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SemiWell Semiconductor
SCF10C60
Symbol
3. Gate

Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 10 A ) Low On-State Voltage (1.4V(Typ.)@ ITM) Isolation Voltage ( VISO = 1500V AC )
1 23
2. Anode
1. Cathode
TO-220F
General Description
Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM VISO TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 Half Sine Wave : TC = 86 C 180 Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 6.4 10 110 60 50 5 0.5 2 5.0 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature
Units
V A A A A2 s A/ W W A V V C C
Aug, 2003. Rev. 1
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCF10C60
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 C TC = 125 C ITM = 20 A VAK = 6 V(DC), RL=10 IGT Gate Trigger Current (2) TC = 25 C 15 mA tp=380 10 200 1.6 ( TC = 25 C unless otherwise noted )
Conditions
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
VTM
V
VD = 6 V(DC), RL=10 VGT Gate Trigger Voltage (2) TC = 25 C 1.5 V
VGD dv/dt
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage
VAK = 12 V, RL=100
TC = 125 C
0.2 200

V
Linear slope up to VD = VDRM 67% , Gate open TJ = 125C IT = 100mA, Gate Open
V/
IH
Holding Current
TC = 25 C
20
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
Junction to case Junction to Ambient

3.8 60
C/W C/W
Notes : 1. Pulse Width 1.0 ms , Duty cycle 1% 2. RGK Current not Included in measurement.
2/5
SCF10C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
VGM(5V) PGM(5W)
o
10
1
Max. Allowable Case Temperature [ C]
120
100
Gate Voltage [V]
= 180
80
o
25 C
o
IGM(2A)
10
0
PG(AV)(0.5W)
60

2
40
360
20
: Conduction Angl e
VGD(0.2V)
10
-1
0 0 1 2 3 4 5 6 7
10
-1
10
0
10
1
10
2
10
3
10
4
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
2
Fig 4. Thermal Response
10
2
Transient Thermal Impedance [ C/W]
10
1
On-State Current [A]
o
125 C 10
1
o
10
0
10
-1
25 C
o
10
-2
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
10
Fig 6. Typical Gate Trigger Current vs. Junction Temperature
VGT(25oC)
VGT(toC)
IGT(25 C)
IGT(t C)
o
o
1
1
0.1 -50
0
50
100
o
150
0.1 -50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
3/5
SCF10C60
Fig 7. Typical Holding Current
10
10 = 180
o
Fig 8. Power Dissipation
Max. Average Power Dissipation [W]
= 120 8 = 30 6
o
o
= 90 = 60
o
o
IH(25 C)
IH(t C)
o
o
1
4
2
0.1 -50
0
50
100
o
150
0 0 1 2 3 4 5 6 7
Junction Temperature[ C]
Average On-State Current [A]
4/5
SCF10C60
TO-220F Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
1 2
F B
A E
H
I
1 2
C L 1 D 2 3 J K M
G
1. Cathode 2. Anode 3. Gate
N O
5/5

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