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| IL400 Vishay Semiconductors Optocoupler, PhotoSCR Output, 400 VRM, 1 A surge current Features * * * * * * * * * Turn on current (IFT), 5.0 mA typical Gate trigger current (IGT), 20 A Surge anode current, 1.0 AMP Blocking voltage, 400 V Gate trigger voltage (VGT), 0.6 Volt Isolation Test Voltage, 5300 VRMS Solid State Reliability Standard DIP Package Lead-free component A1 C2 NC 3 6G 5A 4C i179006 e3 Pb Pb-free * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Order Information Part IL400 IL400-X007 IL400-X009 Remarks Blocking voltage, 400 V, DIP-6 Blocking voltage, 400 V, SMD-6 (option 7) Blocking voltage, 400 V, SMD-6 (option 9) Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 For additional information on the available options refer to Option Information. Description The IL400 is an optically coupled SCR with a gallium arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. The IL400 can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivy are required. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Peak forward current (100 s, 1 % duty cycle) Forward continuous current Power dissipation Derate linearly from 25 C Document Number 83626 Rev. 1.5, 26-Oct-04 Test condition Symbol VRM IFM IF Pdiss Value 6.0 1.0 60 100 1.3 Unit V A mA mW mW/C www.vishay.com 1 IL400 Vishay Semiconductors Output Parameter Reverse gate voltage Anode voltage (DC or AC Peak) Anode current Surge anode current (10 ms duration) Surge gate current (5.0 ms duration) Power dissipation Derate linearly from 25 C Test condition Symbol VRG VA IA IAS IGS Pdiss Value 6.0 400 100 1.0 200 200 2.11 Unit V V mA A mA mW mW/C Coupler Parameter Isolation voltage Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Total package dissipation Derate linearly from 25 Operating temperature Storage temperature Tamb Tstg Test condition Symbol VISO RIO RIO Value 5300 > 1012 > 10 12 Unit VRMS mW mW/C C C 250 2.63 - 55 to +100 - 55 to +150 Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse voltage Reverse current Test condition IF = 20 mA I R = 10 A VR = 5.0 V Symbol VF VR IR 5.0 10 Min Typ. 1.2 Max 1.5 Unit V V A Output Parameter Forward blocking voltage Reverse blocking voltage On-state voltage Holding current Gate trigger voltage Forward leakage current Reverse leakage current Gate trigger current Test condition RGK = 10 K , TA = 100 C , Id = 150 A RGK = 10 K , TA = 100 C , Id = 150 A IT = 100 mA RGK = 27 K , VFX = 50 V VFX = 100 V, RGK = 27 K, RL = 10 K RGK = 27 K , IF = 0 RGK = 27 K , IF = 0 VFX = 100 V, RGK = 27 K, RL = 10 K Symbol VDRM VDRRM Vt IH VGT ID IR IGT 0.6 0.2 0.2 20 Min 400 400 1.2 500 1.0 2.0 2.0 50 Typ. Max Unit V V V A V A A A www.vishay.com 2 Document Number 83626 Rev. 1.5, 26-Oct-04 IL400 Vishay Semiconductors Coupler Parameter Turn-on current Capacitance (input-output) Test condition VFX = 100 V f = 1.0 MHz Symbol IFT CIO Min 0.5 Typ. 5.0 Max 10.0 2 Unit mA pF Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 Document Number 83626 Rev. 1.5, 26-Oct-04 www.vishay.com 3 IL400 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 83626 Rev. 1.5, 26-Oct-04 |
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