 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. Features * 13A, 500V * rDS(ON) = 0.400 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRF450 PACKAGE TO-204AA BRAND IRF450 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRF450 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF450 500 500 13 8.1 52 20 125 1.2 860 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IGSS IDSS ID(ON) rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured from the Source Lead, 6mm (0.25in) from the Flange to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS, ID = 250A VGS = 20V VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) VGS = 10V, ID = 7.2A (Figures 8, 9) VDS 50V, ID = 7.2A (Figure 12) VDD = 250V, ID 13A, RG = 6.2, RL = 19 (Figures 17, 18) MOSFET SwitchingTimes are Essentially Independent of Operating Temperature VGS = 10V, ID = 13A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) MIN 500 2.0 13 6.0 - TYP 0.3 11 20 40 72 35 85 12 42 1800 400 100 5.0 MAX 4.0 100 25 250 0.400 27 66 100 60 130 - UNITS V V nA A A A S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate to Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance Internal Source Inductance LS - 12.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 0.83 30 oC/W oC/W 2 IRF450 Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 13 52 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ TJ TJ = 25oC, ISD = 13A, VGS = 0V (Figure 13) = 25oC, ISD = 13A, dISD/dt = 100A/s = 25oC, ISD = 13A, dISD/dt = 100A/s 280 3.2 600 7.5 1.4 1200 14 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 9.2mH, RG = 25, peak IAS = 13A. See Figures 14, 15. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 15 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 0 50 100 150 12 9 6 3 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 10-4 10-2 10-3 0.1 t1, RECTANGULAR PULSE DURATION (s) PDM 0.001 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 1 10 0.0001 10-5 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 3 IRF450 Typical Performance Curves 103 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 10s 100s 1ms 10ms 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 102 DC 0 103 0 50 100 Unless Otherwise Specified (Continued) 20 VGS = 6.0V ID, DRAIN CURRENT (A) 16 VGS = 5.5V 12 80s PULSE TEST ID, DRAIN CURRENT (A) 102 10 8 VGS = 5.0V 4 VGS = 4.5V VGS = 4.0V 150 200 250 VDS , DRAIN TO SOURCE VOLTAGE (V) 0.1 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 20 80s PULSE TEST VGS = 10V VGS = 6.0V ID, DRAIN CURRENT (A) 102 VDS 50V 5 80s PULSE TEST ID, DRAIN CURRENT (A) 16 VGS = 5.5V 12 2 10 5 2 1 5 2 0.1 5 2 10-2 TJ = 150oC TJ = 25oC 8 VGS = 5.0V 4 VGS = 4.5V 0 0 VGS = 4.0V 3 6 9 12 VDS , DRAIN TO SOURCE VOLTAGE (V) 15 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 2.0 DRAIN TO SOURCE ON RESISTANCE 80s PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE 1.6 VGS = 10V 1.2 3.0 ID = 13A VGS = 10V 2.4 1.8 0.8 VGS = 20V 0.4 1.2 0.6 0 0 12 24 36 ID , DRAIN CURRENT (A) 48 60 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4 IRF450 Typical Performance Curves 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A Unless Otherwise Specified (Continued) 10000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1.15 C, CAPACITANCE (pF) 8000 1.05 6000 CISS COSS 2000 CRSS 0.95 4000 0.85 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0 2 TJ , JUNCTION TEMPERATURE (oC) 5 10 2 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 102 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 20 gfs, TRANSCONDUCTANCE (S) ISD, SOURCE TO DRAIN CURRENT (A) VDS 50V 80s PULSE TEST TJ = 25oC 102 5 2 10 5 2 1 5 2 0.1 0 0.5 1.0 1.5 2.0 VSD , SOURCE TO DRAIN VOLTAGE (V) 2.5 TJ = 150oC 16 12 TJ = 150oC TJ = 25oC 8 4 0 0 4 8 12 ID , DRAIN CURRENT (A) 16 20 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 13A FOR TEST CIRCUIT, SEE FIGURE 18 16 VDS = 100V 12 VDS = 250V VDS = 400V 8 4 0 0 25 50 75 100 Qg(TOT) , TOTAL GATE CHARGE (nC) 125 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5 IRF450 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + - 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 6 IRF450 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 7 |
Price & Availability of IRF450
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |