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AO4600 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering option. AO4600 and AO4600L are electrically identical.
Features
n-channel p-channel -30V VDS (V) = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27m < 49m (VGS =- 10V) < 32m < 64m (VGS =- 4.5V) < 50m < 120m (VGS = -2.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
G1 S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 12 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -30 12 -5 -4.2 -30 2 1.44 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
6.9 5.8 40 2 1.44 -55 to 150
W C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead
Symbol RJA RJL
Typ 48 74 35
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4600
n-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 12 0.7 25 22.6 33 27 42 16 0.71 1 3 858 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 110 80 1.24 9.6 VGS=4.5V, VDS=15V, ID=6.9A 1.65 3 5.7 VGS=10V, V DS=15V, R L=2.2, RGEN=6 IF=5A, dI/dt=100A/s IF=5A, dI/dt=100A/s 13 37 4.2 15.5 7.9 20 4 12 1050 27 40 32 50 1 Min 30 1 5 100 1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 ID (A) 15 10 5 0 0
10V
20 3V 4.5V 2.5V ID(A) 16 12 8 4 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 VDS (Volts) Fig 1: On-Region Characteristics VGS (Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V
VGS=2V
60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V VGS=2.5V Normalized On-Resistance
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature
ID=5A
VGS=4.5V VGS=10V
VGS=2.5V
VGS=10V
70 60 RDS(ON) (m) 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C
1.0E+01
ID=5A
IS Amps
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.00
125C
25C
0.25
0.50
0.75
1.00
1.25
1.50
VSD (Volts) Figure 6: Body diode characteristics
Alpha & Omega Semiconductor, Ltd.
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics 1500 VDS=15V ID=6.9A Capacitance (pF) 1250 1000 750 500 250 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss f=1MHz VGS=0V
100.0 RDS(ON) limited 10.0 ID (Amps) 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 TJ(Max)=150C TA=25C 100s Power W
40 TJ(Max)=150C TA=25C
30
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
T 100 1000
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4600
p-channel MOSFET Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A TJ=125C 54 7 80 11 -0.75 -0.7 -25 42.5 49 74 64 120 -1 -3 952 103 77 5.9 9.5 2 3.1 12 4 37 12 21 13 1200 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns 26 ns nC
gFS VSD IS
VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
30 12
VGS=-4.5V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3, RGEN=6
IF=-5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. value in any rating, application limited by junction temperature. B: Repetitivea given pulse width depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. B: Repetitive rating, pulse width limited by junction temperature. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. curve provides a single pulse rating. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The Rev 4 : Sept 2005 SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4600 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
25 -10V 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 120 Normalized On-Resistance 100 RDS(ON) (m) 80 60 40 VGS=-10V 20 0 2 4 6 8 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-4.5V 1.6 -2.5V -4.5V -3V -ID (A) 6 -ID(A) 4 125C 10 VDS=-5V 8
VGS=-2V
2
25C
0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics
ID=-5A VGS=-4.5V VGS=-10V
VGS=-2.5V
1.4
1.2
VGS=-2.5V ID=-2A
1
190 170 150 RDS(ON) (m) 130 110 90 70 50 30 10 0 2 4 6 8 10 25C 125C ID=-2A -IS (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C
125C
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AO4600 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics VDS=-15V ID=-5A Capacitance (pF) 1400 1200 1000 800 600 400 Coss Crss Ciss
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
40 10s 100s 1ms 10ms Power (W) 30 TJ(Max)=150C TA=25C
-ID (Amps)
10.0
20
1.0
1s 10s DC
10
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha and Omega Semiconductor, Ltd.

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