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| 2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 500 400 10 10(Pulse20) 4 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCE=12V, IE=-0.7A VCB=10V, f=1MHz 100max 100max 400min (Ta=25C) Ratings Unit A A 19.90.3 4.0 V V MHz pF 10 to 30 0.5max 1.3max 10typ 85typ V a b o3.20.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.6 IB2 (A) -1.2 ton (s) 1max tstg (s) 3max tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 2.0g a. Part No. b. Lot No. IC - VCE Characteristics (Typical) 10 1.2 A 1A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 1.4 (IC/I B= 5) I C - V BE Temperature Characteristics (Typical) 10 (VCE=4V) 8 Collector Current I C (A) 600 mA 8 1 Collector Current I C( A) 6 400mA 6 mp ) V B E( sat) emp se T -55C ) (Cas e Te mp) (Ca C se 4 200m A 4 Te 2 2 V C E( sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 100 10 j- a( C/W) hFE - IC Characteristics (Typical) t o n*t s tg *t f ( s) t on *t stg * tf - I C Characteristics (Typical) j-a - t Characteristics 3 DC Cur rent Gain h FE 50 125C 25C -55C VCC 200V IC:I B1: -I B 2= 10:1:2 1 0.5 tf 0.1 0.1 0.5 1 5 10 ton Transient Thermal Resistance 5 tstg Switching Ti me 1 10 0.5 5 0.02 0.05 0.1 0.5 1 5 10 0.3 1 10 Time t(ms) 25C 125 IB=100 mA (Ca 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 30 1m Reverse Bias Safe Operating Area 30 80 P c - T a Derating 10 s 0 10 Collecto r Curr ent I C( A) Collecto r Cur ren t I C( A) 5 10 5 Maxim um Power Dissi pation P C( W) s 60 W ith In fin ite he 40 at si nk 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1% Without Heatsink Natural Cooling 20 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 91 This datasheet has been download from: www..com Datasheets for electronics components. |
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