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ESMT Synchronous Graphic RAM $(((,#")::-)-(& % !"$%; ( :(-)(.. ()0 #$< %0$9#% # %0 293 !%0%01)%& %) % 30030 % )%0 4 .3 0% ! ! ! ! ! ! ! ! ! ! !"# $!# % &"#'()* &+%',)()-)./0%* &+'#1/23* " 3%% %0 +! #%&4 5$6&0% "/00 (0 '(7* ,6658 58 ! #$!# & % & % ! 4 +'9 $* ! +4'.* Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT "#! ! ! DQM3 VDDQ DQ15 DQ25 DQ28 DQ27 DQ26 DQ24 DQ14 DQM1 DQ11 DQ13 DQ12 DQ10 VDDQ VSSQ VDDQ VDDQ VSSQ VSSQ DQ 9 DQ 8 CKE CLK DSF 53 VDD N. C VSS A8/AP 51 N. C 52 80 79 78 77 76 75 74 71 73 72 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 10 11 12 13 14 15 16 17 18 19 20 21 23 24 27 28 22 25 26 29 30 1 2 3 4 5 6 7 8 9 ! " " " " # $ % 55 54 50 49 48 47 46 45 44 43 42 41 40 39 38 VDDQ VSSQ DQ 6 DQ 7 WE CS BA(A11) DQ 3 VDDQ VSSQ DQ 4 DQ 5 DQ16 DQ17 DQ18 DQ21 VSSQ DQ19 VDDQ DQM0 DQM2 DQ20 DQ23 CAS DQ22 VDDQ RAS VDD Elite Semiconductor Memory Technology Inc. P. VSS Publication Date : Oct. 2001 Revision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lite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT )%%#(& 9%)$"&$#(& 9%)2#(& :)%)$"&$#(& :)%)2#(& 9%)(!(& ),, :)%)(!(& ),, :)%)('"&'"" ! " >.> > > > > 9 9 ! % '%0 C6* $ "& % >1 > > > > > D D B 9C 9 C B B , '*C&, :"' :* ( "6 D6 ) C6 - )6 'C )C(: )0C,$E$* 9%) (%( "( <3= 9%) (%( "( <./. . 4 . . 8/ .* 7*= *(("%))%) (%( "( <*3*= ! " % % % % * )%"&(%( "( +2>7> * )%"&(%( "( +2>7> ! % ! " # 1 1 ) ) , " " ( " " Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT # ! " ! % )C6F6 %&!%'!C( 66 . & 6),&$C 9 ! '( # '(( ') '* '+ :%,("&),, <:6(! "#= %&!. %&! 9 C / > .C E E ?, $(,&('+),, "%2,'2' 9? 9? / > . > .C 9B / >. >.C 9%)"&((, $(&'"'),"& 9B / >. > .C "%)"&((,(+ 9? / > .C ?, $(,&('+),, "%2,'2' "#('+),, "%2,'2' "#('+),, "%2,'2' <:6(! "#= 9? / > . > .C 9B / >. >.C 9%)"&((, $(&'"'),"& 9B / >. > .C "%)"&((,(+ 9 9 9 9 9 C.?(&6), 6(! "#('.C %&! :%,("&),, <6),'= 40,$),, . %&! / > 040,$),, :%,("&),, <:6(!6 !8,"= %&! 9 C.%&! E G@H , $ ( " %&!( !0 ( - " %&!( Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT 9%)# 9%)""&(),,0, # 9%),"('0("<= :)%)""&(),,0, # :)%)(' '"" # 'C 6 )C6F6 * >> C>> > C > "& 3.3V 1200 Output 870 VREF = 1.4V VOH (DC) =2.4V , IOH = -2 mA VOL (DC) =0.4V , IOL = 2 mA Output Z0 =50 50 30pF 30pF < "&=*:)%)('", )" < "&=:)%)('", )" # ( ( #("' ( )%)'( ( :)%)'(( ( $'" ( $"&$%)2"'$ " 2%)2"'$ 9%))%" 9%)$'" )%)"2; )%) 9"; ( C C C C C C C '"% * ! " '( '(( ') '* '+ % % % % % $ $ . ( C F%(,(,(,(),'0,$(0$(0 FA$(%%" ("(,&)(,((> >> '"" Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT G@H , % "# ( 20%%,)'(&6 :* " % 0%'/0*C, 20/0%,) )I'D0*(&,J 42( "#,2( "#'( 4 '( 42%, $(,&" 42( "#" 42 " ('(("2 ('','( ('((",2%, $(,& 6 !2,"'(("?4/ (''( 6 !2,"'((" "#<4/ = ('%,"'<)%, $(,&= ('((+),% '', '','( 6 !2," " B)+,0#("':)%)'(( '"% * ! " '( '(( # ') '* '+ ) %&! %&! )%&! %&! %'! %&! %&! %&! )%&! %&! %&! %&! %&! ( C ( C @H, 0 3 %1 %00%% ( $ 1 "3 % - "# "# : 20%)% Elite Semiconductor Memory Technology Inc. P. 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Publication Date : Oct. 2001 Revision : 1.5 ESMT () )*! 0 1 % 3 % =)B % % % 5$ % 0 % 3 0 '* 0) % '* 0 3 " 0 %) 3 % ) " 0) #0 0 $ % # % 0 % % #A!"$ %%0%&! =)B0 % % "# % % % "." 20 "." ) 0 3 9 % %3) 3 + % % % "% # ) !"# 4 %"." 0 30 %&!1)0 % " 0 ) 0 0%%) ( % 0 #A!"$ 0 3( " 0 0 0 % 0 % 3 0 0 " 0 % # ) !"# "# % 7 4 0 % 3 '7% 3 * 1 00 %&! 0 1 3% % % % 0 0 @9 < 0 + 00 0 0 0 #A!"$ % 0 0 0 ,: K 0(6-.0( ( ( 0 0 0 3#A!"$ 00 0 0 0 0#A!"$ 200 ) #A!"$ 00 7 0 % % % 00 0 % # ) !"# ) "# 7 % 4 9 00 )7 Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT () )*! % ) % % 0 0 0 % %%7 0 @9 < 0 0 0 #A!"$ % 20 0 %) (6-. 0 0%00 ( (( #8 % 0 #A!"$ 20#8 )#A!"$0 :,(7 ( ( + #!"$ #A!"$ 0 #8 " % 0 % #8 % % #!"$ #!"$0 !"# "3)4 4+!%#A!"$0 !"# "3 4 +) + 4 #4+! 3#8 ' ' 0 % #A!"$ 9 % % % =4!2 ! +2B =+97 4!2B 4 ": #8 % % # ) !"# ) "# 4 %% ) % 0 0 5< % 5 20 ": "K % #$!#) 0 1 % % $! ! 3 0 $! !) #$!#) $!#) 3 5< " ) #$!# % 5 0 0% %% % % 4 ' 29 * 0 #A!"$ 0 3 0 % 3 % 0 +3 #8CE% 0 0 % #4+! '# $ !% # * 4 C6) 0 % @ % 4 % 0 &4 + % + 0 % % 0 3 . 0 !"$ 3 % % % 0=B% 5 29 0 0 % . 0 #+< % 4 #8C, 0 . CBB 0 =B % 0 2 3 #4+! 5 Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT () )*! % % 3 5 ) 4 + '0 *) 5$ %' %* 3 3 0 0 35 % 5 0 % ' 5 I6HFJ 3 0 I6HFJ)5I.H,:J3 0 I.H,:J)56I6J0 I6HFJ)5OI,J0 I.H,:J) * +& 0%% % 20 3 #8C,) %0% 20 3 #8C6)%0 % 5$ % 3 % % ) 3.0 + ), , +(-- , (7+4 CLOCK CKE CS HIGH RAS CAS WE DSF 2 CLK BW Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision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lock Suspe nde d Dur ing Write (BL=4) 2) Clock Suspen de d Dur in g Read (BL=4) CLK CMD CKE Internal CLK DQ(CL2) DQ(CL3) D0 D0 D1 D1 D2 D2 Not Written D3 D3 Q0 Q1 Q2 Q1 Q3 Q2 Q3 WR RD Masked by CKE Masked by CKE Q0 Susp end ed Dou t FB5/'"(+(+C ! Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT ( 5$9 1)Write Mask (BL=4) 2)Read Mask (BL=4) CLK CMD WR RD DQ M Masked by DQM Maske d by DQM DQ(CL2) DQ ( C L3) D0 D0 D1 D1 D3 D3 Q0 Hi-Z Q2 Q1 Q3 Q2 Q3 Hi-Z DQM to Data-in Mask=0 CLK DQ M t o D a t a- out M a s k =2 3)DQM with clcok suspende d (Full Page Read) Note2 CLK CMD CKE DQ M DQ (C L2) DQ(CL3) Q0 Hi-Z RD Q2 Q1 Hi-Z Q4 Q3 Hi-Z Q6 Q5 Q7 Q6 Q8 Q7 Hi-Z Hi-Z Hi-Z FB5A$,(,*"<"C3= /( $*"(!*H<6.?"-0,+%%= *(!'(()";(0, !2$" $$)'(!'+/KL Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT "#2'2* *Note 1 1)Read interrupted by Read (BL=4) CLK CMD ADD DQ(CL2) DQ(CL3) CC D *Note 2 RD A RD B QA0 QB0 QA0 QB1 QB2 QB0 QB1 QB3 QB2 QB3 t 2)Write interrupted by(Block) Write (BL=2) 3)Write interrupted by Read (BL=2) CLK CMD WR WR * Note 2 WR BW * Note 2 WR RD * Note 2 tC CD ADD DQ A DA0 tCCD A tC CD A B DB0 DB1 B *Note 4 B DB0 D C 0 Pi xe l CDL *N ot e 3 DQ(CL2) DQ(CL3) DA0 DA0 DB1 DB0 DB1 tCDL * N ot e 3 t tCDL 4)Block Write to Block Write * N ot e 3 CLK CMD ADD BW A Pi xel BWC *Note 6 NOP X BW B Note 4 Note 7 DQ Pi xe l t FB56K9,,)%L.9"%"+%+),,('2,"+-,(+0,$'0+), 6K 9,,)%L.%+),,('2,"+ ( M,('.2,"('+ !2," 5 '( Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT - "#2' ! *H! 2 4/5$ <=C.6C CLK i)CMD DQM RD WR DQ ii)CMD DQM RD D0 D1 WR D2 D3 DQ iii)CMD DQ M RD Hi-Z D0 D1 WR D2 D3 DQ iv)CMD DQM RD Hi-Z D0 D1 WR D2 D3 DQ Q0 Hi-Z *Note1 D0 D1 D2 D3 <=C.6C CLK i)CMD DQ M DQ D0 D2 D3 RD WR D1 WR ii)CMD DQ M DQ iii)CMD DQM RD D0 D1 D2 D3 RD WR DQ iv)C MD DQ M RD D0 D1 WR D2 D3 DQ v) C M D DQM RD Hi-Z D0 D1 WR D2 D3 DQ Q0 Hi- Z *Note 2 D0 D1 D2 D3 FB5 A%,#+) ".$,$)'+((&(%+2'(("(''(() A%,#+) ".*$)'+")'2$" $(!((&(%+2'(("(''(() Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT : 42 %/5$ CLK CMD *Note 2 WR PRE *Note 1 DQ M DQ D0 D1 D2 D3 Masked by DQM FB5 A"$"+""#("'2,".*$)'+")' A$"%, $(,& ('('+),2," ('$)'+0$(+(!.$,2"""%, $(,&",,)% +)($,+(!%, $(,&0')(+(!%,(" K % =B,(8,"<6C= CLK CMD DQ WR D0 D1 D2 D3 PRE CLK CMD BW Pi xel PRE =6 !8," DQ tRDL *Note 1 tBPL *Note 1 =4('<6C= CLK CMD RD Q0 Q1 Q0 PRE *Note 2 DQ( CL2) DQ( CL3) Q2 Q1 Q3 1 Q2 Q3 2 F " % =B,(8,"<6C= CLK CMD DQ WR D0 D1 D2 D3 *Note3 =6 !8," CLK CMD DQ BW Pi xel tB PL Auto Precharge starts tRP tBAL *Note3 Auto Precharge starts Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT =4('<6C= CLK CMD RD Q0 Q1 Q0 Q2 Q1 Q3 Q2 *Note3 DQ ( C L2 ) DQ ( C L3 ) Q3 Auto Precharge starts FB; 58,"'(("?4/ (''(.)56 !8,"'(("?4/ (''( B)+,0#("')%)'(((0,,2%, $(,&5.0,( C.,% "# A$,2( "# ('0$%, $(,&+(! (+")'(0,)0,$"%" A$2,('2," ('0$,( "#('+(! (+")'0,$"%" +),,('2,"2"$()%, $(,&. ",,)%0$(+(!""&( . +#/ %2 =8,"",,)%'+?, $(,&<6C= CLK CMD WR PRE =8,"6),%< )?(&:= CLK CMD WR STOP DQ M DQ D0 D1 D2 D3 *Note 1 DQ D0 D1 D2 tRDL tBDL =4('",,)%'+?, $(,&<6C= CLK CMD RD PRE Q0 Q1 Q0 1 *Note3 =4('6),%< )?(&:= CLK CMD DQ (C L2 ) RD STOP Q0 Q1 Q0 1 *Note 3 DQ (C L2 ) DQ ( C L3) Q1 2 DQ(CL3) Q1 2 O $!#/#$!# ='4&", CLK *Note 4 =% "('4&", CLK CMD PRE MR S ACT CMD SMR S AC T SMR SSMR S ACT 1CLK 1CLK 1CLK 1CLK tRP 1CLK Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT FB5 5M('(("42?, $(,& 5M('(("6),%*( B)+,0#("')%)'(((0,42?, $(,&,+),%5.0,( C.,% "# ?4/56$+(!%, $(,&."0 (, 4 (+")'((+(!%, $(,&( ,6 # / = !)%' =?2,*2 tS S *Note 1 tSS *Note 2 RD CMD NOP ACT ,, "!0/#0!0 =)40,$ CLK *Note 4 *Note 5 1*+, CMD PRE AR CMD CKE tRP tRC =040,$ FB CLK *Note 4 CMD PRE SR CMD CKE tRP tRC FB; "#%2,'25,,+(!( "#( ?, $(,&%2,'25+$+(!%, $(,&( A$(),0,$"$((64,0,$0 #"(*4 B%, $(,& ('(,,J)",'(0,)40,$ (' *),"&0,(),0,$ ('.($, (' (+( %' 60,- )"&()0,0,$ ('.+$+(!)+"'( <=4.6(! "#.)040,$.?2,*2'/, *),"&0,0,$'.,0,$",#((',0,$%,("(,%,0,'",( 0,0,0,$,.0,0,$'"!%2$"/"2 Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT *),"&0,0,$'.("%)-% /2"+'H (,'.(')%)2"+"";( *),"&0,0,0,$-" ('.($, (' (+( %' 60,0,0,0,$'.+),(),0,$< =", '' ,( "+ 6(" ' J)"()"& 9,(#)"& 4CLL$6I4A/I/B/A6/<6C.= 6C...('0)%(&2,(%(,)' 4CLL$6I4A/I/B/A6/<6C.= 6C.6C.9,(#)"&CJ)"()"& ?)' :*/ 4CLL<",(#)"&'= (,"&'',6+"$)'+KL,KLN6C "06CLL59 ,)"& ?)' 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Publication Date : Oct. 2001 Revision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lite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT "= 9IA4A9:B 9: 4' *C 8$" 8$" 9: C Q2*C Q2*C Q2*C Q2*EC Q2*C Q2*C 6) 6) 6) Q2 6) 6) 6) Q2 *C ,C@, Q2*C Q2*C Q2*C Q2*EC Q2*C Q2*C Q2*C Q2*C 6) 6) 6) 6) 6) 6) 6) 6) *C ,CQ2 @,*C @,*EC @,*C @,*C @,*C @,*C @,*C @,* C 4' @, 4' @, 4' @, 4' @, *C ,C4' 8$"*C 8$"*C 8$"*C 8$"*C 8$"*C 8$"* C 8$"*C 8$"*C 8$" 8$" 8$" 8$" 8$" 8$" 8$" 8$" B ?9G/ 9: ?9G/79: 6QA/ FB5*+(!"& ,(2,".:B/ )" '(& )' ,''+<= + !2,"."('0"&,'('',. * ,( $%"- Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT #0! ! ! 1! ! 4 0! G G G G G G G G G G G G G G G G G G G G G G G G G G G G G 2 001 9*/ 42 "# 4(' 8," G G G G G G 6 6 4 6 4 G ? 6 G G G 6 G :?' :?' G G G G G G 6 .? G G 6 .? 6 .? 6 4 6 4 G G G G G G :?' G G G G G G G G 6 .? G G 6 .? 6 .? 6 4 6 ? G G G G G G G G G G G G 6 .? G G 6 .? 6 .? B:? B:? 9/@ 9/@ 42 "#M( $42'',MB9:(! 42 "#M( $42'',M9:(! )40,$,040,$ B:? )40,$,040,$ 9/@ '4&", % "('4&", B:? 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G 8," G G 4 #,"& G G G G G G G G G 42 G "#("& G G G G G G G G G G G G 40,$"& G G G G G G 664/>9A9:B5 4C42'',<3= B:?CB:%,("(' 9/@ A,6),5?, $(,&""&0,8," 9/@ 9/@ B:?<")6),/'"?, $(,&= B:?<")6),/'"?, $(,&= 9/@ 9/@ 9/@ 9/@ 9/@ B:?<")6),/'"?, $(,&= B:?<")6),/'"?, $(,&= 9/@ 9/@ 9/@ 9/@ 9/@ B:?"9'(0, B:?"9'(0, 9/@ 9/@ 9/@ B:?"9'(0, 9/@ B:?"42 "#(0, B:?"42 "#(0, 9/@ 9/@ 9/@ # !" ' ! ( " 9/@ B:?"42 "#(0, B:?"42 "#(0, 9/@ 9/@ 9/@ 9/@ 9/@ B:?"9'(0, B:?"9'(0, 9/@ 9/@ 9/@ 6C6(!'',<6= C)'',<3= ?C?, $(,&<= ?C)?, $(,&<= Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT #01() )*! FB5 ,"()$/2(( "#<"&$='),"&$%, '"& ! ('$ ),, ! 9&(+(!"% "0"'(M ) "(+&("$+(!"'" ('+6.'%'"&$(0$( +(! )("0+) ".+)),(,)'.(',2,", #,,J)", B:?+(!%, $(,&"&,""'((%, $(,&+(!"'" 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Publication Date : Oct. 2001 Revision : 1.5 ESMT (3)4)5(2 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CKE Hi gh l evel i s n ec es s ar y CS tRP RAS tRC CAS ADDR KE Y Ra BA KE Y BS A8 /A P KE Y Ra WE DSF DQM Hi gh l evel i s n ec es s ar y High-z DQ Pr ech arge (All Ban ks) Auto Ref res h Auto Ref res h Mode R egis ter Set Row Active (W r i te P er B i t E nable or D is abl e) :Don' t Care Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ),- *6 6 */- + ,!7 )/891),80 16 17 18 19 tCL tCC CKE HIGH tRAS tRC *Not e1 tSH tSS tRP CS tRCD tSH RAS tSS tSH CAS tCCD tSS tSH ADDR Ra Ca tSS Cb Cc Rb tSS *Note 2 *Note 2, 3 tSH *Note 2, 3 *Note 2, 3 *Not e4 *Note 2 BA BS BS BS BS BS BS *Note3 *Note3 *Note 3 *Not e4 A8/AP Ra Rb tSH WE tSS *Note5 *Note 6 *Note 5 DSF tSS DQM tSH tSS tSH tRAC tSAC DQ Qa Db tSH Qc tSLZ tOH tSHZ tSS Row Active Rea d ( W r i te per B i t Enable or Disable) W rite or Block W rite Read Precharge Row Act ive (W r ite Per Bit E nable or D is abl e ) :Don't Care Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT G@H, " < # %7%%% % ( +3/ +" 6 "#74('8," 6(! 6(!6 %0 "." ? 6 :%,(" *"(+()%, $(,&.(#+(!( "#('0+), *"(+()%, $(,&.(#+(!6( "#('0+), /(+()%, $(,&.%, $(,&+(!('0+), /(+()%, $(,&.%, $(,&+(!6('0+), - "." +"%% ? 6 G ?, $(,& 6(! 6(!6 6$6(! : 4&+0 #8!"3 6 * :%,(" 6(!,2( "#.'"(+2,"%,+"0) "0,+(! 6(!,2( "#.(+2,"%,+"0) "0,+(! 6(!6,2( "#.'"(+2,"%,+"0) "0,+(!6 6(!6,2( "#.(+2,"%,+"0) "0,+(!6 K + #8 * :%,(" B,(2," 6 !2," "") " Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT *5 /- + ):7),8; 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE *Note1 tRC CS tRCD RAS *Note 2 CAS ADDR Ra Ca0 Rb Cb0 BA A8 /A P Ra Rb WE DSF DQ M tOH DQ CL=2 Q a0 Q a1 Q a2 Q a3 Db0 Db1 Db2 Db3 tRAC *Note3 tSAC tO H Q a0 Qa1 Q a2 tSHZ Q a3 *Not e 4 tRDL CL = 3 Db0 Db1 Db2 Db3 tRAC *Not e 3 tSAC t S H Z *Note4 tRDL Row Active ( A- Ban k ) Read (A-Bank) Precharge ( A- Ban k ) Row Active ( A- B an k ) W rite (A- Ban k ) Precharge ( A- B an k ) :Don't Car e 1*+,2 (&%3%4*56768,+%,94,:34,;+*6*%<8,+,&+,4&'8*<,4'+*&( (*5<4,6='4>,6'&&+,443<+?349+*&'&76768,(@,&>+=ABC'8;*3+<3+;'+''C'8'?8,'D+,4*5(,&+,49 <4,6='4>,('9+C'8;*3+<3+588?, A$'D+,4D4*%+=,68*6E( (66,99+%,D4*%*5';;4,99(1F8'+,&67A!F .(3+<3+588?,A$'D+,4+=,,&;*D?349+( .GH! +388<'>,?+?349+ ?349+954'Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT , *5 /- + ):7),8; 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS tRC D RAS *Note 2 CAS ADDR Ra C a0 Cb0 Cc0 C d0 BA A8 /A P Ra tCDL WE *Note2 tRD L DSF *Note 1 *Note3 DQM DQ CL=2 Qa0 Qa1 Qb0 Qb1 Dc 0 Dc1 Dd0 D d1 CL = 3 Qa0 Qa1 Qb0 Dc0 Dc 1 Dd0 D d1 Row Active ( A- B an k ) R ea d (A-Bank) R ea d (A-Bank) W rite (A- Ban k ) W rite (A- Ban k ) Precharge ( A- Ban k ) :Don't Care F B 5 A 2," '(( +0, +), ,(' '. * $)' + (,' $, %,", 2," (' (#"' +) " 42%, $(,&2"",,)%2,""&('(("%). +0,42%, $(,&.2"+2," * $)' (! "#("' "%) '(( %, $(,& (' 2$ (,"& %, $(,& +0, ' 0 +), 9%)'(((0,42%, $(,& 2"+(!'",( Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT -(: /-3 ( ,! 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS *Note4 ADDR RAa CAa CAb RBa CBa CBb BA A8 /AP RAa RBa WE DSF *Note2 tBWC DQM *Note3 *Note1 DQ Pixel Mask Pixel Mask P ixe l Mask Pixel Mask Row Ac t i ve w i t h W rite-per- Bit Enable ( A- Ba nk ) Mas ked Block W rite ( A- Ban k ) Masked Block W rite with Auto Pr echarge (A-Bank) Row Active ( B- B an k ) Bl ock W r i t e w i t h Auto Pr echar ge ( B- Bank) Bl oc k W r i t e ( B- Ban k ) :Don't Car e FB5)(!<*"C5(!.*"C5B(!= 56 !8," " 6 !8,". ' $)'+"B:? :$,6(! (+( "#,%, $(,& 6 !8,"(,"&,' Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT )*-(:<(+ - 7),8; 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS *Not e1 A0- 2 RAa RBa CBa A3 ,4 ,7 , 8 RAa CAa RBa CBa A5 RAa CAa RBa CBa A6 RAa CAa RBa CBa A8/AP RAa RBa BA WE DSF DQM DQ Col or I/O Mask P ixe l Mask I/O Mask Col or DBa0 DBa1 DBa2 DBa3 Load Color Register Load M as k Register Row Active with W PB* Enable ( A -B an k ) Row Ac tive Load Color with W PB* Regist er En able Masked Masked W rite (B-Ban k) Bloc k W r ite with Aut o (A - B an k ) Pr ech arge Load M as k Regi st er (B-Bank) W P B * : W r i t e- P er- B i t :D on' t Care FB5$- !0% "(',&", ('.2 ('"%"+ Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT , */- 22) ):7),8; 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE *Note1 CS RAS *No te2 CAS ADDR RAa CAa RBb CBb CAc CBd CAe BA A8/AP RAa RBb WE DSF LOW DQM DQ CL=2 Q Aa 0 QAa1 QAa 2 QAa3 QBb0 QBb1 QBb 2 QBb 3 Q A c 0 QA c 1 QBd 0 QBd1 Q Ae 0 Q Ae 1 CL = 3 QAa 0 QAa1 Q Aa 2 Q Aa 3 QBb0 QBb 1 Q Bb 2 QBb 3 Q A c 0 QA c 1 QBd 0 QBd1 Q Ae 0 QAe 1 Row Active ( A- Ban k) Row Active ( B- Ban k) Read (A- Bank ) Read (B- Bank ) Read (A- Bank ) R ead (B- Ban k) Read (A- Ban k ) Precharge ( A- Ban k) :Don't Care FB5 (+'H (,2$ 4 . (' 8/ (,$"&$($ !$"&$&"&'& A",,)%(+),,('+,2%, $(,&.+$$,('('$%, $(,&+(!)+$( Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT , /- 22) ):7),8; 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS ADDR RAa Key CAa RBb CBb CAc CBd BA A8 /AP RAa RBb tCDL WE DSF DQM DQ M ask D Aa0 DAa1 D Aa2 D Aa3 DBb0 D Bb1 DBb2 DBb3 DAc 0 DAc 1 DAc 2 D Ac 3 DBd0 DBd1 DBd2 DBd3 Load Mas k Register Row Active with W rite-Per-Bit enable (A-Bank) Row Active ( B- Ban k) Masked W rite ( A- Bank ) W rite (B-Ban k) Masked W rite with aut o pr ec h ar g e ( A- Ban k ) W rite with auto P rech arge (B-Bank) :Don't Car e Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT *5 /- 22) ):7),8; 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS ADDR RAa CAa RBb CBb RAc CAc BA A8 /A P RAa RBb RAc tCDL WE *Note 1 DSF DQM DQ CL= 2 Q Aa0 QAa1 QAa2 QAa3 DBb0 DBb1 DBb2 DBb3 QAc0 QAc1 QAc2 CL= 3 QAa0 QAa1 QAa 2 QAa3 DBb0 DBb1 DBb2 DBb3 QAc0 QAc1 Row Act ive (A-B an k ) Read (A- Bank ) Precharge ( A- B an k ) Row Active ( B- Ban k ) W rite (B-Ban k) Row Act ive (A -Ban k ) Read (A - Ban k ) :Don' t Car e FB5 $)'+ %2," Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT *5 0 CLOCK /-3 ( ,7),8; 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS ADDR Ra Rb Ca Cb BA A8 /A P Ra Rb WE DSF DQM DQ CL= 2 Q a0 Q a1 Q a2 Q a3 Db0 Db1 Db2 Db3 CL=3 Q a0 Q a1 Q a2 Q a3 Db0 Db1 Db2 Db3 Row Active ( A-Ban k ) Read wit h A u t o P r ec h ar g e ( A- Bank ) Row Ac t i ve (B -Ban k) Au ot Pr ec h ar g e St ar t Poi n t ( A- Bank ) W ri te with Auto Pr echarge ( B- Bank) A u ot P r ec h ar g e Star t Poin t ( B- Bank ) :Don't Care FB5 $)'+ ,'"") +0,",(%, $(,&(, <9$ (06),&$C7.648'('6 !2,"= Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT *5 0 CLOCK /-3 ( ,7),8; 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS ADDR Ra Rb Ca Cb Ra Ca BA A8 /A P Ra Rb Ra WE DSF DQM DQ CL=2 Qa0 Qa1 Q b0 Q b1 Db2 Db3 Da0 Da1 DQ C L= 3 Qa0 Qa1 Q b0 Qb1 Db2 Db3 Da0 Da1 Row Active (A -B an k ) Read w it h Auto Precharge ( A- Bank) Row Act ive (B-B an k ) Read wit hout Aut o Pr eaharge( B- Bank ) AutoPreaharge Star t Poin t (A- Bank) Precharge ( B- B an k ) Row Ac tive (A-Bank ) W rite with Auto Preahar ge (A- Bank ) :Don't Care FB58$4('<8,"= ('2"$()%, $(,&"")'(6(!(0,('66(!( "#(" 904('<8,"= ('2"$)()%, $(,&"")'(66(!+0,6(!()%, $(,&(,.6(! ()%, $(,&2"(,($- 066(!,(' ('"%)%" ( (' (+")'(6(!'),"&!(0,6(!()%, $(,&(, Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT *5 0 CLOCK /-3 ( ,7),8; 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS ADDR Ra Ca Rb Cb BA A8 /A P Ra Rb WE DSF tRC D DQM DQ C L= 2 Q a0 Q a1 Q a2 Q a3 Db0 Db1 Db2 Db3 CL= 3 Q a0 Q a1 Q a2 Q a3 Db0 Db1 Db2 Db3 *Not e 1 Row Active ( A - B an k ) Read wit h Auto Pr echarge ( A- Bank) Read w it h A u ot P r ec h ar g e Au t o Pr ech ar g e St ar t Poi n t ( B- Bank ) ( A- Bank) Row Active ( B- Bank) Au ot Pr ec h ar g e St ar t Poi n t ( B- Bank) :Don't Care FB5 ('6(!"(2'"$"%,"' !"',"'0,(()%, $(,&(,%" Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS ADDR RAa CAa CAb BA *Not e 1 *Not e 1 A8 /A P RAa WE DSF DQM DQ CL= 2 *N ot e 2 1 Q Aa 0 Q A a 1 Q A a 2 Q A a 3 Q A a 4 1 DAb0 DAb1 DAb2 DAb3 DAb4 DAb5 CL=3 2 QAa0 QAa1 QAa2 QAa3 QAa4 2 DAb0 DAb1 DAb2 DAb3 DAb4 DAb5 Row Active ( A-Ban k ) Read ( A- Ba n k ) Burst Stop Read ( A- Ba n k ) Pr echar ge ( A- Ban k ) :Don't Care FB50)%(&'.+),"2(,%(,)'($'0+),()%, $(,&""%"+ +)$#("'*H(0,+),%.""(($ (0 4 ",,)% 6$ ((,"),('(+#""&'"(&,($(+.$ 6)(+),2,".6),%(' 4 ",,)%$)'+ %(,' (,0) 40,$""&'"(&,(0K )%(&2,"+),% L 6),%"#("'(0)%(&' Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CKE CS RAS CAS ADDR RAa CAa CAb BA *Note1 *Note1 A8 /AP RAa tBDL WE tRD L DSF *Note3 DQM *Note2 DQ DAa0 DAa1 DAa2 DAa3 DAa4 DAb0 DAb1 DAb2 DAb3 DAb4 DAb5 Row Active ( A- B an k ) W rite (A-Ban k) Burst Stop W rite (A-Bank) Precharge ( A- Ban k ) :Don't Care FB5 0)%(&'.+),"2(,%(,)'($'0+),()%, $(,&""%"+ *(("($ 0+),% (' (+2,""$ ,,%'"&, 9"'0"'+%(,(,0 P. Publication Date : Oct. 2001 Revision : 1.5 ESMT * ),-= /-7),8.1 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 *Not e 1 HIGH CKE CS RAS *Not e 2 CAS ADDR RAa CAa RB b CAb RAb CBc CAd BA A8 /A P RAa RB b RAc WE DSF DQM DQ C L= 2 QAa0 DAb0 DAb1 DBc 0 DAd0 DAd1 CL= 3 QAa0 DAb0 DAb1 DBc 0 DAd0 DAd1 Row Active ( A - B an k ) Row Ac ti ve ( B- Ban k) W rite (A- Ban k ) Row Active ( A- B an k ) Rea d (A - Ban k ) Precharge ( A- B an k ) R ea d w i t h Au t o Pr ec h ar g e ( A- Bank ) W r i t e wi t h Auto Pr echarge ( B- Bank) :Don't Care FB5 648'"(+'+"&EK"&$L(4<'4&",= $648'.$+),&$(2,""0"-'KL,&(,'0%,&,('+),&$ 8$6482," ('2"$()%, $(,&"- )'.!%"""'$( $)'+#"(' )%, $(,&"- )'($+),' ."$ (06482," (' A$- "((,$%, $(,& 8?60) ""(%"+(648' Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 -(:) ()5$( ()/-7 )/8.1),8; 15 16 17 18 19 CKE CS RAS CAS ADDR Ra Ca Cb Cc BA A8 /A P RA WE DSF *Note1 DQM DQ Q a0 Qa1 Q a2 Q a3 Q b0 Q b1 Dc0 Dc2 tSHZ Row Active Read Clock Suspension Read tSHZ W rite DQM Read DQ M W rite Clock Su s pen s i on :Don't Care FB5*''%,#+) " Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT 0 CLOCK *Not e 2 &< ,(3(3)(*7 )/8.1),8; 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 tSS CKE *Not e 1 tSS tSS tSS *Not e 3 CS RAS CAS ADDR Ra Ca BA A8 /AP Ra WE DSF DQM DQ Q a0 Q a1 Q a2 Pr ech ar ge Pow er - dow n Entry Pr ech ar ge Po w er - do w n E xi t Row Active Active Pow er - dow n Entr y Read Precharge A ct ive Pow er - dow n E xi t :Don't Care FB5+(!$)'+""'(%,",,"&%, $(,&%2,'2' /$)'+$"&$((K1L%,",42( "# (' (#"(""),0,$% "0" ("<= Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT -22)/5> /- 0 CLOCK *N ot e 2 *N ot e 4 *Not e 3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 tRCmi n tSS *N ot e 6 CKE *N ot e 1 tSS CS *Not e 5 RAS *N ot e 7 *N ot e 7 CAS ADDR BA A8 /A P WE DSF DQM DQ Hi-Z Hi-Z Sel f R ef r esh En tr y S e l f R e f r e s h E xi t Auto Ref r es h :Don't Care FB5A:/BA/4/ 4/ 4/:*/ . 4 7 2"$/$)'+2($( ! 0, ! .($"%)" )'"&$ ! (+'H (,- %0,/ A$'#" ,(""0,0,$'(&(/(K2L 0=: $'#" ,0,0,$'"") ",J)",'+0,-"0,0,0,$ A:/G9A/ 4/ 4/:*/ !,(,('+(++0,,),"&/$"&$ (,0,$"&$ "")",J)",'(0,/&"&$"&$ %0,0,$-" 0+),(),0,$",J)",'+0,0,0,$,('(0,0,0,$-" "0$)+),,0,$ Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT (*, /- 0 CLOCK 1 2 3 4 5 6 (2/- 0 1 2 3 4 5 6 7 8 9 10 HIGH CKE HIGH CS *N ot e 2 tRC RAS *Note 1 CAS *N ot e 3 ADDR Key Ra WE DSF DQM DQ Hi-Z Hi-Z MRS New Com man d Auto Ref res h New C om m an d :Don't Care F6$+(!%, $(,&$)'+ %''4&", ('(),0,$ :*/4/@9A/4/AQ/ FB5 . 4 . 7 8/ ( "#("('* 02($( ! 2"$('',!2"",(' ,&", "") ! $)'++0,2 4 ( "#(" ?(,0,'4&",(+ Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 ESMT ++ ++ ! " , / " 0 0, , , > 0 % .--/(- /)(- /7*-//- -+-,,- -//--- //-- /.-,77-- /---- /-,-,*--- ,*/-- ,*.-,7-- ,.--- ,.,--)(- -+-- -7(,)--1 -)(-1 - --+- > 0 6 ! " 0 % % -,. ,/--,- , --( -,-. -,,* / -7( ,----+* --,( " -// -/ -+ ---. ---7 --7 -/-7-) -7, -7/, 0 //7( //- /.( -*+ -*+* -*7, 0, ,77- /--- /-,-))7 -)** -)+( ,)7( ,*/- ,*.( -(.* -((, -((( , ,7- ,.-- ,.,--/) --, --* -)( -+-7( --)1 , ,)-1 --/)1 -)(2! - - ( --- --+ 0 6 % --.* ---/ --* --7 ---7 --, --,( --( ---+ -7-. -7, -7/ -*+ -*+* -*7, -))* -)** -)+* -(.* -((, -((( --/) --, --* --)1 --/)2! - ( --- Elite Semiconductor Memory Technology Inc. P. Publication Date : Oct. 2001 Revision : 1.5 |
Price & Availability of M32L32321SA-5Q
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