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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS(on) = 1000 V = 4A = 3.0 W trr 250 ns Maximum Ratings 1000 1000 20 30 4 16 4 20 700 5 150 -55 to +150 150 -55 to +150 300 1.13/10 6 4 V V V V A A A mJ mJ V/ns W C C C C Nm/lb.in. g g TO-247 AD (IXFH) G D S (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * International standard packages * Low RDS (on) * Unclamped Inductive Switching (UIS) rated * Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 100 TJ = 25C TJ = 125C 50 1 3.0 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1.5 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Advantages * Easy to mount * Space savings * High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 98648A (03/24/00) (c) 2000 IXYS All rights reserved 1-4 IXFH 4N100Q IXFT 4N100Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.5 2.5 1050 VGS = 0 V, VDS = 25 V, f = 1 MHz 120 30 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 W (External), 15 32 18 39 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 9 22 0.8 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 16 1.5 A A V J K L M N 1.5 2.49 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.52 1.8 250 ns mC A TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 4N100Q IXFT 4N100Q Figure 1. Output Characteristics at 25OC 4 TJ = 25C VGS = 10V 9V 8V Figure 2. Extended Output Characteristics at 125OC 6 5 TJ = 25C VGS = 10V 9V 8V 3 7V ID - Amperes ID - Amperes 7V 4 3 2 1 6V 2 6V 1 5V 5V 0 0 2 4 6 8 10 0 0 4 8 12 16 20 VDS - Volts VCE - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 4 TJ = 125C Figure 4. Admittance Curves 4 3 VGS = 10V 9V 8V 7V 3 ID - Amperes ID - Amperes O TJ = 125 C 2 6V 2 O TJ = 25 C 1 5V 1 0 0 5 10 15 20 0 3 4 5 6 7 8 VDS - Volts VGS - Volts Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.2 RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 1 2 3 4 5 6 TJ = 25C VGS = 10V Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.4 2.2 RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 25 50 75 100 125 150 VGS = 10V ID = 2A TJ = 125C ID - Amperes (c) 2000 IXYS All rights reserved TJ - Degrees C 3-4 IXFH 4N100Q IXFT 4N100Q Figure 7. Gate Charge 15 12 VDS = 600 V ID = 3 A IG = 10 mA Figure 8. Capacitance Curves 2000 Ciss 1000 Capacitance - pF f = 1MHz Coss Crss VGS - Volts 9 6 3 0 0 10 20 30 40 50 60 100 10 0 5 10 15 20 25 30 35 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 10 Figure10. Drain Current vs. Case Temperature 5 8 60 4 ID - Amperes 6 TJ = 125OC ID - Amperes 1.2 3 4 TJ = 25 C O 2 2 1 0 0.2 0.4 0.6 0.8 1.0 0 -50 -25 0 25 50 75 100 125 150 VSD - Volts TC - Degrees Centigrade Figure 11. Transient Thermal Resistance 1.00 R(th)JC - K/W 0.10 0.01 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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