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| Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SB1322A I Features * Low collector to emitter saturation voltage VCE(sat) * Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A * Allowing supply with the radial taping 6.90.1 1.05 2.50.1 0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45-0.05 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1.5 1 1 150 -55 to +150 Unit V V V A A W C C 1.20.1 0.65 max. 0.45+ 0.1 - 0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 2.50.1 I Absolute Maximum Ratings Ta = 25C 1 2 3 0.45-0.05 +0.1 2.50.5 2.50.5 (HW Type) I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency *1 Symbol ICBO VCBO VCEO VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20 V, IE = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min Typ Max 0.1 14.50.5 0.5 4.50.1 Unit A V V V 60 50 5 85 50 100 0.2 0.85 200 11 20 0.4 1.2 340 V V MHz pF Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 No-rank 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SD1994A PC Ta 1.2 Transistors IC VCE 1.50 Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.50 3 mA 2 mA 0.25 1 mA 1.2 VCE = 10 V Ta = 25C 1.0 IC IB Collector power dissipation PC (W) 1.0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.25 Collector current IC (A) 0.8 1.00 Collector current IC (A) 0.8 0.6 0.75 0.6 0.4 0.4 0.2 0.2 0 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 VBE(sat) IC 100 hFE IC 500 VCE = 10 V Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 30 Forward current transfer ratio hFE 400 10 3 1 25C Ta = 100C -25C 25C Ta = -25C 100C 300 Ta = 100C 200 25C -25C 100 0.3 0.1 0.03 0.01 0.01 0.03 0.003 0.001 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT IE 200 180 VCB = 10 V Ta = 25C 60 Cob VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) IE = 0 f = 1 MHz Ta = 25C 120 VCER RBE IC = 10 mA Ta = 25C 100 Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 -1 -2 -3 -5 -10 -20-30 -50 -100 50 40 80 30 60 20 40 10 20 0 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistors ICEO Ta 104 VCE = 10 V 2SD1994A Area of safe operation (ASO) 10 3 ICP t = 10 ms t=1s Single pulse Ta = 25C Collector current IC (A) 103 1 0.3 0.1 0.03 0.01 IC ICEO (Ta) ICEO (Ta = 25C) 102 10 0.003 1 0 20 40 60 80 100 120 140 160 0.001 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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