD - Diode Forward Current - A
VGS = 0 V d i/ d t = 1 0 0 A / s 10 0 .1 1 10 100
0 .0 1 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 1 .6 1 .8 2
VSD - Source to Drain Voltage - V
IF - Drain Current - A
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
Data Sheet D15687EJ1V0DS
5
2SK3510
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
1000
SINGLE AVALANCHE ENERGY DERATING FACTOR
160 140 120 100 80 60 40 20 0 25
VDD = 35 V RG = 25 VGS = 20 0 V IAS 69 A
IAS - Single Avalanche Current - A
100
IA S = 6 9 A
10
E
AS
= 450 m J
1 0 .0 0 1
Energy Derating Factor - %
VDD = 35 V R G = 25 VGS = 20 0 V
0 .0 1
0 .1
1
10
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15687EJ1V0DS
2SK3510
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
3.00.3
2) TO-262 (MP-25 Fin Cut)
1.00.5
10.6 MAX. 10.0 TYP.
4.8 MAX.
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
12.7 MIN.
1.30.2
12.7 MIN.
8.50.2
0.750.3 2.54 TYP. 0.50.2 2.80.2
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
3) TO-263 (MP-25ZJ)
10 TYP. 4
1.00.5 8.50.2
4) TO-220SMD (MP-25Z)
4.8 MAX. 1.30.2 4
1.00.5
Note
10 TYP.
4.8 MAX. 1.30.2
1 1.40.2 0.70.2 2.54 TYP.
2
3
1
TY P.
T . YP
2
3
1.10.4
5.70.4
3.00.5
8.50.2
P. TY P. 5R TY 0. R 0.8
1.40.2 0.50.2 0.750.3 2.54 TYP.
R 0.5
2.54 TYP.
0.8
R
2.54 TYP.
0.50.2
2.80.2
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark
Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate
Gate Protection Diode
Source
Data Sheet D15687EJ1V0DS
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source 4.Fin (Drain)
7
2SK3510
* The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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