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| 2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3678 900 800 7 3(Pulse6) 1.5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=-0.3A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 2SC3678 Unit A A 19.90.3 V V V MHz pF 4.0 a b o3.20.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.5 ton (s) 1max tstg (s) 5max tf (s) 1max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 3 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) (IC/IB=5) Collector-Emitter Saturation Voltage V C E (sa t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) I C - V BE Temperature Characteristics (Typical) 3 (V CE= 4V) 500mA 400mA 300mA 1 -55C (Case Tem 25C (Cas V B E( sat) p) Collector Current I C (A) 2 200 mA Collector Current I C (A) e Temp) Temp) 2 mp) mp) 25C (C ase Te 2 5 Cas eT C emp) -55 C ( V C E( sat) 0 0.02 0.05 0.1 0.5 1 12 5C 0 0 1 2 3 4 3 0 0 0.2 0.4 0.6 0.8 -55C (C IB=50mA 125C 1 1 (Cas 125C ase Tem 100mA (Case e Te p) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 125C DC Curr ent Gain h F E 25C 8 j-a(C/W) hFE - IC Characteristics (Typical) ton*t st g*t f ( s) t on *t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 3 5 tstg V C C 250V I C: IB1:-I B2 =2:0.3:1Const. 1 0.5 ton 0.2 0.1 0.5 1 3 Transient Thermal Resistance -55C Switching T im e 1 tf 10 0.5 5 0.01 0.05 0.1 0.5 1 3 0.3 1 5 10 50 Time t(ms) 100 500 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 10 10 Reverse Bias Safe Operating Area 80 P c - T a Derating 10 0 Maxim um Power Dissip ation P C( W) 5 s 5 60 W ith Co lle ctor Cu rren t I C( A) Collecto r Curr ent I C( A) In fin ite he 1 1 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 40 at si nk 0.5 Without Heatsink Natural Cooling 0.5 20 0.1 50 100 500 1000 0.1 50 100 500 1000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 67 This datasheet has been download from: www..com Datasheets for electronics components. |
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